Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.

Electron Correlation in Metals

Abstract: Since the discovery of high Tc superconductivity, the role of electron correlation on superconductivity has been an important issue in condensed matter physics. Here the role of electron correlation in metals is explained in detail on the basis of the Fermi liquid theory. The book, originally published in 2004, discusses the following issues: enhancements of electronic specific heat and magnetic susceptibility, effects of electron correlation on transport phenomena such as electric resistivity and Hall coefficient, magnetism, Mott transition and unconventional superconductivity. These originate commonly from the Coulomb repulsion between electrons. In particular, superconductivity in strongly correlated electron systems is discussed with a unified point of view. This book is written to explain interesting physics in metals for undergraduate and graduate students and researchers in condensed matter physics.

Mott transition, antiferromagnetism, and unconventional superconductivity in layered organic superconductors

Abstract: The pressure vs temperature phase diagram of the layered organic superconducting family κ-(BEDT-TTF)2X is accurately determined by investigating the 1 H NMR and AC susceptibility properties of the anion substituted compound X=Cu[N(CN)2]Cl under helium gas pressure. A first order boundary between antiferromagnetism and superconductivity is established which is found to evolve into a first order metal–insulator transition line in the paramagnetic domain. This latter transition line is in turn ending in a critical point above which a mere crossover is retrieved. The whole phase diagram features a point-like region at which metallic, insulating, antiferromagnetic and unconventional superconducting phases all meet.

Parity-time symmetry-breaking mechanism of dynamic Mott transitions in dissipative systems

Abstract: We describe the critical behavior of the electric field-driven (dynamic) Mott insulator-to-metal transitions in dissipative Fermi and Bose systems in terms of non-Hermitian Hamiltonians invariant under simultaneous parity $(\mathcal{P})$ and time-reversal $(\mathcal{T})$ operations. The dynamic Mott transition is identified as a $\mathcal{PT}$ symmetry-breaking phase transition, with the Mott insulating state corresponding to the regime of unbroken $\mathcal{PT}$ symmetry with a real energy spectrum. We establish that the imaginary part of the Hamiltonian arises from the combined effects of the driving field and inherent dissipation. We derive the renormalization and collapse of the Mott gap at the dielectric breakdown and describe the resulting critical behavior of transport characteristics. The obtained critical exponent is in an excellent agreement with experimental findings.

Thermoelectric response in the incoherent transport region near Mott transition: The case study of La 1 − x Sr x VO 3

Abstract: We report a systematic investigation on the high-temperature thermoelectric response in a typical filling-control Mott transition system La${}_{1\ensuremath{-}x}$Sr${}_{x}$VO${}_{3}$. In the vicinity of the Mott transition, incoherent charge transport appears with increasing temperature and the thermopower undergoes two essential crossovers, asymptotically approaching the limit values expected from the entropy consideration, known as the Heikes formula. By comparison with the results of the dynamical mean-field theory, we show that the thermopower in the Mott critical state mainly measures the entropy per charge carrier that depends on electronic degrees of freedom available at the measurement temperature. Our findings verify that the Heikes formula is indeed applicable to the real correlated electron systems at practical temperatures ($Tg200$ K).

Topological Mott insulators of ultracold atomic mixtures induced by interactions in one-dimensional optical superlattices

Abstract: We present exactly solvable examples showing that topological Mott insulators can emerge from topologically trivial states due to strong interactions between atoms for atomic mixtures trapped in one-dimensional optical superlattice systems. The topological Mott insulating state is characterized by a nonzero Chern number and appears in the strongly interacting limit as long as the total band filling factor is an integer that is not sensitive to the filling of each component. The topological nature of the Mott phase can be revealed by observing the density profile of the trapped system. Our results can be also generalized to multicomponent atomic systems.