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Ohmic contact

About: Ohmic contact is a(n) research topic. Over the lifetime, 21175 publication(s) have been published within this topic receiving 294643 citation(s). The topic is also known as: non-rectifying junction & non-rectifying electrical junction.
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Book
01 Jan 1978-
Abstract: A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made with p-n junctions.

4,277 citations


PatentDOI
Abstract: A II-VI compound semiconductor laser diode (10) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding lasers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18) Electrode layer (30) is characterized by a Fermi energy A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 1017 cm-3, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers

1,448 citations


Patent
10 Apr 2008-
Abstract: A method of manufacturing a thin film transistor (“TFT”) substrate includes forming a first conductive pattern group including a gate electrode on a substrate, forming a gate insulating layer on the first conductive pattern group, forming a semiconductor layer and an ohmic contact layer on the gate insulating layer by patterning an amorphous silicon layer and an oxide semiconductor layer, forming a second conductive pattern group including a source electrode and a drain electrode on the ohmic contact layer by patterning a data metal layer, forming a protection layer including a contact hole on the second conductive pattern group, and forming a pixel electrode on the contact hole of the protection layer. The TFT substrate including the ohmic contact layer formed of an oxide semiconductor is further provided.

1,036 citations


Journal ArticleDOI
15 Sep 1956-Physical Review
Abstract: An ohmic contact between a metal and an insulator facilitates the injection of electrons into the insulator. Subsequent flow of the electrons is space-charge limited. In real insulators the trapping of electrons in localized states in the forbidden gap profoundly influences the current flow. The interesting features of the current density-voltage ($J\ensuremath{-}V$) characteristic are confined within a "triangle" in the $logJ\ensuremath{-}logV$ plane bounded by three limiting curves: Ohm's law, Child's law for solids ($J\ensuremath{\propto}{V}^{2}$) and a traps-filled-limit curve which has a voltage threshold and an enormously steep current rise. Simple inequalities relating the true field at the anode to the ohmic field facilitate qualitative discussion of the $J\ensuremath{-}V$ characteristic. Exact solutions have been obtained for an insulator with a single, discrete trap level in a simplified theory which idealizes the ohmic contact and neglects the diffusive contribution to the current. The discrete trap level produces the same type of nonlinearity discovered by Smith and Rose and attributed by them to traps distributed in energy.

1,008 citations


Journal ArticleDOI
Abstract: In characterizing ohmic contacts using the transmission line model, it is necessary to make a measurement referred to as the contact end resistance, as a result of modification to the sheet resistance under the contact. In this article we show that this contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.

876 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202213
2021344
2020550
2019667
2018706
2017698

Top Attributes

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Topic's top 5 most impactful authors

Fan Ren

154 papers, 3.6K citations

Tae Yeon Seong

152 papers, 3.2K citations

Stephen J. Pearton

144 papers, 3.3K citations

Jong-Lam Lee

81 papers, 1.8K citations

Suzanne E. Mohney

59 papers, 1.4K citations