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Negative impedance converter

About: Negative impedance converter is a research topic. Over the lifetime, 5801 publications have been published within this topic receiving 87636 citations.


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Patent
08 May 1978
TL;DR: In this article, the effect of the inherent transducer capacitance in a transducers-coupled electromechanical system with vibrational movement was investigated, where electrical circuitry is coupled across the transducers output to provide a negative capacitance having a magnitude substantially the same as that of the original transducers' capacitance.
Abstract: Arrangements are disclosed for substantially reducing the effect of the inherent transducer capacitance in a transducer-coupled electromechanical system which is subject to vibrational movement. Electrical circuitry is coupled across the transducer output to provide a negative capacitance having a magnitude substantially the same as that of the inherent transducer capacitance, thereby substantially nullifying the inherent transducer capacitance and enabling improved damping (including low-noise damping) to be achieved.

67 citations

Journal ArticleDOI
TL;DR: In this paper, the stability of the middle branch of the double-barrier resonanttunneling diode in a circuit with effectively negative capacitance and negative resistance is derived in a simple way.
Abstract: Electronic devices exhibiting bistability in the current‐voltage characteristics are considered from a unified viewpoint. We obtain simple relations for the stability of the different branches in the current‐voltage characteristics. Criteria for oscillatory instabilities are discussed, and special conclusions for elements with S‐ or Z‐shaped characteristics are drawn. The stabilization of the middle branch of the double‐barrier resonant‐tunneling diode in a circuit with effectively negative capacitance and negative resistance is derived in a simple way.

67 citations

Journal ArticleDOI
TL;DR: It is shown here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing ferroelectric materials as FET dielectrics as well as highly nonlinear biasing behavior in a series stack.
Abstract: We show here, using fundamental energy storage relationships for capacitors, that there are severe constraints upon what can be realized utilizing ferroelectric materials as FET dielectrics. A basic equation governing all small signal behavior is derived, a negative capacitance quality factor is defined based upon it, and thousands of carefully measured devices are evaluated. We show that no instance of negative capacitance occurs within our huge database. Furthermore, we demonstrate that highly nonlinear biasing behavior in a series stack could be misinterpreted as giving a negative capacitance.

67 citations

Patent
Hiroyuki Shoji1, Akihiko Kanouda1, Ryuichi Saito1, Seigou Yukutake1, Katsuhiro Higuchi1 
18 Aug 2005
TL;DR: In this paper, a voltage clamp circuit composed of a series unit of switching devices with a reverse parallel diode and a clamp condenser is connected to prevent a reduction in a circulating current at buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization.
Abstract: The DC-DC converter connects a first and a second switching circuit for converting power mutually between direct current and alternating current respectively to a first DC power source and a second DC power source and has a transformer between the AC terminals thereof Here, between the AC terminals of the second switching circuit and the negative pole terminal of the DC power source, a voltage clamp circuit composed of a series unit of switching devices with a reverse parallel diode and a clamp condenser is connected An isolated bidirectional DC-DC converter which prevents a reduction in a circulating current at time of buck and an occurrence of a surge voltage at time of voltage boost and realizes highly efficiency, low noise, and miniaturization is provided

66 citations

Journal ArticleDOI
TL;DR: In this paper, a voltage generator for gigascale DRAM's with a negative word-line scheme is described, which combines a charge-pump regulator and a series-pass regulator, and also includes a positive and negative offset voltage generator that uses a bandgap generator with a differential amplifier.
Abstract: A precise on-chip voltage generator for gigascale DRAM's with a negative word-line scheme is described. It combines a charge-pump regulator and a series-pass regulator, and it also includes a positive and negative offset voltage generator that uses a bandgap generator with a differential amplifier. The proposed circuit was experimentally evaluated with a test device fabricated using a 0.3-/spl mu/m process. The simulation results show that the series-pass regulator suppresses the noise on a word-line low voltage (negative) to below 30 mV for the word-line transient and V/sub BB/ bouncing. A dc-voltage error of less than 6% without trimming is confirmed for the positive and negative offset voltage generator through the test device. These results show that the described scheme can be used in future low-voltage gigascale DRAM's.

66 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202330
2022104
2021120
2020131
2019134
2018155