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Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: The theory of the conductivity for strongly disordered systems is applied to the Anderson model in this article, and it is shown that the metal-insulator transition occurs at the reasonable value of the strength of disorder.
Abstract: The theory of the conductivity for strongly disordered systems [J. Phys. Soc. Jpn. 54 (1985) 736] is applied to the Anderson model. It is shown that the metal-insulator transition occurs at the reasonable value of the strength of disorder.
4 citations
TL;DR: In this paper, the Mott transition in a two-dimensional lattice spinless fermion model with nearest neighbors density-density interactions was studied, and the model is mapped onto the lattice XXZ spin model, which is shown to possess a quantum group symmetry as a consequence of a recently found solution of the Zamolodchikov tetrahedron equation.
4 citations
Journal Article•
4 citations
TL;DR: In this article, the effect of extrinsic compensation and impurity concentration on the virtual Anderson transition was investigated and it was shown that an increase of compensation initially does not affect the Anderson transition, however at strong compensations the transition is suppressed due to increase of disorder.
Abstract: Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells. We attributed it to Anderson delocalization of electronic states in the vicinity of the maximum of the narrow impurity band. A possibility of such delocalization at relatively small impurity concentration is related to the small width of the impurity band characterized by weak disorder. In this case the carriers were activated from the "bandtail" while its presence was related to weak background compensation. Here we study an effect of the extrinsic compensation and of the impurity concentration on this "virtual" Anderson transition. It was shown that an increase of compensation initially does not affect the Anderson transition, however at strong compensations the transition is suppressed due to increase of disorder. In its turn, an increase of the dopant concentration initially leads to a suppression of the transition due an increase of disorder, the latter resulting from a partial overlap of the Hubbard bands. However at larger concentration the conductivity becomes to be metallic due to Mott transition.
4 citations
TL;DR: In this article, the authors argue that these effects are due to negative pressure (about -2.5kbar at 100?K) caused by the large difference in the thermal expansion coefficients of SiO2 and kappa-(BEDT-TTF)2Cu(SCN)2.
Abstract: Thick (100-130 mu m) crystals of kappa-(BEDT-TTF)2Cu(SCN)2 show maximum of p(T) dependence at 100K (2.52.8 times larger than their resistivity at 298K) and reproducible Tc (onset) at 10.4K. Thin (25 mu m) crystals attached to a SiO2 wafer demonstrated profound enhancement of peak resistivity near 100K (up to 3000 times greater than their room temperature resistivity). Further, superconductivity is absent in the thin films. We argue that these effects are due to negative pressure (about -2.5kbar at 100?K) caused by the large difference in the thermal expansion coefficients of SiO2 and kappa-(BEDT-TTF)2Cu(SCN)2. Thin single crystal on Au patterned Si/SiO2 wafer.
4 citations