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Showing papers on "Nanoelectronics published in 1994"


Journal ArticleDOI
TL;DR: A quantum molecular dynamics simulationscheme has been developed which is suitable for the study of highly nonlinear electron dynamics far from equilibrium in semiconducting devices of nanometer size.

12 citations


01 Jan 1994
TL;DR: In this paper, Klimeck et al. analyzed particle interactions in two structural limits: 1) large, and 2) small cross-sections, in which the treatments are fundamentally different.
Abstract: The objective of this work is t o shed light on electron transport through sub-micron semiconductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device, the double barrier resonant tunneling diode. In this work we analyze particle interactions in two structural limits: 1) large, and 2) small cross-sections, in which the treatments are fundamentally different. Large cross-section structures involve particle-interactions with many electrons and these effects can be described in the Keldysh formalism in a single-particle picture by effective potentials. We present model calculations treating the phonon-peak a,nd electrical bistability in this limit. Small cross-section structures involve only a few particles, whose interactions cannot be described by effective potentials, due to strong particle correlations. The single-particle picture breaks down and a full many-body description has t o be used. We present high bias calculations for electron transport through single quantum dots (artificial atoms) and an ana,lysis of the linear response conductance spectrum of two coupled quantum dots (artificial nnolecules). ... Purdue University 111 Gerhard Klimeck Purdue University Gerhard Klimeck

6 citations


Book ChapterDOI
01 Jan 1994
TL;DR: In this paper, the authors reviewed ongoing efforts at NIST to develop an integrated approach to nanometer-scale lithography for silicon and gallium arsenide using the scanning tunneling microscope in conjunction with other advanced techniques such as molecular beam epitaxy and reactive ion etching.
Abstract: The emerging field of nanoelectronics will soon demand innovative methods for the fabrication and characterization of nanometer-sized structures. This paper reviews ongoing efforts at NIST to develop an integrated approach to nanometer-scale lithography for silicon and gallium arsenide using the scanning tunneling microscope in conjunction with other advanced techniques such as molecular beam epitaxy and reactive ion etching.