Showing papers on "Optical microcavity published in 1984"
Patent•
21 Nov 1984
TL;DR: An optical device having controllable absorption for an optical signal having a wavelength corresponding to a photon energy not exceeding 1.2 ev comprises a semiconductor structure including one or more quantum well layers and an electric field such that the component of the field normal to the layer(s) may be controlled so as to determine the absorption edge of the quantum well layer to be on either side of the optical signal wavelength.
Abstract: An optical device having controllable absorption for an optical signal having a wavelength corresponding to a photon energy not exceeding 1.2 ev comprises (i) a semiconductor structure including one or more quantum well layers and (ii) means adapted for applying to the quantum well layers(s) an electric field such that the component of the field normal to the layer(s) may be controlled so as to determine the absorption edge of the quantum well layer(s) to be on either side of the optical signal wavelength. The device may be used as an optical modulator or switch and in optical demultiplexing.
14 citations
TL;DR: In this article, the effects of external optical feedback on the spectral properties of single-mode external cavity semiconductor lasers that use a graded index (GRIN) lens in the optical cavity have been investigated.
Abstract: The effects of external optical feedback on the spectral properties of single-mode external cavity semiconductor lasers that use a graded-index (GRIN) lens in the optical cavity have been investigated. Mode rejection ratio and intensity drop-out rate of the dominant mode as a function of optical strength have been measured. These measurements show that a laser with a short (160 μm) GRIN-lens external cavity can tolerate optical feedback as large as −20 dB without significant penalty. This minimum optical feedback can be larger when lasers with shorter cavity length are used.
11 citations