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Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this article , a filling-controlled Mott transition induced by gating was investigated, which has the advantage of avoiding disorder introduced by dopants and stoichiometric changes, and it was shown that there is significant incoherent weight at the Fermi level in the metallic phase when the transition is induced by Gating.
Abstract: ${\mathrm{NiS}}_{2}$ has been widely regarded as a model system to study the bandwidth-controlled Mott transition, as enabled by isovalent Se chemical substitution on the S sites. Motivated by advances in electrostatic gating, we theoretically investigate the filling-controlled Mott transition induced by gating, which has the advantage of avoiding disorder introduced by dopants and stoichiometric changes. We use combined density-functional theory (DFT) and dynamical mean-field theory (DMFT) to study such a filling-controlled transition and compare it with the case of bandwidth control. We draw a temperature-filling phase diagram and find that the Mott-insulator to metal transition occurs with modest added electron concentrations, well within the capabilities of existing electrostatic gating experiments. We find that there is significant incoherent weight at the Fermi level in the metallic phase when the transition is induced by gating. In contrast, the spectral weight remains rather coherent in the case of the bandwidth-controlled transition.
TL;DR: In this article , the authors report the spectroscopic and transport evidences of quantum critical phenomena of an exciton Mott metal-insulator-transition in black phosphorus, and characterize an evolution from optical insulator with sharp excitonic transition to metallic electron-hole plasma phases featured by broad absorption and population inversion.
Abstract: Quantum phase transition refers to the abrupt change of ground states of many-body systems driven by quantum fluctuations. It hosts various intriguing exotic states around its quantum critical points approaching zero temperature. Here we report the spectroscopic and transport evidences of quantum critical phenomena of an exciton Mott metal-insulator-transition in black phosphorus. Continuously tuning the interplay of electron-hole pairs by photo-excitation and using Fourier-transform photo-current spectroscopy as a probe, we measure a comprehensive phase diagram of electron-hole states in temperature and electron-hole pair density parameter space. We characterize an evolution from optical insulator with sharp excitonic transition to metallic electron-hole plasma phases featured by broad absorption and population inversion. We also observe strange metal behavior that resistivity is linear in temperature near the Mott transition boundaries. Our results exemplify an ideal platform to investigating strongly-correlated physics in semiconductors, such as crossover between superconductivity and superfluity of exciton condensation.
TL;DR: In this article , the quantum phase transition from a metal to a Wigner-Mott insulator at fractional commensurate filling on a two-leg ladder was studied.
Abstract: We study theoretically the quantum phase transition from a metal to a Wigner-Mott insulator at fractional commensurate filling on a two-leg ladder. We show that a continuous transition out of a symmetry-preserving Luttinger liquid metal is possible where the onset of insulating behavior is accompanied by the breaking of the lattice translation symmetry. At fillings $\ensuremath{
u}=1/m$ per spin per unit cell, we find that the spin degrees of freedom also acquire a gap at the Wigner-Mott transition for odd integer $m$. In contrast for even integer $m$, the spin sector remains gapless and the resulting insulator is a ladder analog of the two-dimensional spinon surface state. In both cases, a charge neutral spinless mode remains gapless across the Wigner-Mott transition. We discuss physical properties of these transitions and comment on insights obtained for thinking about continuous Wigner-Mott transitions in two-dimensional systems which are being studied in moire materials.
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01 Jan 2008
TL;DR: In this article, the first order phase transition in YbInCu$_4$ and its alloys in a wide range of magnetic fields and temperatures are perfectly described in terms of a simple entropy transition for free Yb ions.
Abstract: The puzzling properties of the first order phase transition in YbInCu$_4$ and its alloys in the wide range of magnetic fields and temperatures are perfectly described in terms of a simple entropy transition for free Yb ions In particular, it turns out that the transition line in the $(B,T)$-plane is very close to the elliptic shape, as it has been observed experimentally Similar calculations are done, and the experiments are proposed for the $(\gamma{-}\alpha)$ phase transition in Ce in Megagauss fields We speculate, that in case of YbInCu$_4$ the first order transition is a Mott transition between a higher temperature phase in which localized moments are stabilized by the entropy terms in the free energy, and a band-like non-magnetic ground state of the $f$-electrons
01 Jan 1992
TL;DR: In this paper, it was shown that if the filling factor in the metal insulator regions has exact integer or fractional values then the quantum Hall effect (QHE) can be explained and its accuracy depends on the nature of the transition region between the insulator and the metallic domains.
Abstract: Since dissipative transport properties always depend on matrix elements containing the screened or selfconsistent potential, there is a close connection between the form of the screened potential and the transport coefficients. In the quantum Hall regime the current may be dissipationless. However, the potential still plays a role because of the possibility of a metal insulator transition of the Mott type /1/. The condition for such a transition is eVsc > kT where Vsc is the screened potential and kT may be interpreted as the thermal energy belonging to the guiding center of an electron. If the filling factor in the insulator regions have exact integer or fractional values then the quantum Hall effect (QHE) can be explained and its accuracy depends on the nature of the transition region between the insulator and the metallic domains. This problem is not understood.