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Showing papers on "Nanoelectronics published in 2022"


Journal ArticleDOI
01 Apr 2022
TL;DR: The recent key research progresses of 2D Janus transition metal dichalcogenide (TMD) monolayer have been summarized in this paper , including the fundamental properties and potential applications, and the existing challenges.
Abstract: The successful fabrication of Janus transition metal dichalcogenide (TMD) monolayer has sparked extensive research interests in various fields, such as nanoelectronics, optoelectronics, valleytronics, and catalysis. Janus TMDs can not only inherit the advantages of conventional TMDs but also produce novel properties which are different from their counterparts. The breaking of vertical mirror symmetry can induce a variety of novel properties, such as Rashba spin splitting, vertical piezoelectricity, and long exciton lifetime. Moreover, the intrinsic electric field that originates from the vertical asymmetry can serve as a superior platform for tuning the interlayer coupling when forming van der Waals structures. In this mini review, the recent key research progresses of 2D Janus TMDs, including the fundamental properties and potential applications, are briefly summarized, and the existing challenges are also presented.

26 citations


Journal ArticleDOI
TL;DR: In this paper , a controllable doping strategy in centimeter-sized monolayer MoS2 films is developed to address the critical issue and boost the device performance, which reveals the ultralow contact resistance and perfect Ohmic contact with metal electrodes.
Abstract: 2D semiconductors are emerging as plausible candidates for next‐generation “More‐than‐Moore” nanoelectronics to tackle the scaling challenge of transistors. Wafer‐scale 2D semiconductors, such as MoS2 and WS2, have been successfully synthesized recently; nevertheless, the absence of effective doping technology fundamentally results in energy barriers and high contact resistances at the metal–semiconductor interfaces, and thus restrict their practical applications. Herein, a controllable doping strategy in centimeter‐sized monolayer MoS2 films is developed to address this critical issue and boost the device performance. The ultralow contact resistance and perfect Ohmic contact with metal electrodes are uncovered in monolayer Fe‐doped MoS2, which deliver excellent device performance featured with ultrahigh electron mobility and outstanding on/off current ratio. Impurity scattering is suppressed significantly thanks to the ultralow electron effective mass and appropriate doping site. Particularly, unidirectionally aligned monolayer Fe‐doped MoS2 domains are prepared on 2 in. commercial c‐plane sapphire, suggesting the feasibility of synthesizing wafer‐scale 2D single‐crystal semiconductors with outstanding device performance. This work presents the potential of high‐performance monolayer transistors and enables further device downscaling and extension of Moore's law.

25 citations


Journal ArticleDOI
01 Feb 2022-iScience
TL;DR: In this paper , the authors proposed novel and scalable strategies to fabricate 2D vertical and lateral heterojunctions, consisting of semiconductors, metals, and/or semimetals.

23 citations


Journal ArticleDOI
TL;DR: In this paper , a review of recent developments of DNA nanotechnology related to its applications in nanoelectronics industry is presented, including DNA-based fabrication of nanostructures of metallic, dielectric, and semiconductor materials, and DNAbased lithographic patterning of Si, SiO2, metal, graphene, and polymer substrates.
Abstract: This review surveys recent developments of DNA nanotechnology related to its applications in nanoelectronics industry. The authors start with a brief introduction of DNA nanostructures, followed by a focused discussion of various DNA‐based fabrication approaches that are relevant to the semiconductor industry, including DNA‐based doping of semiconductor materials, DNA‐based fabrication of nanostructures of metallic, dielectric, and semiconductor materials, and DNA‐based lithographic patterning of Si, SiO2, metal, graphene, and polymer substrates. Examples of DNA‐templated fabrication of prototype nanoscale transistors and sensors are highlighted. Finally, major technical challenges facing the future applications of DNA nanotechnology in nanoelectronics and beyond are discussed.

20 citations




Journal ArticleDOI
TL;DR: In this paper , a review of the basic concepts of nanoscale self-assembly, its applications to date, and future outlook is provided, with a focus on the state-of-the-art and potential for more complex nanomaterial assemblies.
Abstract: Self-assembly offers unique possibilities for fabricating nanostructures, with different morphologies and properties, typically from vapour or liquid phase precursors. Molecular units, nanoparticles, biological molecules and other discrete elements can spontaneously organise or form via interactions at the nanoscale. Currently, nanoscale self-assembly finds applications in a wide variety of areas including carbon nanomaterials and semiconductor nanowires, semiconductor heterojunctions and superlattices, the deposition of quantum dots, drug delivery, such as mRNA-based vaccines, and modern integrated circuits and nanoelectronics, to name a few. Recent advancements in drug delivery, silicon nanoelectronics, lasers and nanotechnology in general, owing to nanoscale self-assembly, coupled with its versatility, simplicity and scalability, have highlighted its importance and potential for fabricating more complex nanostructures with advanced functionalities in the future. This review aims to provide readers with concise information about the basic concepts of nanoscale self-assembly, its applications to date, and future outlook. First, an overview of various self-assembly techniques such as vapour deposition, colloidal growth, molecular self-assembly and directed self-assembly/hybrid approaches are discussed. Applications in diverse fields involving specific examples of nanoscale self-assembly then highlight the state of the art and finally, the future outlook for nanoscale self-assembly and potential for more complex nanomaterial assemblies in the future as technological functionality increases.

17 citations


Journal ArticleDOI
TL;DR: In this paper , a homogenous and transparent photosensitive resin doped with an organic semiconductor material (OS), which is compatible with MPL process, is introduced to fabricate a variety of 3D OS composite microstructures (OSCMs) and microelectronic devices.
Abstract: In recent years, 3D printing of electronics have received growing attention due to their potential applications in emerging fields such as nanoelectronics and nanophotonics. Multiphoton lithography (MPL) is considered the state‐of‐the‐art amongst the microfabrication techniques with true 3D fabrication capability owing to its excellent level of spatial and temporal control. Here, a homogenous and transparent photosensitive resin doped with an organic semiconductor material (OS), which is compatible with MPL process, is introduced to fabricate a variety of 3D OS composite microstructures (OSCMs) and microelectronic devices. Inclusion of 0.5 wt% OS in the resin enhances the electrical conductivity of the composite polymer about 10 orders of magnitude and compared to other MPL‐based methods, the resultant OSCMs offer high specific electrical conductivity. As a model protein, laminin is incorporated into these OSCMs without a significant loss of activity. The OSCMs are biocompatible and support cell adhesion and growth. Glucose‐oxidase‐encapsulated OSCMs offer a highly sensitive glucose sensing platform with nearly tenfold higher sensitivity compared to previous glucose biosensors. In addition, this biosensor exhibits excellent specificity and high reproducibility. Overall, these results demonstrate the great potential of these novel MPL‐fabricated OSCM devices for a wide range of applications from flexible bioelectronics/biosensors, to nanoelectronics and organ‐on‐a‐chip devices.

16 citations


Journal ArticleDOI
TL;DR: In this paper , the preparation of centimeter-scale, crack-free, freestanding Hf 0.5Zr0.5O2 (HZO) nanomembranes that are well suited for investigating the local crystallographic phases, orientations and grain boundaries at both the microscopic and mesoscopic scales is reported.
Abstract: Hafnia‐based compounds have considerable potential for use in nanoelectronics due to their compatibility with complementary metal–oxide–semiconductor devices and robust ferroelectricity at nanoscale sizes. However, the unexpected ferroelectricity in this class of compounds often remains elusive due to the polymorphic nature of hafnia, as well as the lack of suitable methods for the characterization of the mixed/complex phases in hafnia thin films. Herein, the preparation of centimeter‐scale, crack‐free, freestanding Hf0.5Zr0.5O2 (HZO) nanomembranes that are well suited for investigating the local crystallographic phases, orientations, and grain boundaries at both the microscopic and mesoscopic scales is reported. Atomic‐level imaging of the plan‐view crystallographic patterns shows that more than 80% of the grains are the ferroelectric orthorhombic phase, and that the mean equivalent diameter of these grains is about 12.1 nm, with values ranging from 4 to 50 nm. Moreover, the ferroelectric orthorhombic phase is stable in substrate‐free HZO membranes, indicating that strain from the substrate is not responsible for maintaining the polar phase. It is also demonstrated that HZO capacitors prepared on flexible substrates are highly uniform, stable, and robust. These freestanding membranes provide a viable platform for the exploration of HZO polymorphic films with complex structures and pave the way to flexible nanoelectronics.

16 citations


Journal ArticleDOI
TL;DR: In this article , a review of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology, and engineering is presented, including the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronic and biotechnology.
Abstract: As the scaling technology in the silicon-based semiconductor industry is approaching physical limits, it is necessary to search for proper materials to be utilized as alternatives for nanoscale devices and technologies. On the other hand, carbon-related nanomaterials have attracted so much attention from a vast variety of research and industry groups due to the outstanding electrical, optical, mechanical and thermal characteristics. Such materials have been used in a variety of devices in microelectronics. In particular, graphene and carbon nanotubes are extraordinarily favorable substances in the literature. Hence, investigation of carbon-related nanomaterials and nanostructures in different ranges of applications in science, technology and engineering is mandatory. This paper reviews the basics, advantages, drawbacks and investigates the recent progress and advances of such materials in micro and nanoelectronics, optoelectronics and biotechnology.

16 citations


Journal ArticleDOI
TL;DR: In this article , a new air-stable 2D semiconductor with the unique puckered pentagonal low-symmetry structure was successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT).
Abstract: Pentagonal 2D materials as a new member in the 2D material family have attracted increasing attention due to the exotic physical properties originating from the unique Cairo pentagonal tiling topology. Herein, the penta‐PdPS atomic layers as a new air‐stable 2D semiconductor with the unique puckered pentagonal low‐symmetry structure are successfully exfoliated from bulk crystals grown via chemical vapor transport (CVT). Notably, 2D penta‐PdPS exhibits outstanding electronic and optoelectronic performance under 650 nm laser: high electron mobility of ≈208 cm2 V−1 s−1, an ultrahigh on/off ratio of ≈108, a high photoresponsivity of 5.2 × 104 A W−1, a high photogain of 1.0 × 105, an ultrahigh detectivity of 1.0 × 1013 Jones, respectively. Significantly, the exceptional puckered pentagonal atomic structure of 2D PdPS makes it strong in‐plane anisotropy in optical, electronic, and optoelectronic properties, demonstrating a sizeable anisotropic ratio of carrier mobility and photocurrent with the value of up to 3.9 and 2.3, respectively. These excellent properties make 2D Cairo Pentagonal PdPS a potential candidate in nanoelectronics, optoelectronics, polarized‐nanoelectronics, which will significantly promote the development of 2D materials.

Journal ArticleDOI
TL;DR: In this paper , the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH) were investigated.

Journal ArticleDOI
TL;DR: In this article , the authors present an update on nanotube functionalization, including an investigation of their methods and applications, as well as demonstrated applications of functionalized CNTs in nanoelectronics, composites, electrochemical energy storage, electrode materials, sensors and biomedicine.
Abstract: This review presents an update on nanotube functionalization, including an investigation of their methods and applications. The review starts with the discussion of microscopy and spectroscopy investigations of functionalized carbon nanotubes (CNTs). The results of transmission electron microscopy and scanning tunnelling microscopy, X-ray photoelectron spectroscopy, infrared spectroscopy, Raman spectroscopy and resistivity measurements are summarized. The update on the methods of the functionalization of CNTs, such as covalent and non-covalent modification or the substitution of carbon atoms, is presented. The demonstrated applications of functionalized CNTs in nanoelectronics, composites, electrochemical energy storage, electrode materials, sensors and biomedicine are discussed.

Journal ArticleDOI
TL;DR: In this paper , the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH) were investigated.

Journal ArticleDOI
TL;DR: In this paper , the remanent ferroelectric polarization at nanometric dimensions was arbitrarily set at the morphotropic phase boundary in ultrathin epitaxial PbZr0.52Ti0.48O3 films with a dense pattern of decoupled nanometric 180° domains.
Abstract: Ferroic order is characterized by hystereses with two remanent states and therefore inherently binary. The increasing interest in materials showing non-discrete responses, however, calls for a paradigm shift towards continuously tunable remanent ferroic states. Device integration for oxide nanoelectronics furthermore requires this tunability at the nanoscale. Here we demonstrate that we can arbitrarily set the remanent ferroelectric polarization at nanometric dimensions. We accomplish this in ultrathin epitaxial PbZr0.52Ti0.48O3 films featuring a dense pattern of decoupled nanometric 180° domains with a broad coercive-field distribution. This multilevel switching is achieved by driving the system towards the instability at the morphotropic phase boundary. The phase competition near this boundary in combination with epitaxial strain increases the responsiveness to external stimuli and unlocks new degrees of freedom to nano-control the polarization. We highlight the technological benefits of non-binary switching by demonstrating a quasi-continuous tunability of the non-linear optical response and of tunnel electroresistance.


Journal ArticleDOI
TL;DR: The scanning probe lithography (SPL) is a critical nanofabrication method with great potential to evolve into a disruptive atomic-scale fabrication technology to meet these demands as discussed by the authors .
Abstract: High-throughput and high-accuracy nanofabrication methods are required for the ever-increasing demand for nanoelectronics, high-density data storage devices, nanophotonics, quantum computing, molecular circuitry, and scaffolds in bioengineering used for cell proliferation applications. The scanning probe lithography (SPL) nanofabrication technique is a critical nanofabrication method with great potential to evolve into a disruptive atomic-scale fabrication technology to meet these demands. Through this timely review, we aspire to provide an overview of the SPL fabrication mechanism and the state-the-art research in this area, and detail the applications and characteristics of this technique, including the effects of thermal aspects and chemical aspects, and the influence of electric and magnetic fields in governing the mechanics of the functionalized tip interacting with the substrate during SPL. Alongside this, the review also sheds light on comparing various fabrication capabilities, throughput, and attainable resolution. Finally, the paper alludes to the fact that a majority of the reported literature suggests that SPL has yet to achieve its full commercial potential and is currently largely a laboratory-based nanofabrication technique used for prototyping of nanostructures and nanodevices.

Journal ArticleDOI
29 Jun 2022-Sensors
TL;DR: In this paper , a review of single-molecule surface-enhanced Raman spectroscopy (SM-SERS) has been presented, which has attracted the interest of various fields, including catalysis, nanoelectronics, and sensing.
Abstract: Single-molecule surface-enhanced Raman spectroscopy (SM-SERS) has the potential to detect single molecules in a non-invasive, label-free manner with high-throughput. SM-SERS can detect chemical information of single molecules without statistical averaging and has wide application in chemical analysis, nanoelectronics, biochemical sensing, etc. Recently, a series of unprecedented advances have been realized in science and application by SM-SERS, which has attracted the interest of various fields. In this review, we first elucidate the key concepts of SM-SERS, including enhancement factor (EF), spectral fluctuation, and experimental evidence of single-molecule events. Next, we systematically discuss advanced implementations of SM-SERS, including substrates with ultra-high EF and reproducibility, strategies to improve the probability of molecules being localized in hotspots, and nonmetallic and hybrid substrates. Then, several examples for the application of SM-SERS are proposed, including catalysis, nanoelectronics, and sensing. Finally, we summarize the challenges and future of SM-SERS. We hope this literature review will inspire the interest of researchers in more fields.

Journal ArticleDOI
TL;DR: In this article , a MoTe2-MoS2 van der Waals heterostructure photodetector was constructed using the mechanical exfoliation method and restack technique.
Abstract: Two-dimensional (2D) materials have got extensive attention for multifunctional device applications in advanced nanoelectronics and optoelectronics, such as field-effect transistors, photodiodes, and solar cells. In our work, we fabricated MoTe2–MoS2 van der Waals heterostructure photodetectors with great performance using the mechanical exfoliation method and restack technique. It is demonstrated that our MoTe2–MoS2 heterostructure photodetector device can operate without bias voltage, possessing a low dark current (10 pA) and high photocurrent on/off ratio (>104). Importantly, the room temperature photoresponsivity of the MoTe2–MoS2 photodetector can reach 110.6 and 9.2 mA W–1 under λ = 532 and 1064 nm incident laser powers, respectively. Our results indicate that the van der Waals heterostructure based on 2D semiconducting materials is expected to play an important role in nanoscale optoelectronic applications.

Journal ArticleDOI
TL;DR: This tutorial review provides a systematic summary of the critical factors-including crystal/substrate symmetry and energy consideration-necessary for synthesizing single-orientation 2D layers and focuses on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2Dlayer layers.
Abstract: Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors-including crystal/substrate symmetry and energy consideration-necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.

Journal ArticleDOI
TL;DR: In this article , a spin-polarized multiradical ground state of the biphenylene network (BPN) was predicted, which has important implications for the chemical reactivity of the 2D material under practical use conditions.
Abstract: Recent progress in the on-surface synthesis and characterization of nanomaterials is facilitating the realization of new carbon allotropes, such as nanoporous graphenes, graphynes, and 2D π-conjugated polymers. One of the latest examples is the biphenylene network (BPN), which was recently fabricated on gold and characterized with atomic precision. This gapless 2D organic material presents uncommon metallic conduction, which could help develop innovative carbon-based electronics. Here, using first principles calculations and quantum transport simulations, we provide new insights into some fundamental properties of BPN, which are key for its further technological exploitation. We predict that BPN hosts an unprecedented spin-polarized multiradical ground state, which has important implications for the chemical reactivity of the 2D material under practical use conditions. The associated electronic band gap is highly sensitive to perturbations, as seen in finite temperature (300 K) molecular dynamics simulations, but the multiradical character remains stable. Furthermore, BPN is found to host in-plane anisotropic (spin-polarized) electrical transport, rooted in its intrinsic structural features, which suggests potential device functionality of interest for both nanoelectronics and spintronics.


Journal ArticleDOI
TL;DR: In this article , the authors showed that when two anthanthrene monomers are π-stacked to form a dimer in a scanning tunneling microscopic break junction, the conductance increases by as much as 25 in comparison with a monomer, which originates from a room-temperature quantum interference.
Abstract: Stacking interactions are of significant importance in the fields of chemistry, biology, and material optoelectronics because they determine the efficiency of charge transfer between molecules and their quantum states. Previous studies have proven that when two monomers are π-stacked in series to form a dimer, the electrical conductance of the dimer is significantly lower than that of the monomer. Here, we present a strong opposite case that when two anthanthrene monomers are π-stacked to form a dimer in a scanning tunneling microscopic break junction, the conductance increases by as much as 25 in comparison with a monomer, which originates from a room-temperature quantum interference. Remarkably, both theory and experiment consistently reveal that this effect can be reversed by changing the connectivity of external electrodes to the monomer core. These results demonstrate that synthetic control of connectivity to molecular cores can be combined with stacking interactions between their π systems to modify and optimize charge transfer between molecules, opening up a wide variety of potential applications ranging from organic optoelectronics and photovoltaics to nanoelectronics and single-molecule electronics.


Journal ArticleDOI
01 Apr 2022-Carbon
TL;DR: Based on first-principles calculations, Wang et al. as mentioned in this paper proposed new 2D carbon allotropes obtained from the assembly of fenestrane molecule unit, named as four-penta-graphenes (fPG).

Journal ArticleDOI
TL;DR: In this article , a catalyst-free chemical vapor etching process was used to prepare highly dense and vertically aligned sub-5 nm silicon nanowires with length/diameter aspect ratios greater than 10,000.
Abstract: The need for miniaturized and high-performance devices has attracted enormous attention to the development of quantum silicon nanowires. However, the preparation of abundant quantities of silicon nanowires with the effective quantum-confined dimension remains challenging. Here, we prepare highly dense and vertically aligned sub-5 nm silicon nanowires with length/diameter aspect ratios greater than 10,000 by developing a catalyst-free chemical vapor etching process. We observe an unusual lattice reduction of up to 20% within ultra-narrow silicon nanowires and good oxidation stability in air compared to conventional silicon. Moreover, the material exhibits a direct optical bandgap of 4.16 eV and quasi-particle bandgap of 4.75 eV with the large exciton binding energy of 0.59 eV, indicating the significant phonon and electronic confinement. The results may provide an opportunity to investigate the chemistry and physics of highly confined silicon quantum nanostructures and may explore their potential uses in nanoelectronics, optoelectronics, and energy systems.


Journal ArticleDOI
TL;DR: In this article , a review of the development of soft chemical exfoliation, colloidal integration, and thin film applications of oxides, transition metal chalcogenides (TMDCs), and MXene nanosheets is presented.
Abstract: Two-dimensional (2D) nanomaterials constitute one of the most advanced research targets in materials science and engineering in this century. Among various methods for the synthesis of 2D nanomaterials, including top-down exfoliation and bottom-up crystal growth, chemical exfoliation has been widely used to yield monolayers of various layered compounds, such as clay minerals, transition metal chalcogenides (TMDCs), and oxides, long before the discovery of graphene. Soft chemical exfoliation is a technique to weaken the layer-to-layer interaction in layered compounds by chemical modification of interlayer galleries, which promotes monolayer exfoliation. The chemical exfoliation process using organic substances, typically amines, has been applied to a range of layered metal oxides and hydroxides for two decades, establishing high-yield exfoliation into their highly crystalline monolayers and colloidal integration processes have been developed to assemble the resultant 2D nanomaterials into well-organized nanoscale devices. Recently, such a strategy was found to be effective for TMDC and MXene nanosheets, expanding the lineup of functionalities of solution-processed 2D nanomaterial devices from dielectrics, optics, magnetics, and semiconductors to superconductors. Throughout this review, we share the historical research flow, recent progress, and prospects in the development of soft-chemical exfoliation, colloidal integration, and thin film applications of oxides, TMDC, and MXene nanosheets.

Journal ArticleDOI
TL;DR: In this article , the electronic properties and phonon dynamics of Cs2SnCl6 double perovskites have been investigated using first-principles calculations combined micro-Raman scattering and optical spectroscopy.

Journal ArticleDOI
TL;DR: In this article , the authors designed and implemented two new full adder circuits in QCA technology and then implemented ripple carry adder (RCA) circuits, which showed excellent performance in terms of QCA evaluation parameters, especially in cost and cost function.
Abstract: Due to the development of integrated circuits and the lack of responsiveness to existing technology, researchers are looking for an alternative technology. Quantum-dot cellular automata (QCA) technology is one of the promising alternatives due to its higher switch speed, lower power dissipation, and higher device density. One of the most important and widely used circuits in digital logic calculations is the full adder (FA) circuit, which actually creates the problem of finding its optimal design and increasing performance. In this paper, we designed and implemented two new FA circuits in QCA technology and then implemented ripple carry adder (RCA) circuits. The proposed FAs and RCAs showed excellent performance in terms of QCA evaluation parameters, especially in cost and cost function, compared to the other reported designs. The proposed adders’ approach was 46.43% more efficient than the best-known design, and the reason for this superiority was due to the coplanar form, without crossovers and inverter gates in the designs.