NQS

About: NQS is a research topic. Over the lifetime, 337 publications have been published within this topic receiving 4226 citations.

Effect of structural and doping parameter variations on nqs delay, intrinsic gain and nf in junctionless fets

Abstract: This paper investigates the effect of process variations on RF metrices, non-quasi static (NQS) delay, intrinsic gain and noise figure (NF) in 30 nm gate length Junctionless FET by performing extensive 3D TCAD simulations. Sensitivity of NQS delay, intrinsic gain and NF on different geometrical parameters and fin doping are studied. The most significant parameters are found to be gate length, fin width and fin doping. The underlap and gate oxide thickness have a least impact over these RF metrics.

Validated spectrophotometric method for the determination, spectroscopic characterization and thermal structural analysis of duloxetine with 1,2-naphthoquinone-4-sulphonate

Abstract: A novel, selective, sensitive and simple spectrophotometric method was developed and validated for the determination of the antidepressant duloxetine hydrochloride in pharmaceutical preparation. The method was based on the reaction of duloxetine hydrochloride with 1,2-naphthoquinone-4-sulphonate (NQS) in alkaline media to yield orange colored product. The formation of this complex was also confirmed by UV-visible, FTIR, 1H NMR, Mass spectra techniques and thermal analysis. This method was validated for various parameters according to ICH guidelines. Beer’s law is obeyed in a range of 5.0–60 μg/mL at the maximum absorption wavelength of 480 nm. The detection limit is 0.99 μg/mL and the recovery rate is in a range of 98.10–99.57%. The proposed methods was validated and applied to the determination of duloxetine hydrochloride in pharmaceutical preparation. The results were statistically analyzed and compared to those of a reference UV spectrophotometric method.

A new non-quasi-static non-linear MOSFET model based on physical analysis

Abstract: This paper presents a novel approach to the physical modelling of Si based sub-micron MOSFETs. The model is based on a set of simplified transport equations for the conducting channel in a MOSFET. These equations incorporate non-quasi-static (NQS) effects due to the inclusion of time derivatives, and describe the semiconductor dynamics in terms of coupled particle and displacement currents leading to a description in terms of a relatively small number of nonlinear differential equations. Thus, internal device behaviour can be accurately modelled. A new method of modelling the charge density in the channel has also been developed in the form of a single expression that describes the charge under the gate for any biasing conditions. The new model has a low empirical content, and is fully continuous over all operating regions.

A new approach to study the channel charge partition of MOS transistors during non-quasi-static (NQS) turn-on

Abstract: A new approach is used to study the channel charge partition of MOS transistors during Non-Quasi-Static (NQS) turn-on. A 2-D device simulator is used to separate the DC and transient NQS source/drain current. The transient channel charge partition ratio can then be deduced from the corresponding terminal currents. While the 40/60 charge partition ratio in saturation region has been widely accepted, it is found to be closer to 0/100 during NQS turn-on. Also the charge partition ratio has a strong dependent on the ramp rate of the input signal.

A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect

Abstract: In analog circuit design an important parameter, from the perspective of superior device performance, is linearity. The DG MOSFET in asymmetric mode operation has been found to present a better linearity. In addition to that it provides, at the discretion of analog circuit designer, an additional degree of freedom, by providing independent bias control for the front and the back gates. Here a non-quasi-static (NQS) small signal model for DGMOSFET with asymmetric gate bias is proposed for extracting the parameters of the device using TCAD simulations. The parameters extracted here for analysis are the intrinsic front and back gate to drain capacitance, Cgd1 and Cgd2, the intrinsic front and back distributed channel resistance, Rgd1 and Rgd2 respectively, the transport delay, τm, and the inductance, Lsd. The parameter extraction model for an asymmetric DG MOSFET is validated with pre-established extracted parameter data, for symmetric DG MOSFET devices, from the available literature. The device simulation is performed with respect to frequency up to 100 GHz.