scispace - formally typeset
Search or ask a question

Showing papers on "NQS published in 1985"


Patent
28 Feb 1985
TL;DR: In this paper, an enhancement type MOS transistor and 1st depression type mOS transistor are connected in series across the power voltage, and a 2nd depression type Mos transistor and resistance component connected are in series with respect to the same power voltage.
Abstract: Semiconductor circuit of MOS transistors for generation of the desired reference voltage over a wide range with almost no dependence on the power voltage. An enhancement type MOS transistor and 1st depression type MOS transistor are connected in series across the power voltage, and a 2nd depression type MOS transistor and resistance component connected are in series across the power voltage. The above 1st depression type MOS transistor is connected to the gate of the 2nd depression type MOS transistor, and the reference voltage is derived from the connection point of the 2nd depression type MOS transistor and the resistance component.

14 citations


Journal ArticleDOI
TL;DR: In this paper, a modification to the well-established non-quaternary suppression pulse sequence used in high-resolution solid-state NMR is proposed which allows the inclusion of a "flip-back" pulse.
Abstract: A modification to the well-established non-quaternary suppression pulse sequence used in high-resolution solid-state NMR is proposed which allows the inclusion of a ‘flip-back’ pulse. The utility of such a sequence is demonstrated by spectra obtained using the standard and modified NQS sequences for a glycidyl ether derivative.

8 citations