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NQS

About: NQS is a research topic. Over the lifetime, 337 publications have been published within this topic receiving 4226 citations.


Papers
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Journal ArticleDOI
TL;DR: A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.
Abstract: This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.

314 citations

Journal ArticleDOI
TL;DR: In this paper, a charge-based model of the intrinsic part of the MOS transistor is presented, which is based on the forward and reverse charges q/sub f/ defined as the mobile charge densities, evaluated at the source and at the drain.
Abstract: This paper presents an overview of MOS transistor modeling for RF integrated circuit design. It starts with the description of a physical equivalent circuit that can easily be implemented as a SPICE subcircuit. The MOS transistor is divided into an intrinsic part, representing mainly the active part of the device, and an extrinsic part responsible for most of the parasitic elements. A complete charge-based model of the intrinsic part is presented. The main advantage of this new charge-based model is to provide a simple and coherent description of the DC, AC, nonquasi-static (NQS), and noise behavior of the intrinsic MOS that is valid in all regions of operation. It is based on the forward and reverse charges q/sub f/ and q/sub r/ defined as the mobile charge densities, evaluated at the source and at the drain. This intrinsic model also includes a new simplified NQS model that uses a bias and frequency normalization allowing one to describe the high-order frequency behavior with only two simple functions. The extrinsic model includes all the terminal access series resistances, and particularly the gate resistance, the overlap, and junction capacitances as well as a substrate network. The latter is required to account for the signal coupling occurring at RF from the drain to the source and the bulk, through the junction capacitances. The noise model is then presented, including the effect of the substrate resistances on the RF noise parameters. All the aspects of the model are validated for a 0.25-/spl mu/m CMOS process.

194 citations

Book
10 Apr 2013
TL;DR: The BSIM3v3 Model Implementation as discussed by the authors is based on the I-V model and the threshold voltage model, which is used in modern MOSFETs to evaluate the physical properties of the MOSFLETs.
Abstract: Preface. 1. Introduction. 2. Significant Physical Effects In Modern MOSFETs. 3. Threshold Voltage Model. 4. I-V Model. 5. Capacitance Model. 6. Substrate Current Model. 7. Noise Model. 8. Source/Drain Parasitics Model. 9. Temperature Dependence Model. 10. Non-quasi Static (NQS) Model. 11. BSIM3v3 Model Implementation. 12. Model Testing. 13. Model Parameter Extraction. 14. RF and Other Compact Model Applications. Appendices. Index.

193 citations

Proceedings ArticleDOI
01 Dec 1998
TL;DR: In this paper, a physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices.
Abstract: A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices. The accuracy of the model is validated with 2D simulations and experimental data. In addition, the effect of the gate resistance on the device noise behavior has been studied with measured data. The result shows that an accurate gate resistance model is essential for the noise modeling.

171 citations

Journal ArticleDOI
TL;DR: An original scheme is presented, which allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFETs by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method.
Abstract: The maturation of low-cost silicon-on-insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static (NQS) small-signal model for MOSFETs. The extracted model is shown to be valid up to 40 GHz.

138 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20221
202114
20208
201912
20185
201715