Negative impedance converter

About: Negative impedance converter is a research topic. Over the lifetime, 5801 publications have been published within this topic receiving 87636 citations.

Multilevel converter and method of starting up a multilevel converter

Abstract: A multilevel converter for converting between an AC voltage and a DC voltage and a method of starting up such multilevel converter are provided. The multilevel converter has an AC terminal and a DC terminal for connecting the multilevel converter to either an AC power source or a DC power source, respectively, which supplies the voltage to be converted. The multilevel converter further comprises at least one converter leg, the DC terminal comprising a first and a second DC terminal, the converter leg comprising plural converter cells connected in series between the first and second DC terminals. The AC terminal of the multilevel converter is electrically coupled to an electrical link between two of said converter cells of said converter leg.

The Cross-Coupled Pair?Part III [A Circuit for All Seasons]

Abstract: In this article, we study applications of the cross-coupled pair (XCP) in analog and RF circuits The XCP can serve as a negative resistance or a negative impedance converter in small-signal operation, or a regenerative circuit in large-signal operation

Dc-dc converter with current control

Abstract: A direct current voltage converter includes a substantially static direct current voltage source (210), an inductor (220); a current-control switch (215) coupled with, and between, the voltage source (210) and the inductor, (220) a step-up switch (230) coupled with the inductor (220), and a current sense device (235) coupled in series with the step-up switch (230) and electrical ground The converter also includes a capacitor (260) for storing converted voltage that is coupled with, and between, electrical ground, and the inductor (220) and the step-up switch (230) through a device (240) for controlling current flow direction The converter further includes a first control circuit (219), which opens and closes the current-control switch based, at least in part, on an electrical current conducted through the current sense device (235), and a second control circuit (250), which opens and closes the step-up switch (230) based, on a voltage potential across the electrical load (270)

Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors

Abstract: The electrical characteristics of surrounding-gate (SG) metal-ferroelectric-semiconductor (MFS) field-effect transistors (FETs) were theoretically investigated by considering the ferroelectric negative capacitance (NC) effect. The derived results demonstrated that the NC-SG-MFS-FET displays superior electrical properties compared with that of the traditional SG-MIS-FET, in terms of better electrostatic control of the gate electrode over the channel, smaller subthreshold swing (S < 60 mV/dec), and bigger value of ION. It is expected that this investigation may provide some insight into the design and performance improvement for the fast switching and low power dissipation applications of ferroelectric FETs.

Influence of Body Effect on Sample-and-Hold Circuit Design Using Negative Capacitance FET

Abstract: Negative capacitance FET (NCFET) has become a research topic of interest in recent years due to its interesting properties. It has the ability to retain the polarization state even in the absence of electric field. By virtue of this ability, it can be designed as a nonvolatile memory. NCFET can also be configured as a steep-slope switch and thereby providing energy efficiency while used in digital designs. However, the benefits offered by NCFETs for analog circuit domain has not well reported. In this paper, we analyze the impact of body effect on an NCFET-based bootstrapped switch and illustrate that the linearity of NCFET-based switch can be improved resulting from the internal amplification of the employed NCFET. When designed at 0.6-V supply ( ${V}_{\text {dd}}$ ), results show that the variation of the on resistance of the bootstrapped switch is about $67~\Omega $ during the sampling period, which is one-third smaller than the MOSFET-based switch. As a result, the sampling linearity is improved and the distortion at the output can be decreased. On condition that the Nyquist input frequency is 10 MHz, the proposed NCFET-based bootstrapped switch succeeds in improving the total harmonic distortion performance by 16.7 dB, compared with that of a conventional MOSFET-based bootstrapped switch.