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Nanoelectronics
About: Nanoelectronics is a research topic. Over the lifetime, 3684 publications have been published within this topic receiving 156829 citations.
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TL;DR: This work demonstrates logic circuits with field-effect transistors based on single carbon nanotubes that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
Abstract: We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>10(5)), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
2,642 citations
TL;DR: In this article, the influence of source-drain contact thermal annealing and surface passivation on key transistor properties was examined, and it was shown that thermal annaling and passivation of oxide defects using chemical modification can increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V
Abstract: Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole and electron doping, and thus represent powerful building blocks for nanoelectronics devices such as field effect transistors. To explore the potential limits of silicon nanowire transistors, we have examined the influence of source-drain contact thermal annealing and surface passivation on key transistor properties. Thermal annealing and passivation of oxide defects using chemical modification were found to increase the average transconductance from 45 to 800 nS and average mobility from 30 to 560 cm 2 /V‚s with peak values of 2000 nS and 1350 cm 2 /V‚s, respectively. The comparison of these results and other key parameters with state-of-the-art planar silicon devices shows substantial advantages for silicon nanowires. The uses of nanowires as building blocks for future nanoelectronics are discussed.
2,157 citations
TL;DR: It is shown that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode.
Abstract: Miniaturization in electronics through improvements in established “top-down” fabrication techniques is approaching the point where fundamental issues are expected to limit the dramatic increases in computing seen over the past several decades Here we report a “bottom-up” approach in which functional device elements and element arrays have been assembled from solution through the use of electronically well-defined semiconductor nanowire building blocks We show that crossed nanowire p-n junctions and junction arrays can be assembled in over 95% yield with controllable electrical characteristics, and in addition, that these junctions can be used to create integrated nanoscale field-effect transistor arrays with nanowires as both the conducting channel and gate electrode Nanowire junction arrays have been configured as key OR, AND, and NOR logic-gate structures with substantial gain and have been used to implement basic computation
2,087 citations
TL;DR: This work reports on electron transport in quantum dot devices carved entirely from graphene, demonstrating the possibility of molecular-scale electronics based on graphene.
Abstract: The exceptional electronic properties of graphene, with its charge carriers mimicking relativistic quantum particles and its formidable potential in various applications, have ensured a rapid growth of interest in this new material. We report on electron transport in quantum dot devices carved entirely from graphene. At large sizes (>100 nanometers), they behave as conventional single-electron transistors, exhibiting periodic Coulomb blockade peaks. For quantum dots smaller than 100 nanometers, the peaks become strongly nonperiodic, indicating a major contribution of quantum confinement. Random peak spacing and its statistics are well described by the theory of chaotic neutrino billiards. Short constrictions of only a few nanometers in width remain conductive and reveal a confinement gap of up to 0.5 electron volt, demonstrating the possibility of molecular-scale electronics based on graphene.
2,032 citations
TL;DR: The optoelectronic properties of graphene are exploited to realize an ultrafast laser and pave the way to graphene-based photonics.
Abstract: Graphene is at the center of a significant research effort Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics Its electronic and mechanical properties are also ideal for micro- and nanomechanical systems, thin-film transistors, and transparent and conductive composites and electrodes Here we exploit the optoelectronic properties of graphene to realize an ultrafast laser A graphene-polymer composite is fabricated using wet-chemistry techniques Pauli blocking following intense illumination results in saturable absorption, independent of wavelength This is used to passively mode-lock an erbium-doped fiber laser working at 1559 nm, with a 524 nm spectral bandwidth and approximately 460 fs pulse duration, paving the way to graphene-based photonics
1,878 citations