NQS

About: NQS is a research topic. Over the lifetime, 337 publications have been published within this topic receiving 4226 citations.

Accurate and Computationally Efficient Modeling of Nonquasi Static Effects in MOSFETs for Millimeter-Wave Applications

Abstract: A lumped-circuit nonquasi-static (NQS) model, that is applicable for both large-signal transient simulations and a small-signal ac analysis, is developed in this paper. An improved physical equivalent circuit, capturing NQS effects in the millimeter waveband, is derived using a transmission line model, by incorporating the high-frequency longitudinal gate electrode and a channel distributed RC network. The proposed model is implemented in a BSIM-BULK MOSFET model and validated with dc and RF data, obtained from technology computer-aided design device simulations and experimental data. The proposed model is in very good agreement with the data up to ${50}{f}_{t}$ . The transient currents, for a gate-voltage switching rate of ${5}\times {10}^{{10}}$ V/s, show excellent match with the data. The dc, transient, and ac simulations using the proposed model are much faster than a 10-segmented MOSFET model. This shows that the proposed model is better than other computationally complex compact models, for most RF applications.

Development and Validation of Spectrophotometric Methods for the Determination of Mesalazine in Pharmaceutical Formulation

Abstract: Two simple, accurate and precise spectrophotometric methods for the quantitative analysis of mesalazine (MSZ) in pharmaceutical formulation have been described. The first method (A) is based on the charge transfer reaction with alizarin red sulphonate (ARS) in the solution of pH 8.0 to form a violet product showing maximum absorbance at 600 nm. The second method (B) is a derivatisation method involving reaction of MSZ with 1,2-naphthoquinone-4- sulphonate (NQS) in alkaline medium at pH 12.0 to form an orange product exhibiting maximum absorbance at 470 nm. All variables affecting the reactions were studied and optimized. Beer's law was obeyed in the concentration ranges of 15-97.5 and 2-22 μg/mL for methods A and B, respectively. The molar absorptivity, Sandell sensitivity, detection and quantification limits were calculated. The two methods were successfully applied to the determination of MSZ in pharmaceutical formulation.

A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line

Abstract: A compact physics-based nonquasi-static (NQS) metal-oxide-semiconductor field-effect transistor (MOSFET) model with the equivalent nonlinear transmission line (TL) representing channel carriers drift-diffusion transport is developed and implemented in the simulation program with integrated circuit emphasis (SPICE) program. An auxiliary subcircuit is described, which efficiently solves the channel surface boundary potentials without the need for employing separate iterative algorithms. The short-channel effects and the quantum effects are efficiently included owning to a surface-potential-based modeling approach. In comparison with other Berkeley short-channel IGFET model 3 (BSIM3)-based NQS MOSFET models, it is shown that the new NQS TL model has the advantages in higher accuracy and substantially fewer number of model parameters. From comparison with a two-dimensional device simulator, it is demonstrated that the new NQS TL model can accurately predict dc, ac, and transient behavior of long- and short-channel n-type MOSFETs in all operational regions and for the input signal frequencies up to 10 f/sub T/ values, using only one set of model parameters.

Constructs of quality in early childhood education and care : A close examination of the NQS assessment and rating instrument

Abstract: The National Quality Standard (NQS) Assessment and Rating Instrument is an important tool for supporting reliability and validity in the assessment and rating process for Australian early childhood education and care services. The Instrument provides a guide for authorised officers and practitioners, by describing each element of the NQS at each of the three most frequently applied quality levels: Working Towards NQS, Meeting NQS and Exceeding NQS. This minor research project involved detailed content analysis of the Instrument, to identify the constructs used to differentiate between the three quality levels and the frequency with which each construct occurred. The analysis found that intentionality, frequency, extent and inclusivity are the four constructs most commonly used for differentiating between NQS quality levels.

Reduced voltage swing digital differential driver

Abstract: A predriver for a differential pair having a reduce voltage swing is disclosed having fast switching speed and low power consumption. The predriver includes a p-type MOS transistor, and a first and second n-type MOS transistor. The source of the p-type MOS couples to the first power supply rail. The gate of the first n-type MOS transistor couples to the gate of the p-type MOS transistor to form an input. The drain of the first n-type MOS transistor couples to the drain of the p-type MOS transistor to form an output. The drain of the second n-type MOS transistor couples to the source of the first n-type MOS transistor. The source of the second n-type MOS transistor couples to ground. The gate of the second n-type MOS transistor couples to the output. The presence of the second n-type MOS transistor alters the voltage swing of the predriver to be from the threshold voltage level to the full power supply voltage, substantially reducing the current or power consumption.