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NQS

About: NQS is a research topic. Over the lifetime, 337 publications have been published within this topic receiving 4226 citations.


Papers
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Proceedings ArticleDOI
05 Dec 1999
TL;DR: A large-signal non-quasi-static (NQS) model for RF CMOS circuit simulation is presented that can be built from channel segments described by conventional QS models like BSIM3 or MOS Model 9.
Abstract: A large-signal non-quasi-static (NQS) model for RF CMOS circuit simulation is presented that can be built from channel segments described by conventional QS models like BSIM3 or MOS Model 9 This large-signal NQS model is shown to give a very accurate prediction of the high-frequency behaviour of the intrinsic transconductance, the power gain and input resistance

71 citations

Journal ArticleDOI
TL;DR: In this paper, four simple and sensitive kinetic spectrophotometric methods (I-IV) have been developed for the determination of trimetazidine dihydrochloride (TRMZ).

69 citations

Journal ArticleDOI
TL;DR: In this paper, Carleo and Troyer introduced a new type sampleable ansatz called neural-network quantum states (NQS) that are inspired by the restricted Boltzmann model used in machine learning.
Abstract: Correlator product states (CPS) are a powerful and very broad class of states for quantum lattice systems whose amplitudes can be sampled exactly and efficiently. They work by gluing together states of overlapping clusters of sites on the lattice, called correlators. Recently Carleo and Troyer Science 355, 602 (2017) introduced a new type sampleable ansatz called neural-network quantum states (NQS) that are inspired by the restricted Boltzmann model used in machine learning. By employing the formalism of tensor networks we show that NQS are a special form of CPS with novel properties. Diagramatically a number of simple observations become transparent. Namely, that NQS are CPS built from extensively sized GHZ-form correlators, which are related to a canonical polyadic decomposition of a tensor, making them uniquely unbiased geometrically. Another immediate implication of the equivalence to CPS is that we are able to formulate exact NQS representations for a wide range of paradigmatic states, including superposition of weighed-graph states, the Laughlin state, toric code states, and the resonating valence bond state. These examples reveal the potential of using higher dimensional hidden units and a second hidden layer in NQS. The major outlook of this study is the elevation of NQS to correlator operators allowing them to enhance conventional well-established variational Monte Carlo approaches for strongly correlated fermions.

69 citations

Journal ArticleDOI
TL;DR: The concept of partitioned-charge-based (PC) modeling of bipolar transistors is developed and demonstrated, and shown to be fundamentally superior to conventional quasi-static charge-control modeling, the basis of the common (capacitance-based) Gummel-Poon equivalent circuit as mentioned in this paper.
Abstract: The concept of partitioned-charge-based (PC) modeling of bipolar transistors is developed and demonstrated, and shown to be fundamentally superior to conventional quasi-static charge-control modeling, the basis of the common (capacitance-based) Gummel-Poon (GP) equivalent circuit. SPICE transient simulations with PC and GP models are contrasted to show a first-order accounting for non-quasi-static (NQS) delay in the PC model which is not accounted for in the GP model. Additional model contrasts in the small-signal domain, compared with exact ac solutions, confirm the superiority of the PC model, the characterization of which is in fact no more tedious than that of the GP model.

68 citations

Journal ArticleDOI
TL;DR: In this paper, a compact model for the intrinsic metal oxide semiconductor (MOS) transistor, which accurately takes into account the non quasistatic (NQS) effects is presented.
Abstract: This paper presents a new and simple compact model for the intrinsic metal oxide semiconductor (MOS) transistor, which accurately takes into account the non quasistatic (NQS) effects. This is done without any additional assumption or simplification than those required in the derivation of the classical description of the MOS channel charge. Moreover, the model is valid from weak to strong inversion and nonsaturation to saturation. The theoretical results are in very good agreement with measured data performed on devices of various channel length, from 300 /spl mu/m down to 0.5 /spl mu/m, and in various modes of operation.

59 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20221
202114
20208
201912
20185
201715