Topic
Negative impedance converter
About: Negative impedance converter is a research topic. Over the lifetime, 5801 publications have been published within this topic receiving 87636 citations.
Papers published on a yearly basis
Papers
More filters
••
01 Sep 2017
TL;DR: For the first time, a non-hysteretic switch configuration is achieved in fabricated MOSFETs, suitable for analog and digital applications, for which a reduction in the subthreshold swing is obtained down to 20mV/dec.
Abstract: This work experimentally demonstrates negative capacitance MOSFETs in hysteretic and non-hysteretic modes of operation. A PZT capacitor is externally connected to the gate of commercial nMOSFETs fabricated in 28nm CMOS technology to explore the negative capacitance effect. In hysteretic devices, subthreshold slope as steep as 10mV/dec is achieved in the region where the ferroelectric represents an S-shape polarization. In addition, a matching condition is achieved between a PZT capacitor and the gate capacitance of MOSFETs fabricated on SOI substrates. For the first time, we achieve a non-hysteretic switch configuration in our fabricated MOSFETs, suitable for analog and digital applications, for which a reduction in the subthreshold swing is obtained down to 20mV/dec.
29 citations
•
TL;DR: An interleaved soft-switching buck converter with coupled inductors to extend duty ratio for high step-down voltage applications and a single-capacitor turn-off snubber is introduced to limit rising rate of active switches to reduce turn- off loss.
Abstract: This paper presents an interleaved soft-switching buck converter with coupled inductors to extend duty ratio for high step-down voltage applications. In the proposed converter, a single-capacitor turn-off snubber is introduced to limit voltage rising rate of active switches to reduce turn-off loss. To handle the energy trapped in the leakage inductance of the coupled inductors, simple passive-clamp circuits are added to the proposed converter, which can effectively recycle the energy and suppress voltage spike. To highlight the merits of the proposed converter, its performance indexes, such as voltage gain function and component stresses, are analyzed and compared with those of the conventional interleaved buck converter. In this study, a prototype of the proposed converter, of which input voltage range is 127-177 Vdc, output voltage is 12 Vdc, and power capacity rates at 240 W, has been designed and implemented to verify the feasibility. From experimental results, it has been shown that conversion efficiency up to 85% can be achieved at full load condition.
28 citations
••
03 Aug 2010TL;DR: The proposed voltage regulator is a hybrid combination of a switching DC-DC voltage converter and a low-dropout regulator exploiting active circuitry rather than bulky passive devices within the filter structure.
Abstract: A hybrid voltage regulator module for an on-chip DC-DC voltage converter is proposed in this paper. The circuit is appropriate for point-of-load voltage regulation due to an ultra area efficient architecture. The proposed voltage regulator is a hybrid combination of a switching DC-DC voltage converter and a low-dropout regulator exploiting active circuitry rather than bulky passive devices within the filter structure. The proposed circuit can supply over 100 mA current while generating 0.9 volts from a 1.2 input voltage, exhibiting a high current efficiency of greater than 99%. The on-chip area is 0.026 mm2 which is 500 times smaller than a monolithic buck converter and four times smaller than an LDO. The proposed regulator provides a means for distributing multiple local power supplies across an integrated circuit while providing high current efficiency.
28 citations
••
TL;DR: In this article, the operating voltage of a nanoelectromechanical (NEM) relay can be scaled down significantly using negative capacitance (NC), which is a unique property of ferroelectric materials.
Abstract: The operating voltage of a nanoelectromechanical (NEM) relay can be scaled down significantly using negative capacitance (NC), which is a unique property of ferroelectric materials. It has been observed that a ferroelectric capacitor can amplify the internal voltage of a device (higher than the externally applied voltage) by means of the NC effect. In this simulation work, depending on the structural parameters of a ferroelectric capacitor and an NEM relay, an NC + NEM relay (in which the gate electrode of the NEM relay is connected in series to the ferroelectric capacitor) was investigated. As a result, a sub-0.5-V operating voltage is theoretically estimated.
28 citations
••
01 Sep 2016TL;DR: In this paper, a physics-based model for negative capacitance (NC) FinFETs by coupling the Landau-Khalatnikov model of ferroelctric materials with the standard BSIM-CMG model was developed.
Abstract: We have developed a physics based model for negative capacitance (NC) FinFETs by coupling the Landau-Khalatnikov model of ferroelctric materials with the standard BSIM-CMG model of FinFET We apply our model to thin film Y-HfO 2 (yttrium-doped hafnium oxide) based NC-FinFETs designed using state of the art 22nm technology node FinFETs Using the same ferroelectric material, we demonstrate a device design that can match the I ON of the 22nm technology node at 50% reduced V DD with a simultaneous I OFF improvement of ≈ 83% Further, we analyze the impact of variation of ferroelectric properties, remnant polarization (P r ) and coercive electric field (E c ) on the device figures of merit which can lay a very useful guideline towards investigation of new ferroelectric materials for NC-FinFET We investigate the impact of scaling the ferroelectric thickness on the electrical characteristics of NC-FinFET We critically examine an interesting phenomenon of “negative DIBL” which leads to reduced off-current (I OFF ), increased threshold voltage (V th ), yet increased on-current (I ON ) at higher drain biases This effect gets pronounced with increasing ferroelectric thickness Finally, we compare the logic figures of merit of the NC-FinFET with those of the reference FinFET
28 citations