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Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.


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TL;DR: In this article, a dynamical layer theory was proposed to estimate the charge redistribution at the final step from minimization of a function of the layer fillings, in the spirit of Thomas-Fermi theory.
Abstract: The p-n junction has provided the basis for the semiconductor-device industry. Investigations of p-n junctions based on Mott insulators is still in its infancy. Layered Mott insulators, such as the cuprates or other transition metal-oxides, present a special challenge since strong in-plane correlations are important. Here we model the planes carefully using plaquette Cellular Dynamical Mean Field Theory with an exact diagonalization solver. The energy associated with inter-plane hopping is neglected compared with the long-range Coulomb interaction that we treat in the Hartree-Fock approximation. Within this new approach, "Dynamical Layer Theory", the charge redistribution is obtained at the final step from minimization of a function of the layer fillings. A simple analytical description of the solution, in the spirit of Thomas-Fermi theory, reproduces quite accurately the numerical results. Various interesting charge reconstructions can be obtained by varying the Fermi energy differences between both sides of the junction. One can even obtain quasi-two dimensional charge carriers at the interface, in the middle of a Mott insulating layer. The density of states as a function of position does not follow the simple band bending picture of semiconductors.

16 citations

Journal ArticleDOI
G. Travaglini1, P. Wachter1
TL;DR: In this article, the authors derived the red bronze structure from the one of the blue bronze and explained the metal semiconductor transition between K0.3MoO3 and K 0.33MoOO3 with a formal Mott transition.

16 citations

Journal ArticleDOI
TL;DR: In this article, the authors studied the continuous bandwidth-controlled Mott transition in the two-dimensional single-band Hubbard model with a focus on the critical scaling behavior of charge and spin degrees offreedom.
Abstract: Department of Physics, Columbia University, New York, NY 10027, USA(Dated: August 3, 2011)We study the continuous bandwidth-controlled Mott transition in the two-dimensional single-band Hubbard model with a focus on the critical scaling behavior of charge and spin degrees offreedom. Using plaquette cluster dynamical mean-field theory, we find charge and spin criticalityconsistent with experimental results for organic conductors. In particular, the charge degree offreedom measured via the local density of states at the Fermi level shows a smoother transition thanexpected for the Ising universality class and in single-site dynamical mean-field theory, revealingthe importance of short-ranged nonlocal correlations in two spatial dimensions. The spin criticalitymeasured via the local spin susceptibility agrees quantitatively with nuclear magnetic resonancemeasurements of the spin-lattice relaxation rate.

16 citations

Journal ArticleDOI
TL;DR: In this paper, the Mott transition in the anisotropic kagome lattice Hubbard model was investigated using the cellular dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations.
Abstract: We investigate the Mott transition in the anisotropic kagome lattice Hubbard model using the cellular dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations. By calculating the double occupancy and the density of states, we determine the interaction strength of the first-order Mott transition and show that it becomes small as the anisotropy increases. We also calculate the spin-correlation functions and the single-particle spectrum, and reveal that the quasiparticle and magnetic properties change dramatically around the Mott transition; the spin correlations are strongly enhanced and the quasiparticle bands are deformed. We conclude that such dramatic changes are due to the enhancement of anisotropy associated with the relaxation of frustration around the Mott transition.

16 citations

Journal ArticleDOI
TL;DR: In this article, the ground state properties of spin-1 bosons trapped in a square optical lattice were studied using quantum Monte Carlo simulations, and the phase diagram was characterized by the mobility of the particles (Mott insulating or superfluid phase).
Abstract: We study, using quantum Monte Carlo (QMC) simulations, the ground state properties of spin-1 bosons trapped in a square optical lattice. The phase diagram is characterized by the mobility of the particles (Mott insulating or superfluid phase) and by their magnetic properties. For ferromagnetic on-site interactions, the whole phase diagram is ferromagnetic and the Mott insulators-superfluid phase transitions are second order. For antiferromagnetic on-site interactions, spin nematic order is found in the odd Mott lobes and in the superfluid phase. Furthermore, the superfluid-insulator phase transition is first or second order depending on whether the density in the Mott is even or odd. Inside the even Mott lobes we observe a singlet-to-nematic transition for certain values of the interactions. This transition appears to be first order.

16 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202334
202271
202165
202064
201968
201871