NQS

About: NQS is a research topic. Over the lifetime, 337 publications have been published within this topic receiving 4226 citations.

Impact of non-quasi-static effects on the high frequency small-signal behaviour of MOSFETs

Abstract: In this paper, we investigate the impact of nonquasi-static (NQS) effects on the small-signal RF behaviour of MOSFETs. We observed that the transistor power gain G/sub Tmax/ is largely overestimated in the quasi-static model, whereas it is accurately predicted using a second order NQS model. Furthermore, we investigated the impact of channel width scaling on the transistor y-parameters for the second order NQS model. Accurate modelling results are obtained for MOSFETs with small channel widths. However, experimental results indicate that the effective gate resistance, stemming from the distributed nature of the MOS gate, tends to be lower than R/sub gate/=WR/sub /spl square///(3L) at frequencies close to or larger than f=1/(R(/spl square/)C/sub ox/W/sup 2/). This was observed for transistors with a 25 /spl mu/m channel width.

Non-Stationary Single-Channel Queuing System Features Research in Context of Number of Served Queries

Abstract: This work devoted to researching of mathematical model of non-stationary queuing system (NQS). Arrival rate in studied NQS λ(t) is similar to rate which observed in practice in a real access control system of objects of mass events. Dependence of number of serviced requests from time was calculated. It is proven that the ratio value of served requests at the beginning of event to all served requests described by a deterministic function, depending on the average service rate and the maximum value of the arrival rate function λ(t).

The modeling and measurement of lateral bipolar junction transistors

Abstract: A physically based, large-signal model for the lateral p-n-p transistor is developed and compared with DC and transient measurements. The analytical equations for the lateral and vertical parts of the lateral p-n-p are derived. The analytical geometrical factor for the lateral p-n-p transistor is developed to derive a charge-based large-signal model. The partitioned-charge method is used to account for the non-quasi-static effects since the lateral p-n-p transistor has a wide base width. The simulation shows good agreement with the measurement, indicating that the PC method is sufficient for modeling the lateral p-n-p transistor without resorting to complex equations for NQS (non-quasi-static) effects. This simple model can reduce the simulation time quite a lot and help the circuit designer in estimating the effect of the parasitic lateral p-n-p for complex integrated circuit design. >

Spectrophotometric determination of an antiretroviral drug stavudine in bulk and pharmaceutical formulations

Abstract: Two simple, sensitive and accurate spectrophotometric methods have been developed for the determination of stavudine in pure and dosage forms. Method-A is based on the reaction of stavudine(STD) with 1,2-napthaquinone4-sulphonic acid (NQS) to form N-alkylamono naphthaquinone by replacement of the sulphonate group of the naphthaquinone sulphonic acid by an amino group. The colored chromogen shows absorption maximum at 464 nm and linear within the limits 2.0-12.0 µg/mL. Method-B is based on oxidation of the drug with 1, 10-phenanthroline producing red colored chromogen which is measured at 480nm. Beer’s law is obeyed in the concentration range of 5.0-30.0 µg/mL for the developed method. Different experimental parameters affecting the color development and stability of colored product are carefully studied and optimized. The developed methods could be successfully applied to pharmaceutical formulations. The results obtained are in good agreement with those obtained using official methods.