Topic
NQS
About: NQS is a research topic. Over the lifetime, 337 publications have been published within this topic receiving 4226 citations.
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TL;DR: In this article, a non-quasi-static (NQS) model for tunneling field effect transistors (TFETs) has been developed taking the effects of the carrier charging time into account and good agreements have been obtained between the model results and the numerical simulations.
Abstract: The models for tunneling field-effect-transistors (TFETs) reported up to date mainly used a quasi-static (QS) method to simulate the dc current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The ignoring of the finite charging time of channel carriers makes the QS models problematic for the transient and ac simulations. In this paper, the relaxation time approximation (RTA) is adopted for the first time to develop a non-quasi-static (NQS) model for TFETs taking the effects of the carrier charging time into account and good agreements have been obtained between the model results and the numerical simulations. The proposed NQS model can give accurate prediction of not only the transient current under different signal changing range and rate, but also high-frequency capacitance. Moreover, the new NQS model is deduced based on the existing I-V and C-V model. This makes the new model can be easily incorporated with the existing I-V and C-V model for comprehensive description of TFET-based circuits.
4 citations
TL;DR: In this article, a solid sensing membrane composed of 1,2-naphthoquinone-4-sulfonate (NQS) derivatizing reagent embedded into a polymeric polydimethylsiloxane (PDMS) composite was proposed for in situ ammonium (NH4+) and urea (NH2CONH2) analysis in water and urine samples, respectively.
4 citations
TL;DR: In this article, an improved z-parameter based approach was proposed to extract the gate resistance at low frequencies, which was verified using 430 samples fabricated in 40-, 55-, 90-, and 110-nm CMOS technology nodes.
Abstract: This paper presents an improved z-parameter based approach to extract the gate resistance at low frequencies. The effectiveness of this approach, compared with other y-parameter based approaches, is verified using 430 samples fabricated in 40-, 55-, 90-, and 110-nm CMOS technology nodes. The influence of the nonquasi-static (NQS) effect, resulting from the distributed channel resistance, on the gate resistance extraction is studied, and the optimum processes are suggested to reduce the NQS effect. Finally, the extraction of the channel resistance in the lightly doped drain region is also presented.
4 citations
TL;DR: In this article, a novel extraction strategy combining microemulsion and high voltage electric discharge (HVED) was proposed to extract the NQs from walnut green husks and maximize the value of this agro-byproduct.
4 citations
TL;DR: A simple method for the determination of paracetamol (acetaminophen) with sodium 1,2-naphthoquinone-4-sulphonate (NQS) in alkaline medium using flow injection analysis (FIA) was developed and validated as discussed by the authors.
Abstract: A simple method for the determination of paracetamol (acetaminophen) with sodium 1,2-naphthoquinone-4-sulphonate (NQS) in alkaline medium using flow injection analysis (FIA) was developed and validated. The effect of variables such as flow rate, NQS concentration, reaction coil length, NaOH concentration, and detection wavelength were studied. Linear response was found over the concentration range 3–35 mg L−1 (r2 = 0.9995), the relative standard deviation from replicate injections (n = 9) of 20 mg L−1 of paracetamol was 0.89%. A sampling rate of 82 samples h−1 was obtained. The method was applied for the determination of paracetamol in pharmaceutical tablets, and results have been compared with those obtained by the official method.
4 citations