Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.

Field effect transistor and manufacturing method thereof

Abstract: The Mott transistor capable of operating at a room temperature can be realized by using a self-organized nanoparticle array for the channel portion The nanoparticle used in the present invention comprises metal and organic molecules, and the size thereof is extremely small, that is, about a few nm Therefore, the charging energy is sufficiently larger than the thermal energy kBT=26 meV, and the transistor can operate at a room temperature Also, since the nanoparticles with a diameter of a few nm are arranged in a self-organized manner and the Mott transition can be caused by the change of a number of electrons of the surface density of about 1012 cm−2, the transistor can operate by the gate voltage of about several V

Vortex pinning and the non-Hermitian Mott transition

Abstract: The boson Hubbard model has been extensively studied as a model of the zero temperature superfluid/insulator transition in Helium-4 on periodic substrates. It can also serve as a model for vortex lines in superconductors with a magnetic field parallel to a periodic array of columnar pins, due to a formal analogy between the vortex lines and the statistical mechanics of quantum bosons. When the magnetic field has a component perpendicular to the pins, this analogy yields a non-Hermitian boson Hubbard model. At integer filling, we find that for small transverse fields, the insulating phase is preserved, and the transverse field is exponentially screened away from the boundaries of the superconductor. At larger transverse fields, a ``superfluid'' phase of tilted, entangled vortices appears. The universality class of the transition is found to be that of vortex lines entering the Meissner phase at H_{c1}, with the additional feature that the direction of the tilted vortices at the transition bears a non-trivial relationship to the direction of the applied magnetic field. The properties of the Mott Insulator and flux liquid phases with tilt are also discussed.

Interference of atomic levels and superfluid-Mott insulator phase transitions in a two-component Bose-Einstein condensate.

Abstract: The superfluid-Mott insulator phase transition in a Bose-Einstein condensate of neutral atoms with doubly degenerate internal ground states in an optical lattice is theoretically investigated. The optical lattice is created by two counterpropagating linearly polarized laser beams with the angle theta between the polarization vectors (lin-angle-lin configuration). The phase diagram of the system and the critical values of the parameters are worked out. It is shown that the sign of the detuning plays an important role and that there is a strong suppression of the Mott transition in the case of blue detuning. Varying the laser intensity and/or the angle theta one can manipulate the Mott insulator to superfluid quantum phase transition as well as prepare the condensate in physically distinguishable "ferromagnetic" and "antiferromagnetic" superfluid states.

Effect of Doublon-Holon Binding on Mott transition---Variational Monte Carlo Study of Two-Dimensional Bose Hubbard Models

Abstract: To understand the mechanism of Mott transitions in case of no magnetic influence, superfluid-insulator (Mott) transitions in the S=0 Bose Hubbard model at unit filling are studied on the square and triangular lattices, using a variational Monte Carlo method. In trial many-body wave functions, we introduce various types of attractive correlation factors between a doubly-occupied site (doublon, D) and an empty site (holon, H), which play a central role for Mott transitions, in addition to the onsite repulsive (Gutzwiller) factor. By optimizing distance-dependent parameters, we study various properties of this type of wave functions. With a hint from the Mott transition arising in a completely D-H bound state, we propose an improved picture of Mott transitions, by introducing two characteristic length scales, the D-H binding length $\xi_{\rm dh}$ and the minimum D-D exclusion length $\xi_{\rm dd}$. Generally, a Mott transition occurs when $\xi_{\rm dh}$ becomes comparable to $\xi_{\rm dd}$. In the conductive (superfluid) state, domains of D-H pairs overlap with each other ($\xi_{\rm dh}>\xi_{\rm dd}$); thereby D and H can propagate independently as density carriers by successively exchanging the partners. In contrast, intersite repulsive Jastrow (D-D and H-H) factors have little importance for the Mott transition.