Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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IBM1
TL;DR: In this paper, the potential for a perovskite oxide capable of undergoing the Mott metal-insulator transition as the channel material was investigated, and the potential of perovskiite oxide to be used as a channel transistor was investigated.
Abstract: We have been investigating the potential for a channel transistor which utilizes a perovskite oxide capable of undergoing the Mott metal-insulator transition as the channel material. Our experiments have identified three limitations to the performance of the oxide devices: contact resistance to the channel, mobility limitations due to polycrystalline channels, and inadequate field induced surface charge density. In this paper we review progress we have made in oxide electrodes and in improving channel growth conditions which have mitigated the limitations due to contact resistance and polycrystalline channels. We conclude with an outline of our approach to improving the field induced surface charge density.
2 citations
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TL;DR: In this article, a consistent theory of the microscopic delocalization phenomenon in plasmas (the so-called Mott transition) and the Debye-Huckel nonideality correction to the thermodynamical functions in the chemical picture of a plasma is presented.
2 citations
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TL;DR: In this paper, the stable ground state of the one-dimensional strongly correlated electron system with electron-lattice interaction in which one electron is doped from half-filling was investigated.
Abstract: One-dimensional strongly correlated electron system, which is accompanied by interaction with the lattice, has attracted a great deal of interest in both experimental and theoretical studies. At half-filling, this system is a Mott insulator when the electron–lattice interaction is weak. We performed a theoretical investigation of the stable ground state of the one-dimensional strongly correlated electron system with electron–lattice interaction in which one electron is doped from half-filling. We used an extended Peierls–Hubbard model. We report here that, contrary to “common sense” suppositions about the one-dimensional electron–lattice system, a polaron solution appears under conditions of comparatively strong electron–lattice interaction in the Mott phase and that the polaron delocalizes under conditions of weak electron–lattice interaction. These two states are separated by the strength of the electron–lattice interaction.
2 citations
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14 Dec 2012TL;DR: In this article, a perturbative approach combined with the dynamical mean-field theory for investigating the Mott transition in repulsively interacting three-component fermionic atoms in optical lattices is presented.
Abstract: We develop a perturbative approach combined with the dynamical mean-field theory for investigating the Mott transition in repulsively interacting three-component fermionic atoms in optical lattices. We show that this method captures the essentials of the correlation effects and describes well the crossover between the Fermi liquid and the paired Mott insulator.
2 citations
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TL;DR: In this paper, the electron Green's function of the two-dimensional Hubbard model, derived using the strong coupling diagram technique, is self-consistently solved for different electron concentrations $n$ and tight-binding dispersions.
Abstract: Equations for the electron Green's function of the two-dimensional Hubbard model, derived using the strong coupling diagram technique, are self-consistently solved for different electron concentrations $n$ and tight-binding dispersions. Comparison of spectral functions calculated for the ratio of Hubbard repulsion to the nearest neighbor hopping $U/t=8$ with Monte Carlo data shows not only qualitative, but in some cases quantitative agreement in position of maxima. General spectral shapes, their evolution with momentum and filling in the wide range $0.7\lesssim n\leq 1$ are also similar. At half-filling and for the next nearest neighbor hopping constant $t'=-0.3t$ the Mott transition occurs at $U_c\approx 7\Delta/8$, where $\Delta$ is the initial bandwidth. This value is close to those obtained in the cases of the semi-elliptical density of states and for $t'=0$. In the case $U=8t$ and $t'=-0.3t$ the Mott gap reaches maximum width at $n=1.04$, and it is larger than that at $t'=0$ for half-filling. In all considered cases positions of spectral maxima are close to those in the Hubbard-I approximation.
2 citations