Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.

Estimate of the phase transition line in the infinite-dimensional Hubbard model

Abstract: We consider a Mott transition of the Hubbard model in infinite dimensions. The dynamical meanfield theory is employed in combination with a continuous-time quantum Monte Carlo (CTQMC) method for an accurate description at low temperatures. From the double occupancy and the energy density, which are directly measured from the CTQMC method, we construct the phase diagram. We pay particular attention to the construction of the first-order phase transition line (PTL) in the coexistence region of metallic and insulating phases. The resulting PTL is found to exhibit reasonable agreement with earlier finite-temperature results. We also show by a systematic inclusion of low-temperature data that the PTL, which is achieved independently of the previous zero-temperature results, approaches monotonically the transition point from earlier zerotemperature studies.

Josephson physics mediated by the Mott insulating phase

Abstract: We investigate the static and dynamic properties of bosonic lattice systems in which condensed and Mott insulating phases coexist due to the presence of a spatially varying potential. We formulate a description of these inhomogeneous systems and calculate the bulk energy at and near equilibrium. We derive the explicit form of the Josephson coupling between disjoint superfluid regions separated by Mott insulating regions. We obtain detailed estimates for the case of alternating superfluid and Mott insulating spherical shells in a radially symmetric parabolically confined cold atom system.

Magnetic-field induced crossover from Efros-Shklovskii to Mott variable range hopping in Si:(P, B)

Abstract: A crossover from Efros-Shklovskii to Mott variable range hopping (VRH) has been observed in the electrical conductivity upon applying a high magnetic field B > 15 T on insulating compensated Si:(P,B). as has been found before in Ge:As. This crossover is deduced from the change of the exponent s of the temperature dependence of the VRH conductivity. The crossover field (in the range between 10 and 20 T) increases systematically with decreasing carrier concentration.

Spectral properties near the Mott transition in the two-dimensional t-J model with next-nearest-neighbor hopping

Abstract: The single-particle spectral properties of the two-dimensional t - J model with next-nearest-neighbor hopping are investigated near the Mott transition by using cluster perturbation theory. The spectral features are interpreted by considering the effects of the next-nearest-neighbor hopping on the shift of the spectral-weight distribution of the two-dimensional t - J model. Various anomalous features observed in hole-doped and electron-doped high-temperature cuprate superconductors are collectively explained in the two-dimensional t - J model with next-nearest-neighbor hopping near the Mott transition.