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Optical Carrier transmission rates

About: Optical Carrier transmission rates is a research topic. Over the lifetime, 2463 publications have been published within this topic receiving 33293 citations.


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Patent
23 Feb 2001
TL;DR: In this paper, the authors considered a method and apparatus for electrical-to-optical conversion coupled to an electrical switching fabric, wherein the number of lasers supplying optical carrier beams in electrical-toptical converting is less than the number number of optical modulators.
Abstract: Method and apparatus are contemplated for electrical-to-optical conversion coupled to an electrical switching fabric, wherein the number of lasers supplying optical carrier beams in electrical-to-optical conversion is less than the number of optical modulators. Cost savings for a reduced number of lasers may be considerable. Further, the shared laser bank supplying optical carrier beams may comprise shared control and monitoring electronics, resulting in a further cost savings. The shared laser bank may comprise at least one redundant laser. Optical modulators may be grouped into modules for ease of replacement and further cost savings. Optical signal conditioning may be applied to the lasers, and the conditioned beams may be shared among the modulators. Soliton pulses may be generated at a desired data rate, distributed to form a plurality of distributed pulse trains, and each pulse stream may be modulated with information from the same or different information channels.

35 citations

Journal ArticleDOI
TL;DR: This paper presents a 10-Gb/s clock and data recovery (CDR) and demultiplexer IC in a 0.13-mum CMOS process that uses a new quarter-rate linear phase detector, a new data recovery circuit, and a four-phase 2.5-GHz LC quadrature voltage-controlled oscillator for both wide phase error pulses and low power consumption.
Abstract: This paper presents a 10-Gb/s clock and data recovery (CDR) and demultiplexer IC in a 0.13-mum CMOS process. The CDR uses a new quarter-rate linear phase detector, a new data recovery circuit, and a four-phase 2.5-GHz LC quadrature voltage-controlled oscillator for both wide phase error pulses and low power consumption. The chip consumes 100 mA from a 1.2-V core supply and 205 mA from a 2.5-V I/O supply including 18 preamplifiers and low voltage differential signal (LVDS) drivers. When 9.95328-Gb/s 231-1 pseudorandom binary sequence is used, the measured bit-error rate is better than 10-15 and the jitter tolerance is 0.5UIpp, which exceeds the SONET OC-192 standard. The jitter of the recovered clock is 2.1 psrms at a 155.52MHz monitoring clock pin. Multiple bit rates are supported from 9.4 Gb/s to 11.3 Gb/s

35 citations

Journal ArticleDOI
TL;DR: In this article, a novel approach to demultiplexing in subcarrier optical systems is described, where the technique of optical prefiltering microwave subcarriers from an optical carrier, enabling direct detection of baseband signals, is proposed.
Abstract: A novel approach to demultiplexing in subcarrier optical systems is described The technique of optical prefiltering microwave subcarriers from an optical carrier, enabling direct detection of baseband signals, is proposed The technique is experimentally verified by demultiplexing two 10 Mbit/s channels

35 citations

Proceedings ArticleDOI
11 Mar 2018
TL;DR: PDM-QPSK transmission over 4480 km is demonstrated at a record all-electronically multiplexed symbol rate of 180 GBaud, providing a line rate of 720 Gb/s on a single optical carrier enabled by high-speed InP-DHBT selectors.
Abstract: We demonstrate PDM-QPSK transmission over 4480 km at a record all-electronically multiplexed symbol rate of 180 GBaud, providing a line rate of 720 Gb/s on a single optical carrier enabled by high-speed InP-DHBT selectors.

35 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present the latest improvements in design and fabrication of ridged LiNbO3 optical phase modulators operating in the W-band for millimeter-wave imaging applications at 94 GHz.
Abstract: This paper presents the latest improvements in design and fabrication of ridged LiNbO3 optical phase modulators operating in the W-band for millimeter-wave imaging applications at 94 GHz. It describes the design conditions for effective index matching between optical carrier at 1550 nm and millimeter-wave signal, as well as impedance matching and propagation losses reduction. The impacts of different geometric parameters on the device performance are discussed. In addition, the paper reports the diverse material processing techniques for device fabrication. Characterization of the fabricated devices shows conversion efficiency as high as 1.045 W- 1 at 94 GHz with a 7 V dc half-wave voltage and a 3.7 dB optical insertion loss.

35 citations

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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202322
202237
202168
2020134
2019156
2018141