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Showing papers on "Nanoelectronics published in 2008"


Journal ArticleDOI
18 Apr 2008-Science
TL;DR: This work reports on electron transport in quantum dot devices carved entirely from graphene, demonstrating the possibility of molecular-scale electronics based on graphene.
Abstract: The exceptional electronic properties of graphene, with its charge carriers mimicking relativistic quantum particles and its formidable potential in various applications, have ensured a rapid growth of interest in this new material. We report on electron transport in quantum dot devices carved entirely from graphene. At large sizes (>100 nanometers), they behave as conventional single-electron transistors, exhibiting periodic Coulomb blockade peaks. For quantum dots smaller than 100 nanometers, the peaks become strongly nonperiodic, indicating a major contribution of quantum confinement. Random peak spacing and its statistics are well described by the theory of chaotic neutrino billiards. Short constrictions of only a few nanometers in width remain conductive and reveal a confinement gap of up to 0.5 electron volt, demonstrating the possibility of molecular-scale electronics based on graphene.

2,032 citations


Journal ArticleDOI
TL;DR: Multiwalled carbon nanotubes with a mean fracture strength >100 GPa are reported, which exceeds earlier observations by a factor of approximately three and are in excellent agreement with quantum-mechanical estimates for nanot tubes containing only an occasional vacancy defect, and are approximately 80% of the values expected for defect-free tubes.
Abstract: The excellent mechanical properties of carbon nanotubes are being exploited in a growing number of applications from ballistic armour to nanoelectronics. However, measurements of these properties have not achieved the values predicted by theory due to a combination of artifacts introduced during sample preparation and inadequate measurements. Here we report multiwalled carbon nanotubes with a mean fracture strength >100 GPa, which exceeds earlier observations by a factor of approximately three. These results are in excellent agreement with quantum-mechanical estimates for nanotubes containing only an occasional vacancy defect, and are ∼80% of the values expected for defect-free tubes. This performance is made possible by omitting chemical treatments from the sample preparation process, thus avoiding the formation of defects. High-resolution imaging was used to directly determine the number of fractured shells and the chirality of the outer shell. Electron irradiation at 200 keV for 10, 100 and 1,800 s led to improvements in the maximum sustainable loads by factors of 2.4, 7.9 and 11.6 compared with non-irradiated samples of similar diameter. This effect is attributed to crosslinking between the shells. Computer simulations also illustrate the effects of various irradiation-induced crosslinking defects on load sharing between the shells. The mechanical properties of carbon nanotubes rarely match the values predicted by theory owing to a combination of artefacts introduced during sample preparation and inadequate measurements. However, by avoiding chemical treatments and using high-resolution imaging, it is possible to obtain values of the mean fracture strength that exceed previous values by approximately a factor of three.

1,038 citations


Journal ArticleDOI
TL;DR: In this article, the authors present a control and uniform assembly of bottom-up nanowire (NW) materials with high scalability, which is one of the significant bottleneck challenges facing the integration of nanowires for electronic devices.
Abstract: Controlled and uniform assembly of “bottom-up” nanowire (NW) materials with high scalability presents one of the significant bottleneck challenges facing the integration of nanowires for electronic...

573 citations


Journal ArticleDOI
28 Oct 2008-ACS Nano
TL;DR: The controlled growth and field-emission properties of individual nanostructures, respectively, are described in this issue, providing new approaches and insight into thecontrolled growth and electrical properties of ZnO nanostructure.
Abstract: Zinc oxide is a unique material that exhibits exceptional semiconducting, piezoelectric, and pyroelectric properties. Nanostructures of ZnO are equally as important as carbon nanotubes and silicon nanowires for nanotechnology and have great potential applications in nanoelectronics, optoelectronics, sensors, field emission, light-emitting diodes, photocatalysis, nanogenerators, and nanopiezotronics. Fundamental understanding about the growth of ZnO nanowires is of critical importance for controlling their size, composition, structure, and corresponding physical and chemical properties. The papers by She et al. and Ito et al. in this issue describe the controlled growth and field-emission properties of individual nanostructures, respectively. These studies provide new approaches and insight into the controlled growth and electrical properties of ZnO nanostructures.

480 citations


Journal ArticleDOI
TL;DR: The results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.
Abstract: We report studies on a nanoscale resistance switching memory structure based on planar silicon that is fully compatible with CMOS technology in terms of both materials and processing techniques employed. These two-terminal resistance switching devices show excellent scaling potential well beyond 10 Gb/cm2 and exhibit high yield (99%), fast programming speed (5 ns), high on/off ratio (103), long endurance (106), retention time (5 months), and multibit capability. These key performance metrics compare favorably with other emerging nonvolatile memory techniques. Furthermore, both diode-like (rectifying) and resistor-like (nonrectifying) behaviors can be obtained in the device switching characteristics in a controlled fashion. These results suggest that the CMOS compatible, nanoscale Si-based resistance switching devices may be well suited for ultrahigh-density memory applications.

472 citations


Journal ArticleDOI
TL;DR: In this paper, the authors studied both the electron and hole conduction of nanotube transistors and found that the sensing mechanisms can be unambiguously identified from extensive protein-adsorption experiments on such devices.
Abstract: Carbon nanotube transistors have outstanding potential for electronic detection of biomolecules in solution The physical mechanism underlying sensing however remains controversial, which hampers full exploitation of these promising nanosensors Previously suggested mechanisms are electrostatic gating, changes in gate coupling, carrier mobility changes, and Schottky barrier effects We argue that each mechanism has its characteristic effect on the liquid gate potential dependence of the device conductance By studying both the electron and hole conduction, the sensing mechanisms can be unambiguously identified From extensive protein-adsorption experiments on such devices, we find that electrostatic gating and Schottky barrier effects are the two relevant mechanisms, with electrostatic gating being most reproducible If the contact region is passivated, sensing is shown to be dominated by electrostatic gating, which demonstrates that the sensitive part of a nanotube transistor is not limited to the contact region, as previously suggested Such a layout provides a reliable platform for biosensing with nanotubes

455 citations


Journal ArticleDOI
Yoshiki Kamata1
TL;DR: In this article, the opportunities and challenges of high-k/Ge MOSFETs are discussed on the basis of the material properties of Ge oxide to provide insights for future progress.

443 citations


Journal ArticleDOI
TL;DR: In this paper, the authors review advances in chemically synthesized semiconductor nanowires as nanoelectronic devices and discuss 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowire within a bottom-up approach.
Abstract: Semiconductor nanowires represent unique materials for exploring phenomena at the nanoscale. Developments in nanowire growth have led to the demonstration of a wide range of nanowire materials with precise control of composition, morphology, and electrical properties, and it is believed that this excellent control together with small channel size could yield device performance exceeding that obtained using top-down techniques. Here, we review advances in chemically synthesized semiconductor nanowires as nanoelectronic devices. We first introduce basic nanowire field-effect transistor structures and review results obtained from both p- and n-channel homogeneous composition nanowires. Second, we describe nanowire heterostructures, show that by using nanowire heterostructures, several limiting factors in homogeneous nanowire devices can be mitigated, and demonstrate that nanowire transistor performance can reach the ballistic limit and exceed state-of-the-art planar devices. Third, we discuss basic methods for organization of nanowires necessary for fabricating arrays of device and circuits. Fourth, we introduce the concept of crossbar nanowire circuits, discuss results for both transistor and nonvolatile switch devices, and describe unique approaches for multiplexing/demultiplexing enabled by synthetically coded nanowire. Fifth, we discuss the unique application of thin-film nanowire transistor arrays on low-cost substrates and illustrate this with results for relatively high-frequency ring oscillators and completely transparent device arrays. Finally, we describe 3-D heterogeneous integration that is uniquely enabled by multifunctional nanowires within a bottom-up approach.

375 citations


Journal ArticleDOI
Joerg Appenzeller1
16 Jan 2008
TL;DR: By understanding the unique capabilities of carbon nanotubes and using them in unconventional designs, novel nanoelectronic applications may become feasible and much better control of materials quality must be obtained, and new fabrication processes must be developed before such applications can be realized.
Abstract: Carbon nanotube devices offer intrinsic advantages for high-performance logic device applications. The ultrasmall body of a carbon nanotube-the tube diameter-is the key feature that should allow aggressive channel length scaling, while the intrinsic transport properties of the nanotube ensure at the same time high on-currents. In addition, the narrowness of the tube is critical to implementation of novel device concepts like the tunneling transistor. By understanding the unique capabilities of carbon nanotubes and using them in unconventional designs, novel nanoelectronic applications may become feasible. However, much better control of materials quality must be obtained, and new fabrication processes must be developed before such applications can be realized.

358 citations


Journal ArticleDOI
18 Apr 2008-Science
TL;DR: This copy is for your personal, non-commercial use only and can be found in the online Updated information and services, http://www.sciencemag.org/content/320/5874/324.full.html version of this article at: including high-resolution figures, can be seen at:.
Abstract: This copy is for your personal, non-commercial use only. clicking here. colleagues, clients, or customers by , you can order high-quality copies for your If you wish to distribute this article to others here. following the guidelines can be obtained by Permission to republish or repurpose articles or portions of articles ): December 6, 2013 www.sciencemag.org (this information is current as of The following resources related to this article are available online at http://www.sciencemag.org/content/320/5874/324.full.html version of this article at: including high-resolution figures, can be found in the online Updated information and services, http://www.sciencemag.org/content/320/5874/324.full.html#related found at: can be related to this article A list of selected additional articles on the Science Web sites http://www.sciencemag.org/content/320/5874/324.full.html#ref-list-1 , 6 of which can be accessed free: cites 14 articles This article 20 article(s) on the ISI Web of Science cited by This article has been http://www.sciencemag.org/content/320/5874/324.full.html#related-urls 5 articles hosted by HighWire Press; see: cited by This article has been http://www.sciencemag.org/cgi/collection/app_physics Physics, Applied subject collections: This article appears in the following

355 citations


Journal ArticleDOI
TL;DR: In this article, the electronic transport properties of nanowire field effect transistors (NW-FETs) are discussed in detail, and four different device concepts are studied in detail.
Abstract: This paper discusses the electronic transport properties of nanowire field-effect transistors (NW-FETs). Four different device concepts are studied in detail: Schottky-barrier NW-FETs with metallic source and drain contacts, conventional-type NW-FETs with doped NW segments as source and drain electrodes, and, finally, two new concepts that enable steep turn-on characteristics, namely, NW impact ionization FETs and tunnel NW-FETs. As it turns out, NW-FETs are, to a large extent, determined by the device geometry, the dimensionality of the electronic transport, and the way of making contacts to the NW. Analytical as well as simulation results are compared with experimental data to explain the various factors impacting the electronic transport in NW-FETs.

Journal ArticleDOI
TL;DR: The Si/a-Si x Ag NW devices represent a highly scalable and promising nanodevice element for assembly and fabrication of dense nonvolatile memory and programmable nanoprocessors.
Abstract: Radial core/shell nanowires (NWs) represent an important class of nanoscale building blocks with substantial potential for exploring fundamental electronic properties and realizing novel device app...

Journal ArticleDOI
03 Sep 2008
TL;DR: An introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical and atomistic effects.
Abstract: We aim to provide engineers with an introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical and atomistic effects. We first review the basis for the traditional, semiclassical description of carriers that has served device engineers for more than 50 years. We then describe why this traditional approach loses validity at the nanoscale. Next, we describe semiclassical ballistic transport and the Landauer-Buttiker approach to phase-coherent quantum transport. Realistic devices include interactions that break quantum mechanical phase and also cause energy relaxation. As a result, transport in nanodevices is between diffusive and phase coherent. We introduce the NEGF approach, which can be used to model devices all the way from ballistic to diffusive limits. This is followed by a summary of equations that are used to model a large class of structures such as nanotransistors, carbon nanotubes, and nanowires. Applications of the NEGF method in the ballistic and scattering limits to silicon nanotransistors are discussed.

Journal ArticleDOI
TL;DR: The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure and the FETs made from smooth ZnNO Nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior.
Abstract: Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

Journal ArticleDOI
TL;DR: This work shows a chiral branched PbSe nanowires structure, which is formed by a vapour-liquid-solid branching from a central nanowire with an axial screw dislocation, and provides a direct visualization of the Eshelby Twist.
Abstract: Manipulating the morphology of inorganic nanostructures, such as their chirality and branching structure, has been actively pursued as a means of controlling their electrical, optical and mechanical properties. Notable examples of chiral inorganic nanostructures include carbon nanotubes, gold multishell nanowires, mesoporous nanowires and helical nanowires. Branched nanostructures have also been studied and been shown to have interesting properties for energy harvesting and nanoelectronics. Combining both chiral and branching motifs into nanostructures might provide new materials properties. Here we show a chiral branched PbSe nanowire structure, which is formed by a vapour-liquid-solid branching from a central nanowire with an axial screw dislocation. The chirality is caused by the elastic strain of the axial screw dislocation, which produces a corresponding Eshelby Twist in the nanowires. In addition to opening up new opportunities for tailoring the properties of nanomaterials, these chiral branched nanowires also provide a direct visualization of the Eshelby Twist.

Journal ArticleDOI
TL;DR: The use of micrometer and nanometer-sized organic single crystals to fabricate devices can retain all the advantages of single crystals, avoid the difficulties of growing large crystals, and provide a way to characterize organic semiconductors more efficiently as mentioned in this paper.
Abstract: The use of micrometer and nanometer-sized organic single crystals to fabricate devices can retain all the advantages of single crystals, avoid the difficulties of growing large crystals, and provide a way to characterize organic semiconductors more efficiently. Moreover, the effective use of such "small" crystals will be beneficial to nanoelectronics. Here we review the recent progress of organic single-crystalline transistors based on micro-/nanometer-sized structures, namely fabrication methods and related technical issues, device properties, and current challenges.

Proceedings ArticleDOI
01 Dec 2008
TL;DR: This paper discusses and analyzes the main challenges and limitations of CMOS scaling, not only from physical and technological point of view, but also from material (e.g., high-k vs. low-k) and economical points of view as well.
Abstract: The continued physical feature size scaling of complementary metal oxide semiconductor (CMOS) transistors is experiencing asperities due to several factors, and it is expected to reach its boundary at size of 22 nm technology by 2018 This paper discusses and analyzes the main challenges and limitations of CMOS scaling, not only from physical and technological point of view, but also from material (eg, high-k vs low-k) and economical point of view as well The paper also addresses alternative non-CMOS devices (ie, nanodevices) that are potentially able to solve the CMOS problems and limitations

Journal ArticleDOI
TL;DR: The fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz is reported, paving the way for future multi-GHz nanoelectronics.
Abstract: Due to their excellent electrical properties, metallic carbon nanotubes are promising materials for interconnect wires in future integrated circuits. Simulations have shown that the use of metallic carbon nanotube interconnects could yield more energy efficient and faster integrated circuits. The next step is to build an experimental prototype integrated circuit using carbon nanotube interconnects operating at high speed. Here, we report the fabrication of the first stand-alone integrated circuit combining silicon transistors and individual carbon nanotube interconnect wires on the same chip operating above 1 GHz. In addition to setting a milestone by operating above 1 GHz, this prototype is also a tool to investigate carbon nanotubes on a silicon-based platform at high frequencies, paving the way for future multi-GHz nanoelectronics.

Journal ArticleDOI
TL;DR: Using the concept of sacrificial layers and elevation of Au catalyst modulated by growth condition, this work demonstrates for the first time a large area direct transfer process for nanowires formed by a bottom-up approach that can maintain both the position and alignment.
Abstract: We report the controlled growth of planar GaAs semiconductor nanowires on (100) GaAs substrates using atmospheric pressure metalorganic chemical vapor deposition with Au as catalyst. These nanowires with uniform diameters are self-aligned in direction in the plane of (100). The dependence of planar nanowire morphology and growth rate as a function of growth temperature provides insights into the growth mechanism and identified an ideal growth window of 470 ( 10 °C for the formation of such planar geometry. Transmission electron microscopy images reveal clear epitaxial relationship with the substrate along the nanowire axial direction, and the reduction of twinning defect density by about 3 orders of magnitude compared to III-V semiconductor nanowires. In addition, using the concept of sacrificial layers and elevation of Au catalyst modulated by growth condition, we demonstrate for the first time a large area direct transfer process for nanowires formed by a bottom-up approach that can maintain both the position and alignment. The planar geometry and extremely low level of crystal imperfection along with the transferability could potentially lead to highly integrated III-V nanoelectronic and nanophotonic devices on silicon and flexible substrates.

Journal ArticleDOI
TL;DR: In this paper, the authors describe the current impact of nanoscale materials (nanoparticles and carbon nanotubes) in liquid crystal nanocomposites on the improvement of LC display (LCD) applications.
Abstract: In this Highlight article we will describe the current impact of nanoscale materials (nanoparticles and carbon nanotubes) in liquid crystal nanocomposites on the improvement of LC display (LCD) applications, an industry currently worth more than $60 billion per year. First tendencies clearly demonstrate the potential of nanomaterials to improve upon current LCD technologies with the discovery of new or modified switching modes, lower operating voltages, faster switching speeds, and higher contrast ratios—enormous advantages in a world with more LCDs than people (see ref. : D. W. Bruce, J. W. Goodby, J. R. Sambles and H. J. Coles, Introduction: New directions in liquid crystal science, Philos. Trans. R. Soc. London, Ser. A, 2006, 364, 2567–2571).

Journal ArticleDOI
TL;DR: Can ferroelectric materials help transistors overcome the 'Boltzmann tyranny' that limits the performances of conventional semiconductor devices?
Abstract: Can ferroelectric materials help transistors overcome the 'Boltzmann tyranny' that limits the performances of conventional semiconductor devices?

01 Jan 2008
TL;DR: New techniques for logic circuits and interconnect, for memory, and for clock and power distribution are discussed, and the role of geometrically regular circuits as one promising solution is discussed.
Abstract: Well-designed circuits are one key Binsulating( layer between the increasingly unruly behavior of scaled complementary metal-oxide-semiconductor devices and the systems we seek to construct from them. As we move forward into the nanoscale regime, circuit design is burdened to Bhide( more of the problems intrinsic to deeply scaled devices. How this is being accomplished is the subject of this paper. We discuss new techniques for logic circuits and interconnect, for memory, and for clock and power distribution. We survey work to build accurate simulation models for nanoscale devices. We discuss the unique problems posed by nanoscale lithography and the role of geometrically regular circuits as one promising solution. Finally, we look at recent computer-aided design efforts in modeling, analysis, and optimization for nanoscale designs with ever increasing amounts of statistical variation.

Journal ArticleDOI
TL;DR: In this paper, the performances of carbon nanotube (CNT) interconnects, both single and multiwall (SWNT and MWNT), are benchmarked against their copper counterparts at a realistic operating temperature (100degC).
Abstract: Using physics-based circuit models, the performances of carbon nanotube (CNT) interconnects, both single- and multiwall (SWNT and MWNT), are benchmarked against their copper counterparts at a realistic operating temperature (100degC). The models used capture various electron phonon scattering mechanisms and the dependence of quantum conductance on temperature and diameter. It is demonstrated that any performance comparison between CNT and copper wires needs to be done at realistic temperatures because changes in temperature affect copper and CNT interconnects quite differently. The results of this paper demonstrate that a hybrid system of copper/SWNT/MWNT offers the highest performance enhancement for interconnects.

Journal ArticleDOI
TL;DR: Comparison of the experimental data with simulations based on a semiclassical, ballistic transport model suggests that these sub-100 nm Ge/Si NWFETs with integrated high-kappa gate dielectric operate near the ballistic limit.
Abstract: Ge/Si core/shell nanowires (NWs) are attractive and flexible building blocks for nanoelectronics ranging from field-effect transistors (FETs) to low-temperature quantum devices. Here we report the first studies of the size-dependent performance limits of Ge/Si NWFETs in the sub-100 nm channel length regime. Metallic nanoscale electrical contacts were made and used to define sub-100 nm Ge/Si channels by controlled solid-state conversion of Ge/Si NWs to NiSixGey alloys. Electrical transport measurements and modeling studies demonstrate that the nanoscale metallic contacts overcome deleterious short-channel effects present in lithographically defined sub-100 nm channels. Data acquired on 70 and 40 nm channel length Ge/Si NWFETs with a drain−source bias of 0.5 V yield transconductance values of 78 and 91 µS, respectively, and maximum on-currents of 121 and 152 µA. The scaled transconductance and on-current values for a gate and bias voltage window of 0.5 V were 6.2 mS/µm and 2.1 mA/µm, respectively, for the 4...

Journal ArticleDOI
TL;DR: The idea of using self-assembled nanostructures to overcome the limitations of top-down fabrication has been the driving force behind the tremendous interest in semiconducting nanowires and nanotubes.


Journal ArticleDOI
TL;DR: The ability of semiconducting nanowire (NW) field effect transistors (FETs) to serve as highly sensitive label-free sensors for biochemicals, including small molecules, proteins, and nucleic acids, was demonstrated in this article.
Abstract: Recent studies have demonstrated the ability of semiconducting nanowire (NW) field-effect transistors (FETs) to serve as highly sensitive label-free sensors for biochemicals, including small molecules, proteins, and nucleic acids. The nanoscale confinement of the channel current in concert with the large-surface area-to-volume ratio enables charged molecules bound to the surface to effectively gate the device. Functionalization of the NW surface with specific receptors therefore enables direct electronic detection of particular molecules of interest. The original work in the field relied on NWs grown by the chemical vapor deposition method, which require hybrid bottom-up fabrication processes for device realization. The lack of reproducibility with these techniques and the associated inability to leverage the central advantage of complementary MOSFETs, namely, very large scale integration, have recently led a number of groups to create NW sensors using only traditional top-down fabrication techniques. In this paper, we focus primarily on these most recent studies and discuss necessary future studies as dictated by experimental and theoretical considerations.

Journal ArticleDOI
TL;DR: This is a concise review of the recent work on devices, circuits and architectures for possible hybrid semiconductor/nanodevice integrated circuits based on nanowire crossbars, with similar, simple, two-terminal devices formed at each crosspoint, including the so-called "CMOL' variety of the hybrids.
Abstract: This is a concise review of the recent work on devices, circuits and architectures for possible hybrid semiconductor/nanodevice integrated circuits based on nanowire crossbars, with similar, simple, two-terminal devices formed at each crosspoint. Special attention is given to the so-called "CMOL' variety of the hybrids, in which the crossbar is connected to the underlying CMOS circuit, using an area-distributed, pin-based interface. Recent detailed studies have shown that digital hybrid circuits may extend the Moore's Law progress of integrated circuits for 10 to 15 years. Even more impressive, mixed-signal neuromorphic networks ("CrossNets") may provide unparalleled performance for some important information processing tasks, and in future may become the first hardware basis for challenging the mammal cerebral cortex in density, far exceeding it in speed, at manageable power consumption. Recently, the hybrid circuit concept received a strong boost from the experimental demonstrations of reproducible crosspoint devices (latching switches) based on amorphous silicon and metal oxides, and of nanowire crossbars with 15-nm-scale half-pitch. However, CMOL technology still faces several significant challenges, briefly discussed in the last section.

Journal ArticleDOI
TL;DR: In this paper, the synthesis, properties, and applications of intramolecular junctions of carbon nanotubes are discussed in detail, and a brief summary and an outlook of future work are provided.
Abstract: For the miniaturization of microelectronics, carbon nanotubes (CNTs) are regarded as ideal candidates for the next generation of nanoelectronics because of their excellent properties. To realize CNT-based electronics, intramolecular junctions are required components, which can not only connect different CNTs for integration, but can also act as functional building blocks in the circuit, such as rectifiers, field-effect transistors, switches, amplifiers, photoelectrical devices, etc. Therefore, intense attention has been focused on this topic and many advances have been achieved, especially in recent years. On the other hand, some challenges also exist. To provide researchers with a comprehensive overview of this field, this review discusses the synthesis, properties, and applications of intramolecular junctions of CNTs in detail. Among them, the applications of CNT integration are discussed specially. Furthermore, a brief summary and an outlook of future work are provided.

Journal ArticleDOI
TL;DR: A wealth of completely novel devices and such with dramatically improved properties based either on a single/few or a large density of quantum dots appears as discussed by the authors, among them are single q-bit emitters, nano-flash memories, ultrafast lasers and amplifiers.
Abstract: Invention of non-disruptive fabrication technologies for semiconductor quantum dots presented a dream for generations of semiconductor device engineers. Today such technologies exist. A wealth of completely novel devices and such with dramatically improved properties based either on a single/few or a large density of quantum dots appears. Among them are single q-bit emitters, nano-flash memories, ultrafast lasers and amplifiers enabling a wealth of advanced systems.