Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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01 Jan 2004
TL;DR: In this article, the short-range, one-band model for electron correlations in a narrow energy band is solved exactly in the one-dimensional case, and the ground-state energy, wave function, and chemical potentials are obtained, and it is found that the ground state exhibits no conductor-insulator transition as the correlation strength is increased.
Abstract: The short-range, one-band model for electron correlations in a narrow energy band is solved exactly in the one-dimensional case. The ground-state energy, wave function, and the chemical potentials are obtained, and it is found that the ground state exhibits no conductor-insulator transition as the correlation strength is increased.
01 Jan 2007
TL;DR: In this article, the origin of the metal-insulator transition in doped insulators was shown to be similar to that proposed by Herzfeld a long time ago, namely, due to fluctuations of solvated electrons.
Abstract: Although most metal–insulator transitions in doped insulators are generally viewed as Mott transitions, some systems seem to deviate from this scenario. Alkali metal–ammonia solutions are a brilliant example of this. They reveal a phase separation in the range of metal concentrations where a metal–insulator transition occurs. Using a mean spherical approximation for quantum polarizable fluids, we argue that the origin of the metal–insulator transition in such a system is likely to be similar to that proposed by Herzfeld a long time ago, namely, due to fluctuations of solvated electrons. We also show how the phase separation may appear: the Herzfeld instability of the insulator occurs at a concentration for which the metallic phase is also unstable. As a consequence, the Mott transition cannot occur at low temperature. The proposed scenario may provide a new insight into the metal–insulator
TL;DR: In this paper, the authors studied the interplay between disorder (W) and interaction (U) in a boson Anderson-Hubbard model and obtained the metal-insulator phase diagram for a system in which the number of bosons is equal to the total number of sites.
30 Jul 2012
TL;DR: In this article, the effect of extrinsic compensation and impurity concentration on the virtual Anderson transition was investigated in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells.
Abstract: Earlier we reported an observation at low temperatures of activation conductivity with small activation energies in strongly doped uncompensated layers of p-GaAs/AlGaAs quantum wells. We attributed it to Anderson delocalization of electronic states in the vicinity of the maximum of the narrow impurity band due to the small width of the impurity band characterized by weak disorder. In this case the carriers were activated from the "band tail" while its presence was related to weak background compensation. Here we study an effect of the extrinsic compensation and of the impurity concentration on this "virtual" Anderson transition. It was shown that an increase of compensation initially does not affect the Anderson transition, however at strong compensations the transition is suppressed due to increase of disorder. However at larger impurity concentration the conductivity becomes to be metallic due to Mott transition.
28 Apr 1999
TL;DR: In this article, the possibility of two-pulse photon echo was investigated analytically in a bulk direct-gap semiconductor under near resonant transition regime below the absorption edge of the crystal, where the excitation intensity was chosen to be in the low-to-moderate power regime such that the photoinduced electron-hole pair density remains below the Mott transition limit.
Abstract: Based upon the time dependent perturbation theory for coherent radiation-semiconductor interaction, the possibility of occurrence of the phenomenon of two-pulse photon echo has been investigated analytically in a bulk direct-gap semiconductor under near resonant transition regime below the absorption edge of the crystal. The excitation intensity is chosen to be in the low-to-moderate power regime such that the photoinduced electron-hole pair density remains below the Mott transition limit and the weakly bound Wannier-Mott excitonic structure of the crystal absorption edge is manifested. The band gap renormalization effect is also taken into account. Numerical estimation of the transmitted intensity has been made for electron-hole transition to the 1s excitonic states in the bulk CdS crystal. The analytical results demonstrate the occurrence of photon echo in direct-gap semiconductors.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.