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Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this paper, the effects of longitudinal and transverse Hund coupling terms on the Mott transition of two-orbital Hubbard models are studied by the rotationally invariant slave boson approach.
2 citations
TL;DR: In this paper, a two-band Hubbard model with both repulsion U and attraction U was used to study the optical properties of three-dimensional electron-hole systems and showed that an excitonic peak structure appears due to an exciton in the sea of correlated fermions when U is larger than a certain critical value.
2 citations
TL;DR: In this article, the authors examined the change in the nearest-neighbor dynamical correlations of doublon and holon in the time domain with varying the Coulomb repulsion near the Mott transition.
2 citations
TL;DR: In this paper, the authors extended the mean field treatment of the superfluid-Mott insulator (SF-MI) transition in the BH model to the case of strongly interacting bosons with attached U(1) gauge group flux tubes.
Abstract: The physics of the Bose-Hubbard (BH) model is the subject of intensive studies in recent years, since it has been realized that BH Hamiltonian can be applied to systems of cold atoms confined in periodic optical lattice potential, where the effects on interactions are strongly enhanced. Our aim is to extend the widely used mean-field treatment of the superfluid-Mott insulator (SF-MI) transition in the BH model. Our method also improves the strong-coupling expansion that works well only for sufficiently large insulating gap. The key point of the approach is to consider the representation of strongly interacting bosons as particles with attached U(1) gauge group flux tubes, which constitutes the quantum rotor description. The effective action formalism allows us to cast the problem in terms of the phase-only action and obtain an analytical formulas for critical lines. Finally, we calculate the zero-temperature SF-MI phase diagrams for three-dimensional BH model and compare our results with the outcome of numerical Monte Carlo simulations. We found a very good agreement for the quantitative results regarding the details of the lobe in the phase diagrams showing the quantum transition from superfluid to the Mott insulating phase.
2 citations
TL;DR: In this paper, an Iterative Solution of Boltzmann equation (ISBE) based on the usual scattering mechanisms was used to analyze the electron transport in relaxed InxGa1-x As grown on GaAs by MBE and doped with Si to a carrier density of approximately 1016cm-3.
Abstract: Electron transport in relaxed InxGa1-x As grown on GaAs by MBE and doped with Si to a carrier density of approximately 1016cm-3 has been investigated as a function of temperature (4.2 - 300K) and pressure (0-8 kbar) for a wide range alloy compositions. A dramatic decrease in both the mobility and carrier concentration in a limited alloy composition range, x=0.30-0.60, has been observed. The results, analyzed using an Iterative Solution of Boltzmann equation (ISBE) based on the usual scattering mechanisms, indicate that in general very good agreement can be obtained at high temperatures for the alloy compositions where the electron scattering from deep centres is unimportant. Both the measured temperature and pressure dependence of mobility and carrier concentration together with the ISBE calculations indicate that the deep levels are responsible for the sharp decrease both in the mobility and carrier concentration in the alloy composition range, x=0.30-0.60. For the x=0.51 and 0.60 layers an additional scattering mechanism having temperature dependence ~T2.6 has been observed, which is attributed to electron scattering from the deep levels generated in association with layer relaxation. The resistivity analysis at low temperatures shows that the Mott transition occurs in the limited alloy composition range x=0.30-0.50 at these doping densities. The temperature and pressure dependence of the low temperature resistivity can be well described in terms of the thermally-activated hopping conduction law for alloy compositions x0.72.
2 citations