Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this article, an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3 was studied, where the oxide was electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to bias polarity.
Abstract: We studied an electron-induced metal-insulator transition in a two-terminal device based on oxide NdNiO3. In our device, the NdNiO3 is electrostatically doped by the voltage applied between the terminals, resulting in an asymmetric conductivity with respect to the bias polarity. The asymmetry is temperature-dependent and is most significant near the metal-insulator transition. The I-V characteristics exhibit a strong dependence both on the thermal history and the history of the applied voltage bias. Our two-terminal device represents a simple and efficient route for studies of the effect of electron doping on the metal-insulator transition.
17 citations
TL;DR: In this article, the Green's function was used to study the excitonic Mott transition in single and double quantum wells using the Green function technique, and an abrupt jump in the value of the ionization degree, which happens with an increase of the carrier density or temperature, was found in a certain density-temperature region.
17 citations
TL;DR: In this paper, three topics related to correlated electrons in coupled quantum dots are discussed, including electron tunneling through a Hubbard gap induced by an increase in the density of electrons in a quantum-dot chain under an overall confining potential.
Abstract: Three topics related to correlated electrons in coupled quantum dots are discussed. The first is quasi-resonance between multi-electron states, which causes hitherto unremarked types of resonant absorption in coupled quantum dots. The second is electron tunneling through a Hubbard gap, which is induced by an increase in the density of electrons in a quantum-dot chain under an overall confining potential. The third is Mott transition in a two-dimensional quantum-dot array induced by an external electric field. In this system, the metal-insulator transition goes through a heavy electron phase in which the density of correlated electrons fluctuates.
17 citations
TL;DR: An additional, quantum, particle interacting with a Bose condensate forms self-trapped «polaron» if the interaction is sufficiently strong.
Abstract: An additional, quantum, particle interacting with a Bose condensate forms self-trapped «polaron» if the interaction is sufficiently strong. This is contrasted with the case where the additional particle is identical with those in the condensate, where the «self-trapping» would be interpreted as a consequence of a Mott transition. There the transition to the self-trapped state, if it exists, is abrupt, unlike the impurity case. An external potential enhances self-trapping in the nonidentical case
17 citations
TL;DR: In this article, the 4s band becomes degenerate with the 3d band at VO and thus helps to destroy the Mott transition, which is well accounted for by the large difference in lattice constant between the metallic and insulating oxides.
Abstract: Electronic band structure calculations for TiO, VO, MnO, FeO, CoO, and NiO suggest that the 4s band becomes degenerate with the 3d band at VO and thus helps to destroy the Mott insulator state. The large difference in lattice constant between the metallic and insulating oxides is well accounted for in terms of the Mott transition. Calculated values of the crystal field splitting 10 Dq are about 70% of experimental ones.
17 citations