Topic
Mott transition
About: Mott transition is a research topic. Over the lifetime, 2444 publications have been published within this topic receiving 78401 citations.
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01 Jan 1985
TL;DR: In this paper, Anderson et al. pointed out a role of disorder and predicted the metal non-metal transition to occur when the Fermi level, EF, crosses the mobility edge, EC, from the extended to the localized states.
Abstract: A large variety of semiconductors undergo a non-metal metal transition Mott transition when the concentration of impurities is increased to a critical value N given by:
$$ N_c^{1/3} \cdot {a_B} \simeq 0.25 $$
(1)
where aB is the effective Bohr radius of the impurity center. Another approach to the metal non-metal transition (MNM) due to Anderson points out a role of disorder and predicts the MNM transition to occur when the Fermi level, EF, crosses the mobility edge, EC, from the extended to the localized states. The central problem in the theory of the MNM transition in disordered systems is to understand the interplay between the effects of correlation and disorder [1]. In addition there have been many attempts to include the nature of disorder in considerations of the MNM transition. Castner et al. [2] have demonstrated for silicon the relation between the type of donor impurity and the tendency to the electron delocalization. Prom the other point of view the effect of increasing the dopant concentration is to increase the number of donor pairs and clusters. They form low energy tails of the density of states significantly increasing the binding energy of electrons [3]. Fritzsche [4] pointed out the role of compensation in the increase of NC. At given donor concentration, ND, with increasing compensation, K = NA/ND (NA is an acceptor concentration) several effects occur i/the total concentration of scattering centers increases, ii/the impurity potential becomes less screened, iii/EF is lowered and IV/the randomness of the donor potential increases leading to the enhancement of the impurity band-width.
01 Jan 2016
05 Feb 2023
TL;DR: In this paper , a minimal effective impurity model was proposed to capture the phenomenology of the Mott-Hubbard metal-insulator transition (MIT) of the half-filled Hubbard model on the Bethe lattice in infinite dimensions.
Abstract: We propose a minimal effective impurity model that captures the phenomenology of the Mott-Hubbard metal-insulator transition (MIT) of the half-filled Hubbard model on the Bethe lattice in infinite dimensions as observed by dynamical mean field theory (DMFT). This involves extending the standard Anderson impurity model Hamiltonian to include an explicit Kondo coupling $J$, as well as a local on-site correlation $U_b$ on the conduction bath site connected directly to the impurity. For the case of attractive local bath correlations ($U_{b}<0$), the extended Anderson impurity model (e-SIAM) sheds new light on several aspects of the DMFT phase diagram. For example, the $T=0$ metal-to-insulator quantum phase transition (QPT) is preceded by an excited state quantum phase transition (ESQPT) where the local moment eigenstates are emergent in the low-lying spectrum. Long-ranged fluctuations are observed near both the QPT and ESQPT, suggesting that they are the origin of the quantum critical scaling observed recently at high temperatures in DMFT simulations. The $T=0$ gapless excitations at the QCP display particle-hole interconversion processes, and exhibit power-law behaviour in self-energies and two-particle correlations. These are signatures of non-Fermi liquid behaviour that emerge from the partial breakdown of the Kondo screening.
28 Jul 2022
TL;DR: In this article , the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems is considered.
Abstract: We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of $SU(N)$-symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.
TL;DR: In this article , the authors take advantage of the threshold character of photoinduced transition and propose a setup that consists of a mid-infrared laser pulse and a train of short pulses separated by a half period of the midinfrared with alternating phases.
Abstract: The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the material into an insulating phase. When shining a Mott insulator with a strong laser pulse, the electric field may induce the creation of doublon-hole pairs, triggering a photoinduced transition into a metallic state. In this paper, we take advantage of the threshold character of this photoinduced transition and we propose a setup that consists of a midinfrared laser pulse and a train of short pulses separated by a half period of the midinfrared with alternating phases. By varying the time delay between the two pulses and the internal carrier envelope phase of the short pulses, we achieve control of the phase transition, which leaves its fingerprint at its high harmonic spectrum.