Topic
Nanocrystalline silicon
About: Nanocrystalline silicon is a research topic. Over the lifetime, 14554 publications have been published within this topic receiving 265137 citations.
Papers published on a yearly basis
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TL;DR: In this article, the conduction and valence-band width of amorphous silicon hydride is inferred from time-of-flight measurements of the temperature dependence of the electron and hole drift mobilities, and a multiple-trapping model of dispersive transport.
Abstract: The width of the conduction- and valence-band tails in amorphous silicon hydride are inferred from time-of-flight measurements of the temperature dependence of the electron and hole drift mobilities, and a multiple-trapping model of dispersive transport.
447 citations
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434 citations
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TL;DR: In this article, the responsible electronic quantum size effects and excited-state photophysics were discussed and analyzed for both nanocrystal silicon and porous silicon thin films, and the possibility of incorporating optically active, silicon-based material into integrated circuit processing was discussed.
Abstract: Both nanocrystal silicon and porous silicon thin films show efficient visible luminescence at room temperature, thus suggesting the possibility of introducing some form of optically active, silicon-based material into integrated circuit processing. In this context, I discuss and analyze the responsible electronic quantum size effects and excited-state photophysics. In a broader context I discuss silicon optical and electronic properties as a function of dimensionality and surface chemistry. As one progresses from trans-polysilane (1D-Si) through puckered sheet polysilyne (2D-Si) to diamond lattice silicon (3D-Si), there is a systematic progression from direct to indirect gap behavior
432 citations