Nanoelectronics

About: Nanoelectronics is a research topic. Over the lifetime, 3684 publications have been published within this topic receiving 156829 citations.

Nanoscale thermal transport. II. 2003–2012

Abstract: A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interface...

Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

Abstract: Graphene is considered to be a promising candidate for future nanoelectronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect transistors (FETs) cannot be turned off effectively due to the absence of a band gap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a band gap up to a few hundred millielectronvolts can be created by the perpendicular E-field in bilayer graphenes. Although previous carrier transport measurements in bilayer graphene transistors did indicate a gate-induced insulating state at temperatures below 1 K, the electrical (or transport) band gap was estimated to be a few millielectronvolts, and the room temperature on/off current ratio in bilayer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively, in our dual-gate bilayer graphene FETs. We also measured an electrical band gap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V nm(-1), respectively. This demonstration reveals the great potential of bilayer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.

Single-walled carbon nanotube electronics

Abstract: Single-walled carbon nanotubes (SWNTs) have emerged as a very promising new class of electronic materials. The fabrication and electronic properties of devices based on individual SWNTs are reviewed. Both metallic and semiconducting SWNTs are found to possess electrical characteristics that compare favorably to the best electronic materials available. Manufacturability issues, however, remain a major challenge.

Rotational actuators based on carbon nanotubes

Abstract: Nanostructures are of great interest not only for their basic scientific richness, but also because they have the potential to revolutionize critical technologies. The miniaturization of electronic devices over the past century has profoundly affected human communication, computation, manufacturing and transportation systems. True molecular-scale electronic devices are now emerging that set the stage for future integrated nanoelectronics. Recently, there have been dramatic parallel advances in the miniaturization of mechanical and electromechanical devices. Commercial microelectromechanical systems now reach the submillimetre to micrometre size scale, and there is intense interest in the creation of next-generation synthetic nanometre-scale electromechanical systems. We report on the construction and successful operation of a fully synthetic nanoscale electromechanical actuator incorporating a rotatable metal plate, with a multi-walled carbon nanotube serving as the key motion-enabling element.

Measurements of near-ultimate strength for multiwalled carbon nanotubes and irradiation-induced crosslinking improvements.

Abstract: The excellent mechanical properties of carbon nanotubes are being exploited in a growing number of applications from ballistic armour to nanoelectronics. However, measurements of these properties have not achieved the values predicted by theory due to a combination of artifacts introduced during sample preparation and inadequate measurements. Here we report multiwalled carbon nanotubes with a mean fracture strength >100 GPa, which exceeds earlier observations by a factor of approximately three. These results are in excellent agreement with quantum-mechanical estimates for nanotubes containing only an occasional vacancy defect, and are ∼80% of the values expected for defect-free tubes. This performance is made possible by omitting chemical treatments from the sample preparation process, thus avoiding the formation of defects. High-resolution imaging was used to directly determine the number of fractured shells and the chirality of the outer shell. Electron irradiation at 200 keV for 10, 100 and 1,800 s led to improvements in the maximum sustainable loads by factors of 2.4, 7.9 and 11.6 compared with non-irradiated samples of similar diameter. This effect is attributed to crosslinking between the shells. Computer simulations also illustrate the effects of various irradiation-induced crosslinking defects on load sharing between the shells. The mechanical properties of carbon nanotubes rarely match the values predicted by theory owing to a combination of artefacts introduced during sample preparation and inadequate measurements. However, by avoiding chemical treatments and using high-resolution imaging, it is possible to obtain values of the mean fracture strength that exceed previous values by approximately a factor of three.