Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this article, the authors present an algorithm for the computation of unbiased Green functions and self-energies for quantum lattice models, free from systematic errors and valid in the thermodynamic limit.
Abstract: We present an algorithm for the computation of unbiased Green functions and self-energies for quantum lattice models, free from systematic errors and valid in the thermodynamic limit. The method combines direct lattice simulations using the Blankenbecler Scalapino-Sugar quantum Monte Carlo (BSS-QMC) approach with controlled multigrid extrapolation techniques. We show that the half-filled Hubbard model is insulating at low temperatures even in the weak-coupling regime; the previously claimed Mott transition at intermediate coupling does not exist.
1 citations
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TL;DR: In this article, the authors studied the metal-insulator transition induced by strong defect-phonon-carrier and electron-photon interactions in doped compounds and formulated a strong localization limit of the MIT problem by applying the continuum theories of extrinsic and phonon-assisted self-trapping of carriers.
Abstract: Unlike the correlation-induced Mott transition and disorder-induced Anderson one which appear to hold for a weak localization limit, we have studied the new types of the metal-insulator transitions (MITs) induced by strong defect-phonon-carrier and electron -phonon interactions in doped compounds. We formulate a strong localization limit of the MIT problem by applying the continuum theories of extrinsic (or defect-phonon-assisted) and intrinsic (or phonon-assisted) self-trapping of carriers to the doped systems. We find that th e criterion for the doping induced MIT gives the critical doping concentrations x c = 0.06 for La 2− x Sr x CuO 4 in accordance with observations. Key differences between the MITs in amorphous and crystalline doped systems are discussed.
1 citations
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01 Jan 2009TL;DR: In this article, the authors review two recent theoretical works on strongly correlated electrons on typical frustrated lattices and derive a low-energy effective model for the 3-orbital t2g Hubbard model on the pyrochlore lattice at quarter filling.
Abstract: We review our two recent theoretical works on strongly correlated electrons on typical frustrated lattices. The first topic is about a Mott transition in the single-band Hubbard model on anisotropic triangular lattice, and we discuss a reentrant behaviour of metal-insulator transition, consistent with that in a ?-type BEDT-TTF salt. The second topic is about heavy fermion behaviour in the vanadium spinel LiV2O4. We study the 3-orbital t2g Hubbard model on the pyrochlore lattice at quarter filling and derive its low-energy effective model. The correlations of spin and orbital degrees of freedom are discussed.
1 citations
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TL;DR: In this article, the authors derived and numerically solved one-dimensional, quarter-filled electron systems with a backward scattering, the Umklapp process, and couplings with 0, 2 k F, 4 k F phonons.
1 citations
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TL;DR: In this article, a two-band Peierls-Hubbard model was used to study the commensurate state with threefold lattice distortion in the insulating phase of DCNQI2Cu.
1 citations