Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this article, a semiconductor-metal transition in the electrical resistance of NiS 2, which has been suggested to be a Mott transition, is observed with decreasing temperature under pressure up to 44 kbar.
16 citations
TL;DR: In this paper, a holographic construction of the large-N Bose-Hubbard model is presented, which is based on Maxwell fields coupled to charged scalar fields on the AdS2 hard wall.
Abstract: We present a holographic construction of the large-N Bose-Hubbard model. The model is based on Maxwell fields coupled to charged scalar fields on the AdS2 hard wall. We realize the lobe-shaped phase structure of the Bose-Hubbard model and find that the model admits Mott insulator ground states in the limit of large Coulomb repulsion. In the Mott insulator phases, the bosons are localized on each site. At zero hopping we find that the transitions between Mott insulating phases with different fillings correspond to first order level-crossing phase transitions. At finite hopping we find a holographic phase transition between the Mott phase and a non-homogeneous phase. We then analyze the perturbations of fields around both the Mott insulator phase and inhomogeneous phase. We find almost zero modes in the non-homogeneous phase.
16 citations
TL;DR: A method to probe states in the Mott insulator regime produced from a condensate in an optical lattice is proposed and it is shown that one can potentially observe a deviation from a pure Mott state.
Abstract: We propose a method to probe states in the Mott insulator regime produced from a condensate in an optical lattice. We consider a system in which we create time-dependent number fluctuations in a given site by turning off the atomic interactions and lowering the potential barriers on a nearly pure Mott state to allow the atoms to tunnel between sites. We calculate the expected interference pattern and number fluctuations from such a system and show that one can potentially observe a deviation from a pure Mott state. We also discuss a method in which to detect these number fluctuations using time-of-flight imaging.
16 citations
TL;DR: The transition between free excitons and an electron-hole plasma was described for the first time by a theory based on full random-phase-approximation (RPA) screening in the plasma as discussed by the authors.
Abstract: The transition between free excitons and an electron-hole plasma is described for the first time by a theory based on full random-phase-approximation (RPA) screening in the plasma. The onset of exciton binding predicted is in excellent agreement with experimental data attributed to exciton dissociation in Si. It is suggested that the many-body electron-hole interaction may be well described by static RPA screening near the Mott transition.
16 citations
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TL;DR: In this paper, the authors present the phase diagram of clusters made of two, three and four coupled Anderson impurities, and discuss how these crossover regions of the impurity models might affect the approach to the Mott transition within a cluster extension of dynamical mean field theory.
Abstract: We present the phase diagram of clusters made of two, three and four coupled Anderson impurities. All three clusters share qualitatively similar phase diagrams that include Kondo screened and unscreened regimes separated by almost critical crossover regions reflecting the proximity to barely avoided critical points. This suggests the emergence of universal paradigms that apply to clusters of arbitrary size. We discuss how these crossover regions of the impurity models might affect the approach to the Mott transition within a cluster extension of dynamical mean field theory.
16 citations