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Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this paper, the authors investigated the Mott transition in a Si0.93Ge0.07/Si thin quantum well using low-temperature photoluminescence, and demonstrated that this transition is smooth and occurs in the concentration range from approximately 6 × 1010 to 1.2 × 1012 cm−2.
Abstract: The “exciton gas-plasma” transition (the Mott transition) in a Si0.93Ge0.07/Si thin quantum well is investigated using low-temperature photoluminescence. It is demonstrated that this transition is smooth and occurs in the concentration range from approximately 6 × 1010 to 1.2 × 1012 cm−2. At a temperature of 23 K and excitation densities of higher than 10 W/cm2, the shape and location of the luminescence line associated with the electron-hole plasma remain unchanged with an increase in the pump density. This can indicate the occurrence of an “electron-hole gas-liquid” transition. It is shown that, in the spectrum of the quantum well, the luminescence of boron-bound excitons dominates at liquid-helium temperatures and low excitation densities, whereas the free-exciton luminescence dominates at temperatures above 10 K. The influence of the homogeneous and inhomogeneous broadening on the electron-hole plasma and exciton luminescence is discussed.
13 citations
TL;DR: In this paper, a variety of anomalous metal states near the Mott transition and their possible application as new electronic materials are argued taking an example of the filling-controlled Mn oxide compounds.
Abstract: Barely metallic states with novel electronic structures and properties can be realized by control of the band filling in 3d transition metal oxide compounds with strong electron correlation. Recent experimental investigations on the (doping-induced) Mott transition in perovskite Ti oxides are reviewed in comparison with the Ml transition in the HTSC Cu oxides. A variety of anomalous metal states near the Mott transition and their possible application as new electronic materials are argued taking an example of the filling-controlled Mn oxide compounds.
13 citations
TL;DR: Pb-GaAs Schottky barriers irradiated progressively by 10-MeV electrons or fast neutrons were found to exhibit anomalous behavior identical to that produced by varying the initial doping as mentioned in this paper.
Abstract: Pb-GaAs Schottky barriers irradiated progressively by 10-MeV electrons or fast neutrons were found to exhibit anomalous behavior identical to that produced by varying the initial doping. The results are consistent with the Hubbard model of the Mott transition.
12 citations
12 citations
12 citations