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Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: It is shown that, near the Mott insulating phase, the upper critical field Hc2 of the fulleride superconductors reaches values as high as ∼90 T—the highest among cubic crystals, suggesting that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-Tc and high-Hc2.
Abstract: Controlled access to the border of the Mott insulating state by variation of control parameters offers exotic electronic states such as anomalous and possibly high-transition-temperature (Tc) superconductivity. The alkali-doped fullerides show a transition from a Mott insulator to a superconductor for the first time in three-dimensional materials, but the impact of dimensionality and electron correlation on superconducting properties has remained unclear. Here we show that, near the Mott insulating phase, the upper critical field Hc2 of the fulleride superconductors reaches values as high as ∼90 T—the highest among cubic crystals. This is accompanied by a crossover from weak- to strong-coupling superconductivity and appears upon entering the metallic state with the dynamical Jahn–Teller effect as the Mott transition is approached. These results suggest that the cooperative interplay between molecular electronic structure and strong electron correlations plays a key role in realizing robust superconductivity with high-Tc and high-Hc2. Alkali-doped fullerides are superconductors but the impact of dimensionality and electron correlation remains unclear. Here, Kasaharaet al. report an upper critical field about 90 T, suggesting cooperative interplay between molecular electronic structure and strong electron correlations.
26 citations
04 Jan 2021
TL;DR: In this paper, it was shown that a high-quality tellurium single crystal undergoes a quantum phase transition at low temperatures from an Anderson insulator to a correlated disordered metal at around 17 kbar.
Abstract: Elemental tellurium is a small band-gap semiconductor, which is always p-doped due to the natural occurrence of vacancies. Its chiral non-centrosymmetric structure, characterized by helical chains arranged in a triangular lattice, and the presence of a spin-polarized Fermi surface, render tellurium a promising candidate for future applications. Here, we use a theoretical framework, appropriate for describing the corrections to conductivity from quantum interference effects, to show that a high-quality tellurium single crystal undergoes a quantum phase transition at low temperatures from an Anderson insulator to a correlated disordered metal at around 17 kbar. Such insulator-to-metal transition manifests itself in all measured physical quantities and their critical exponents are consistent with a scenario in which a pressure-induced Lifshitz transition shifts the Fermi level below the mobility edge, paving the way for a genuine Anderson-Mott transition. We conclude that previously puzzling quantum oscillation and transport measurements might be explained by a possible Anderson-Mott ground state and the observed phase transition. Elemental tellurium is a natural p-type semiconductor with a chiral structure and spin-polarized Fermi surface. Here, the authors show that the pressure-induced topological change of the Fermi surface at 17 kbar triggers an Anderson-Mott insulator-to-metal transition.
26 citations
TL;DR: It is shown that the relevant eigenvalue and eigenvector of the nonlocal Bethe-Salpeter kernel in the charge channel provide a unified picture of the hysteresis region and of the critical end point of the Mott transition on the DMFT's two-particle level.
Abstract: Strong repulsive interactions between electrons can lead to a Mott metal-insulator transition. The dynamical mean-field theory (DMFT) explains the critical end point and the hysteresis region usually in terms of single-particle concepts, such as the spectral function and the quasiparticle weight. In this Letter, we reconsider the critical end point of the metal-insulator transition on the DMFT's two-particle level. We show that the relevant eigenvalue and eigenvector of the nonlocal Bethe-Salpeter kernel in the charge channel provide a unified picture of the hysteresis region and of the critical end point of the Mott transition. In particular, they simultaneously explain the thermodynamics of the hysteresis region and the iterative stability of the DMFT equations. This analysis paves the way for a deeper understanding of phase transitions in correlated materials.
25 citations
TL;DR: In this article, the relativistic calculation of the transition matrix element and differential cross sections for Mott scattering of initially polarized Dirac particles (electrons) in the presence of a strong laser field with linear polarization are presented.
Abstract: We present analytical and numerical results of the relativistic calculation of the transition matrix element ${S}_{fi}$ and differential cross sections for Mott scattering of initially polarized Dirac particles (electrons) in the presence of a strong laser field with linear polarization. We use exact Dirac-Volkov wave functions to describe the dressed electrons and the collision process is treated in the first Born approximation. The influence of the laser field on the degree of polarization of the scattered electron is reported.
25 citations
TL;DR: In this article, the origin of the excitonic luminescence in quantum wells was investigated by time-resolved photoluminescence experiments performed on a very high-quality InGaAs quantum well sample in which the photoluminance contributions at the energy of the trion and at the band edge can be clearly separated and traced over a broad range of times and densities.
25 citations