Negative impedance converter

About: Negative impedance converter is a research topic. Over the lifetime, 5801 publications have been published within this topic receiving 87636 citations.

An anti-ferroelectric gated Landau transistor to achieve sub-60 mV/dec switching at low voltage and high speed

Abstract: Landau field effect transistors promise to lower the power-dissipation of integrated circuits (ICs) by reducing the subthreshold swing (S) below the Boltzmann limit of 60 mV/dec. The key idea is to replace the classical gate insulator with dielectrics that exhibit negative capacitance (NC) associated with double-well energy landscape, for example, ferroelectrics (FE), air-gap capacitors, or a combination thereof. Indeed, S is dramatically reduced, constrained only by the limits of hysteresis-free operation. Unfortunately, the following limitations apply (i) the need for capacitance matching constrains steep S only to the small subthreshold region for FE based negative capacitance field effect transistor (NCFET) and requires an insulator too thick for sub-20 nm scaling; (ii) the kinetics of mechanical switching for airgap based NCFET obviate high-speed operation; and (iii) the lattice mismatch between the substrate and the dielectric makes defect-free integration difficult. In this article, we demonstrate ...

Switching converter with open-loop primary side regulation

Abstract: The isolated, multiple output, switching converter is created with a number of unique performance characteristics. The converter operates in continuous inductor current mode (CICM) of operation for all load currents from no load to full load on all outputs despite the presence of simple rectifier diodes only on the converter secondary sides. The regulation of output voltages on all outputs against the changes of the input voltage is provided by use of a simple open-loop control circuit connected to the primary side and thus eliminating the need for isolation in the control circuit. The regulation against the load current changes in the single output case is also provided on the primary side by a load current sensing circuit. An additional benefit of the switching converter is in the elimination of the losses and voltage overshoots associated with the leakage inductance of the isolation transformer when operated as pulse width modulated (PWM) converter.

Method and apparatus for recovery from low impedance condition during cathodic arc processes

Abstract: Techniques for recovery from a low impedance conditions during cathodic arc or electric vapor thin film processes are disclosed. Sensing of a low impedance condition is achieved followed automatically by active clearing of the cloud to return it to the proper impedance or resistance state. Active clearing is accomplished by a progressive increase in the output of bias voltage supply. Regulation of the bias voltage supply switches between voltage or power modes and a current mode of regulation. Circuitry disclosed is designed to readily modify existing power supplies to achieve the methods discussed and to linearly increase the current output by it.

Band-gap reference voltage generator

Abstract: A band-gap reference voltage generator includes a first reference current generator, a second reference current generator, and a reference voltage generator. The first reference current generator includes: a driver generating a first reference current in response to a first voltage signal generated by comparison of the unique voltage and the thermal voltage. The second reference current generator includes a driver generating a second reference current in response to a second voltage signal generated by comparison of a division voltage of a power-supply voltage and the unique voltage. The reference voltage generator includes a driver forming current mirrors in association with each of the first reference current generator and the second reference current generator, respectively, and generating a third reference current and a fourth reference current via the formed current mirrors, and a current-voltage converter converting the sum of the third reference current and the fourth reference current into a reference voltage, and outputting the reference voltage.

Semiconductor memory operating with low supply voltage

Abstract: The present invention is intended to operate a semiconductor device at high speed with low voltage. A circuit configuration is used in which the transfer impedance between a common I/O line and a data line is changed depending on whether information is to be read or written. A current/voltage converter is provided which includes a MISFET different in conduction type to a select MISFET. Thus, the speed of reading information is increased. An intermediate voltage generator having high driving capability is provided. Thus, the circuit has sufficient driving capability for an LSI having large load capacitance. A voltage converter is provided which converts a data line supply voltage or word line supply voltage to a higher voltage. Therefore, stabilized signal transmission is ensured.