Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this paper, the Seebeck coefficient is measured as a function of both temperature and pressure at the Mott insulator-metal transition and the power factor is estimated by a combination of their data with resistivity data.
Abstract: We have measured the Seebeck coefficient, S, of nominally 1.1% Cr doped V2O3 as a function of both temperature and pressure. Large variations of S are found at the Mott insulator-metal transition. A combination of our data with resistivity data allows us to estimate the power factor. Contrary to thermopower and resistivity, the power factor is not strongly modified upon crossing the first order phase transition. Such a behavior is in sharp contrast with standard semiconductors.
5 citations
TL;DR: In this article, the authors carried out series of X-ray diffraction (XRD) measurements up to 120 GPa using diamond anvil cells (DACs) to probe structural features specifically related to pressure-induced (PI) magnetic/electronic phenomena in transition metal compounds.
Abstract: Structural aspects of magnetic/electronic transitions in strongly correlated systems in a regime of very high static density are the main issues of this article. To achieve this objective, we have carried out series of X-ray diffraction (XRD) measurements up to 120 GPa using diamond anvil cells (DACs) to probe structural features specifically related to pressure-induced (PI) magnetic/electronic phenomena in transition metal (TM) compounds. The types of phenomena are the Mott transition (MT), high-spin (HS) to low-spin (LS) transition, valence transformations, the quenching of the orbital term, and Verwey transition. In all these cases, the electronic transition may induce or be a consequence of structural alterations. These studies provide essential information concerning: (i) structural alterations attributed to the valence transformation in some TM compounds; (ii) mechanisms and precursors responsible for the PI MT; features of the structural transformation specifically attributed to the MT for differen...
5 citations
01 Jan 2002
TL;DR: In this paper, it was shown that the surface phase diagram of the Mott transition should have the same topology as the phase diagram for magnetic order at surfaces: the corresponding linearized mean field descriptions, a simplified dynamical mean field theory of the Hubbard model and the Weiss mean-field theory for the Ising model, are formally equivalent.
Abstract: Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram should be expected to have the same topology as the phase diagram for magnetic order at surfaces: The corresponding linearized mean-field descriptions, a simplified dynamical mean-field theory of the Hubbard model and the Weiss mean-field theory for the Ising model, are found to be formally equivalent. A new kind of surface state appears in the low-energy part of the one-particle excitation spectrum as a precursor effect of the Mott transition.
5 citations
TL;DR: In this paper, the authors measured electrical resistivity, Hall coefficient, thermoelectric power, and magnetization for charge-density wave (CDW) material 1T-TaS2 single crystals grown by varying the excess sulfur content xes.
Abstract: We have measured electrical resistivity, Hall coefficient, thermoelectric power, and magnetization for charge-density wave (CDW) material 1T-TaS2 single crystals grown by varying the excess sulfur content xes. We have revealed that a small mid-gap state is formed inside the Mott gap and that anomalous low temperature transport is not governed by the Mott gap state itself but by the mid-gap state. The electric properties of the mid-gap state are modified by increasing xes (or hole doping), and we have found the insulator-metal transition occurs by hole doping below 60 K.
5 citations
TL;DR: In this paper, the static charge response for the Hubbard model was investigated using the Slave-Boson method in the saddle-point approximation, and it was shown that RPA works quite well close to half-filling, breaking down close to the Mott transition.
Abstract: We investigate the static charge response for the Hubbard model. Using the Slave-Boson method in the saddle-point approximation we calculate the charge susceptibility. We find that RPA works quite well close to half-filling, breaking, of course, down close to the Mott transition. Away from half filling RPA is much less reliable: Already for very small values of the Hubbard interaction U, the linear response becomes much more efficient than RPA, eventually leading to overscreening already beyond quite moderate values of U. To understand this behavior we give a simple argument, which implies that the response to an external perturbation at large U should actually be strongly non-linear. This prediction is confirmed by the results of exact diagonalization.
5 citations