Mott transition

About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.

Mott Transitions in Three-Orbital Hubbard Model at Fractional Band Filling

Abstract: We investigate the Mott transitions in the three-orbital Hubbard model by means of the dynamical mean field theory with continuous-time quantum Monte Carlo simulations. We obtain the phase diagram determined in the orbital level splitting versus Hubbard interaction plane in the case of two electrons per site. It is also found that the introduction of holes into the orbital selective Mott insulating phase induces the metallic state with heavy quasiparticles.

Orbital polarization in narrow band systems: Application to the volume collapse in Ce

Abstract: A novel technique for treating orbital polarization is presented. The single electron eigenvalue shifts that emanated from the orbital polarization are of the form − E 3 Lm l , where E 3 is the Racah parameter, L is the orbital moment and m l the azimuthal quantum number. Thereby the effect of Hund's second rule is included not only in the total energy, but also in the eigenvalue splittings which are required in the energy band calculation for the solid. The calculations also incorporate the exchange and correlation potential in the local spin density approximation as well as the spin-orbit coupling. The self-consistently calculated equation-of-state for the light lanthanide Ce is presented. The observed volume collapse is well described by the parameter free calculations and accordingly the volume collapse in Ce is described as a Mott transition of the 4f electron.

Visualizing the Mott transition

Abstract: Correlated electronic systems involve strong shortrange repulsion. At integer filling, the primary effect of correlation is the emergence of an insulating state where band theory predicts a metal. Understanding the transition from a metal to this ‘Mott insulator’, as interaction strength is increased, and the effect of doping the Mott state, are classic problems in quantum many-body physics. They have been explored for decades, starting with the approximate solutions of Hubbard. The real breakthrough came in the 1990s with the advent of dynamical mean field theory, which mapped the correlated system to an embedded single site, and described the detailed spectral evolution across the Mott transition. The only deficiency in this approach is the neglect of spatial correlations, and, possibly, the lack of some ‘visual intuition’ about the transition. We discuss a complementary approach, which provides a reasonable description of Mott physics in a real-space setting and allows a certain degree of visualization. This article provides a pedagogical review of our approach and presents some illustrative results.

An Analogue of Mott Transition in Compensated GaAs

Abstract: The conductivity of compensated GaAs with Nd≈Na≈ ≈2.5.101 7 cm-3 was investigated down to T = 0,5°K. To explain the results of the measurements it was suggested that the electrons at low temperature are localized in a narrow continuum of states near the bottom of the conduction band. At the appropriate concentration of the electrons a Mott transition occurs.