Nickel

About: Nickel is a research topic. Over the lifetime, 79308 publications have been published within this topic receiving 1210058 citations. The topic is also known as: Ni & element 28.

A new type of protective surface layer for high-capacity Ni-based cathode materials: nanoscaled surface pillaring layer.

Abstract: A solid solution series of lithium nickel metal oxides, Li[Ni1–xMx]O2 (with M = Co, Mn, and Al) have been investigated intensively to enhance the inherent structural instability of LiNiO2. However, when a voltage range of Ni-based cathode materials was increased up to >4.5 V, phase transitions occurring above 4.3 V resulted in accelerated formation of the trigonal phase (P3m1) and NiO phases, leading to and pulverization of the cathode during cycling at 60 °C. In an attempt to overcome these problems, LiNi0.62Co0.14Mn0.24O2 cathode material with pillar layers in which Ni2+ ions were resided in Li slabs near the surface having a thickness of ∼10 nm was prepared using a polyvinylpyrrolidone (PVP) functionalized Mn precursor coating on Ni0.7Co0.15Mn0.15(OH)2. We confirmed the formation of a pillar layer via various analysis methods (XPS, HRTEM, and STEM). This material showed excellent structural stability due to a pillar layer, corresponding to 85% capacity retention between 3.0 and 4.5 V at 60 °C after 10...

Dye-sensitized solar cells with NiS counter electrodes electrodeposited by a potential reversal technique

Abstract: Nickel sulfides have been, for the first time, electrodeposited on transparent conductive glass by a facile periodic potential reversal (PR) technique to supersede Pt counter electrodes (CEs) of dye-sensitized solar cells (DSCs). The composition and electrochemical catalytic activity of the nickel sulfide films prepared by PR technique are different from those of the ones deposited by the commonly used potentiostatic (PS) technique. PR technique produces transparent single-component NiS, while co-deposition of Ni and NiS is found in the opaque films prepared by PS method. The nickel sulfide deposited by PR technique shows high catalytic activity for the reduction of I3− to I− in a DSC. DSC with the CE deposited by PR technique performs much better (6.82%) than that by PS method (3.22%), and is comparable to the device with conventional Pt coated CE (7.00%).

Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure

Abstract: Understanding the chemical vapor deposition (CVD) kinetics of graphene growth is important for advancing graphene processing and achieving better control of graphene thickness and properties. In the perspective of improving large area graphene quality, we have investigated in real-time the CVD kinetics using CH4–H2 precursors on both polycrystalline copper and nickel. We highlighted the role of hydrogen in differentiating the growth kinetics and thickness of graphene on copper and nickel. Specifically, the growth kinetics and mechanism is framed in the competitive dissociative chemisorption of H2 and dehydrogenating chemisorption of CH4, and in the competition of the in-diffusion of carbon and hydrogen, being hydrogen in-diffusion faster in copper than nickel, while carbon diffusion is faster in nickel than copper. It is shown that hydrogen acts as an inhibitor for the CH4 dehydrogenation on copper, contributing to suppress deposition onto the copper substrate, and degrades quality of graphene. Additionally, the evidence of the role of hydrogen in forming C–H out of plane defects in CVD graphene on Cu is also provided. Conversely, resurfacing recombination of hydrogen aids CH4 decomposition in the case of Ni. Understanding better and providing other elements to the kinetics of graphene growth is helpful to define the optimal CH4/H2 ratio, which ultimately can contribute to improve graphene layer thickness uniformity even on polycrystalline substrates.