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Nanoelectronics

About: Nanoelectronics is a research topic. Over the lifetime, 3684 publications have been published within this topic receiving 156829 citations.


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Journal ArticleDOI
05 Jul 2012-Nature
TL;DR: A successful alliance between nanoelectronics and nano-optics enables the development of active subwavelength-scale optics and a plethora of nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing, and strongly enhanced light–matter interactions for quantum devices and biosensing applications.
Abstract: The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes However, because photons do not possess charge, a way of controlling them efficiently by electrical means has so far proved elusive A promising way to achieve electric control of light could be through plasmon polaritons—coupled excitations of photons and charge carriers—in graphene In this two-dimensional sheet of carbon atoms, it is expected that plasmon polaritons and their associated optical fields can readily be tuned electrically by varying the graphene carrier density Although evidence of optical graphene plasmon resonances has recently been obtained spectroscopically, no experiments so far have directly resolved propagating plasmons in real space Here we launch and detect propagating optical plasmons in tapered graphene nanostructures using near-field scattering microscopy with infrared excitation light We provide real-space images of plasmon fields, and find that the extracted plasmon wavelength is very short—more than 40 times smaller than the wavelength of illumination We exploit this strong optical field confinement to turn a graphene nanostructure into a tunable resonant plasmonic cavity with extremely small mode volume The cavity resonance is controlled in situ by gating the graphene, and in particular, complete switching on and off of the plasmon modes is demonstrated, thus paving the way towards graphene-based optical transistors This successful alliance between nanoelectronics and nano-optics enables the development of active subwavelength-scale optics and a plethora of nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing, and strongly enhanced light–matter interactions for quantum devices and biosensing applications

1,845 citations

Journal ArticleDOI
TL;DR: With the discovery of hexagonal boron nitride as an ideal dielectric, the materials are now in place to advance integrated flexible nanoelectronics, which uniquely take advantage of the unmatched portfolio of properties of two-dimensional crystals, beyond the capability of conventional thin films for ubiquitous flexible systems.
Abstract: The unique electrical, mechanical and physical properties of two-dimensional materials make them attractive candidates in flexible nanoelectronic systems. Here Akinwande et al. review the literature on two-dimensional materials in flexible nanoelectronics, and highlight barriers to their full implementation.

1,575 citations

Journal ArticleDOI
TL;DR: This review presents a brief summary of bottom-up and hybrid bottom- up/top-down strategies for nanoelectronics with an emphasis on memories based on the crossbar motif, including experimental demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers.
Abstract: Electronics obtained through the bottom-up approach of molecular-level control of material composition and structure may lead to devices and fabrication strategies not possible with top-down methods. This review presents a brief summary of bottom-up and hybrid bottom-up/top-down strategies for nanoelectronics with an emphasis on memories based on the crossbar motif. First, we will discuss representative electromechanical and resistance-change memory devices based on carbon nanotube and core-shell nanowire structures, respectively. These device structures show robust switching, promising performance metrics and the potential for terabit-scale density. Second, we will review architectures being developed for circuit-level integration, hybrid crossbar/CMOS circuits and array-based systems, including experimental demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers. Finally, bottom-up fabrication approaches, including the opportunity for assembly of three-dimensional, vertically integrated multifunctional circuits, will be critically discussed.

1,537 citations

Journal ArticleDOI
Jie Xiang1, Wei Lu1, Yongjie Hu1, Yue Wu1, Hao Yan1, Charles M. Lieber1 
25 May 2006-Nature
TL;DR: Comparison of the intrinsic switching delay, τ = CV/I, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFets.
Abstract: Field-effect transistors (FETs) based on semi-conductor nanowires could one day replace standard silicon MOSFETs in miniature electronic circuits. MOSFETs, or metal-oxide semiconductor field-effect transistors, are a type of transistor used for high-speed switching and in a computer's integrated circuits. A specially designed nanowire with a germanium shell and silicon core has shown promise as a nanometre-scale field-effect transistor: it has a near-perfect channel for electronic conduction. Now, in transistor configuration, this germanium/silicon nanowire is shown to have properties including high conductance and short switching time delay that are better than state-of-the-art silicon MOSFETs. In a transistor configuration, a new germanium/silicon nanowire has characteristics such as conductance, on-current and switching time delay that are better than those of state-of-the-art silicon metal-oxide-semiconductor field-effect transitors. Semiconducting carbon nanotubes1,2 and nanowires3 are potential alternatives to planar metal-oxide-semiconductor field-effect transistors (MOSFETs)4 owing, for example, to their unique electronic structure and reduced carrier scattering caused by one-dimensional quantum confinement effects1,5. Studies have demonstrated long carrier mean free paths at room temperature in both carbon nanotubes1,6 and Ge/Si core/shell nanowires7. In the case of carbon nanotube FETs, devices have been fabricated that work close to the ballistic limit8. Applications of high-performance carbon nanotube FETs have been hindered, however, by difficulties in producing uniform semiconducting nanotubes, a factor not limiting nanowires, which have been prepared with reproducible electronic properties in high yield as required for large-scale integrated systems3,9,10. Yet whether nanowire field-effect transistors (NWFETs) can indeed outperform their planar counterparts is still unclear4. Here we report studies on Ge/Si core/shell nanowire heterostructures configured as FETs using high-κ dielectrics in a top-gate geometry. The clean one-dimensional hole-gas in the Ge/Si nanowire heterostructures7 and enhanced gate coupling with high-κ dielectrics give high-performance FETs values of the scaled transconductance (3.3 mS µm-1) and on-current (2.1 mA µm-1) that are three to four times greater than state-of-the-art MOSFETs and are the highest obtained on NWFETs. Furthermore, comparison of the intrinsic switching delay, τ = CV/I, which represents a key metric for device applications4,11, shows that the performance of Ge/Si NWFETs is comparable to similar length carbon nanotube FETs and substantially exceeds the length-dependent scaling of planar silicon MOSFETs.

1,454 citations

Journal ArticleDOI
TL;DR: In this article, the authors report on electrical transport measurements on MoS2 FETs in different dielectric configurations and show clear evidence of the strong suppression of charge impurity scattering in dual-gate devices with a top-gate Dielectric together with phonon scattering that shows a weaker than expected temperature dependence.
Abstract: Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising insulators and channel materials for field-effect transistors (FETs). The presence of a direct band gap in monolayer MoS2 due to quantum mechanical confinement, allows room-temperature field-effect transistors with an on/off ratio exceeding 108. The presence of high-k dielectrics in these devices enhanced their mobility, but the mechanisms are not well understood. Here, we report on electrical transport measurements on MoS2 FETs in different dielectric configurations. Mobility dependence on temperature shows clear evidence of the strong suppression of charge impurity scattering in dual-gate devices with a top-gate dielectric together with phonon scattering that shows a weaker than expected temperature dependence. High levels of doping achieved in dual-gate devices also allow the observation of a metal-insulator transition in monolayer MoS2. Our work opens up the way to further improvements in 2D semiconductor performance and introduces MoS2 as an interesting system for studying correlation effects in mesoscopic systems.

1,308 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023115
2022248
2021107
2020115
2019127
2018152