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Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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TL;DR: In this paper, the binding energy of a D − ion in the presence of other free carriers is calculated in polar crystals, where it is assumed that the effective interaction between each of the two electrons and the positive ion is described by Thomas-Fermi potential.
TL;DR: In this paper, a unified view of the phase diagram observed in high-Tc superconducting materials (HTSC) was presented, and the authors obtained the results, which yield a unified approach accounting for essential features observed in HTSC.
TL;DR: The results of Hartmann and co-workers on the possible existence of an Anderson-Mott transition in positive muon diffusion are used to predict the dependence of the depolarization rate on impurity concentration.
Abstract: The results of Hartmann and co-workers on the possible existence of an Anderson–Mott transition in positive muon diffusion are used to predict the dependence of the depolarization rate on impurity concentration. It is suggested that the experiment provides a possible method for the determination of the critical index associated with the dependence of localization length on disorder parameter.
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TL;DR: In this article, pressure-dependent transient absorption spectroscopy (fs-TAS) was used to investigate the influence of lattice properties on hot-carrier cooling in metal halide perovskites.
Abstract: Hot-carrier cooling (HCC) in metal halide perovskites in the high-density regime is significantly slower compared to conventional semiconductors. This effect is commonly attributed to a hot-phonon bottleneck but the influence of the lattice properties on the HCC behaviour is poorly understood. Using pressure-dependent transient absorption spectroscopy (fs-TAS) we find that at an excitation density below Mott transition, pressure does not affect the HCC. On the contrary, above Mott transition, HCC in methylammonium lead iodide (MAPbI3) is around two times as fast at 0.3 GPa compared to ambient pressure. Our electron-phonon coupling calculations reveal about two times stronger electron-phonon coupling for the inorganic cage mode at 0.3 GPa. However, our experiments reveal that pressure promotes faster HCC only above Mott transition. Altogether, these findings suggest a change in the nature of excited carriers in the high-density regime, providing insights on the electronic behavior of devices operating at such high charge-carrier density.
TL;DR: In this article, a variational calculation for the problem of screening of a point charge in a layered correlated metal for dopings close to the Mott transition where the screening is non-linear due to the proximity to the incompressible insulating state is presented.
Abstract: We describe a variational calculation for the problem of screening of a point charge in a layered correlated metal for dopings close to the Mott transition where the screening is non-linear due to the proximity to the incompressible insulating state. We find that external charge can induce locally incompressible regions and that the non-linear dependence of the screening on density can induce overscreening in the nearest nearby layers while preserving overall charge neutrality.