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Showing papers on "Optical microcavity published in 1993"


Journal ArticleDOI
TL;DR: An electroluminescent diode with a microcavity structure which comprised a reflective Ag anode (36 nm), a hole transport dye layer (250 nm), an emission dye laser (15 nm), and a reflective MgAg cathode was fabricated in this paper.
Abstract: An electroluminescent diode with a microcavity structure which comprised a reflective Ag anode (36 nm), a hole transport dye layer (250 nm), an emission dye laser (15 nm), an electron transport dye layer (240 nm), and a reflective MgAg cathode was fabricated. A diode without the microcavity structure with a transparent ITO anode was also prepared for reference. The diode with microcavity was driven in the electric excitation mode and emission spectra at fixed detection angles were measured together with the angular dependence of emission intensity at fixed wavelengths. A sharpening of emission spectra and a marked alteration of emission patterns in the diode with microcavity were observed.

251 citations


Journal ArticleDOI
TL;DR: In this article, the authors measured the luminance spectra of organic thin films sandwiched with two mirrors in an effort to detect optical microcavity effects and observed narrowing and enhancement of photoluminescent spectra.
Abstract: Luminescent spectra of organic thin films sandwiched with two mirrors were measured in an effort to detect optical microcavity effects. Narrowing and enhancement of photoluminescent spectra were observed from the tri‐(8‐hydroxyquinolinol)aluminum monolayer with the mirrors at both sides. Furthermore, the narrowing of spectra was also observed from electroluminescent devices fabricated with two mirrors.

123 citations


Patent
22 Nov 1993
TL;DR: In this paper, a flat panel display that comprises many pixels, each pixel comprising at least three different microcavity emitters is presented. And the filler layer is a filler layer, of thickness selected to provide to a given microcanavity the desired optical length.
Abstract: Apparatus according to the invention comprises at least two optical microcavity light emitters. Each one of the at least two light emitters comprises spaced apart reflectors that define a microcavity, and further comprises organic material that is capable of electro-luminescence (e.g., tris (8-hydroxyquinolinol) aluminum, commonly referred to as "Alq"), and means for applying an electric field across the organic material. One of the at least two microcavities has effective optical length L 1 , and the other microcavity has effective optical length L 2 ≠L 1 , with the optical lengths selected such that one of the microcavities emits radiation of a first color (e.g., red), and the other microcavity emits radiation of a second color (e.g., green). In many cases there will be present also a third microcavity that emits radiation of a third color (e.g., blue). In preferred embodiments there is present within the microcavities a filler layer, of thickness selected to provide to a given microcavity the desired optical length. A preferred embodiment of the invention is a full color flat panel display that comprises many pixels, each pixel comprising at least three different microcavity emitters. Other contemplated embodiments are a LED printer, an optical interconnect and an optical fiber communication system.

111 citations


Journal ArticleDOI
TL;DR: In this paper, a microlaser excitation threshold of ~50 pJ has been determined experimentally with a molecular Oxazine micro-laser excited by a femtosecond source.
Abstract: High gain and virtual zero threshold have been recognized to be distinctive properties of the microlaser since its original proposal and realization by our laboratory in 1988. These properties are investigated both theoretically and experimentally. They are found to be determined by the synergy of several quantum-statistical processes that take place in the condition of extreme field confinement provided by the peculiar Casimir-type topology of the optical microcavity. The determination of the microcavity mode structure leads to a detailed study of the process of spontaneous emission (SpE), its merging with stimulated emission, and the consequent anomalous onset of the collective atomic behavior at low excitation levels. A microlaser excitation threshold of ~50 pJ has been determined experimentally with a molecular Oxazine microlaser excited by a femtosecond source. The relevance in atomic dynamics of the processes of SpE inhibition—enhancement, mode competition, fluorescence loss, interatomic transverse Bose correlations, and periodic excitation—is investigated both theoretically and experimentally. A discussion of the overall process in terms of a second-order phase transition in a nonequilibrium statistical problem is given. The extension of the microlaser dynamics to other quantum systems, such as the microscopic parametric oscillator, and to Raman and Compton scattering is considered.

47 citations


Book
01 Jan 1993
TL;DR: In this article, an electric field induced localization in superlattices was performed using a quantum well infrared photodetector, and the results were used for the characterization of silicon carbide polytypes for electronic applications.
Abstract: Electric field induced localization in superlattices R Tsu Intersubband transitions and quantum well infrared photodetectors KK Choi Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching RW Collins et al X-ray reflectivity from heteroepitaxial layers P Miceli Spontaneous and stimulated emissions from optical microcavity structures H Yokoyama et al Radiative and nonradiative recombination in AlGaAs and GaAsP heterostructures and some features of the corresponding quantum well laser Zh I Alferov and DZ Garbuzov Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor heterostructures MO Manasreh Optics in lower dimensional quantum confined II-VI heterostructures AV Nurmikko and RL Gunshor Growth and doping of silicon by low temperature molecular beam epitaxy H-J Gossmann and DJ Eaglesham Point defects and charge traps in the Si/SiO^O2 system and related structures EH Poindexter Growth and characterization of silicon carbide polytypes for electronic applications JA Powell et al

40 citations


Journal ArticleDOI
02 May 1993
TL;DR: In this paper, the spontaneous Raman effect in the Casimir topology of an optical microcavity was investigated in the QED-vacuum confinement condition in the prototype inelastic quantum-scattering process at optical frequencies.
Abstract: The spontaneous Raman effect in ${\mathrm{C}}_{6}$${\mathrm{H}}_{6}$ is investigated in the QED-vacuum confinement condition in the Casimir topology of an optical microcavity as a prototype inelastic quantum-scattering process at optical frequencies. The confinement determines a dramatic enhancement (over a factor of ${10}^{3}$), inhibition, and directional effects on the scattering intensity. Apart from its relevance in atomic and molecular spectroscopy, the work establishes a new perspective in the field of QED scattering involving quantum particles with any energy.

39 citations


Journal ArticleDOI
TL;DR: In this paper, the spontaneous emission of quantum well excitons in a monolithic microcavity was studied and when the quantum well was excited by a nonresonant pump wave at high above the bandgap, the incoherent spontaneous emission was concentrated on the single resonant mode and the laser threshold was reduced by many orders of magnitude.
Abstract: We discuss the spontaneous emission of quantum well excitons in a monolithic microcavity. When the quantum well is excited by a nonresonant pump wave at high above the bandgap, the incoherent spontaneous emission is concentrated on the single resonant mode and the laser threshold is reduced by many orders of magnitude. When the quantum well exciton is excited by a resonant pump wave, the coherent spontaneous emission based on a «microcavity exciton-polariton» is observed. The spectral linewidth and the polarization of the pump wave are preserved and the coupling efficiency into the single resonant mode approaches 100%. The microcavity-induced normal mode splitting is observed in the frequency domain by photoexcitation spectrum measurements and in the time domain by pump-probe measurements

21 citations


Patent
01 Nov 1993
TL;DR: In this paper, the optical waveguide layer formed on the diffractive grating has in its compositions longer wavelengths towards the cavity end facets and shorter wavelengths toward the cavity center portion along the cavity to improve the linearity of current versus optical output characteristics.
Abstract: A distributed-feedback laser has a diffractive grating, an optical waveguide layer, and an active region. The optical waveguide layer has equivalent refractive indexes larger towards cavity end facets and smaller towards a device center portion along a cavity. The active region containing the optical waveguide layer has widths wider towards the cavity end facets and narrower towards the device center portion along the cavity. The optical waveguide layer has a uniform electric intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. In another arrangement, the optical waveguide layer formed on the diffractive grating has in its compositions longer wavelengths towards the cavity end facets and shorter wavelengths towards the cavity center portion along the cavity, whereby the optical waveguide layer has a uniform optical intensity distribution along the cavity to improve the linearity of current versus optical output characteristics. The distributed-feedback laser provided is with improved analog modulation distortion characteristics.

18 citations


Journal ArticleDOI
TL;DR: In this paper, a quasi-one-dimensional generalization of the longitudinal-transverse splitting (long-range exchange interaction) is shown to be a consequence of the completeness relation satisfied by the set of optical modes.
Abstract: Exciton-polariton dispersion and long-range exchange energy in quantum wires are obtained by a Green's-function approach. The quasi-one-dimensional generalization of the longitudinal-transverse splitting (long-range exchange interaction) is shown to be a consequence of the completeness relation satisfied by the set of optical modes. Exchange splittings of 0.3 meV are predicted for state-of-the-art GaAs/Al x Ga 1-x As quantum wires, while polariton splittings are expected to be smaller. The effects on long-range exchange splittings of embedding the quantum wire in an optical microcavity are discussed

17 citations


Patent
Yoshida Tomoaki1
13 Apr 1993
TL;DR: A planar semiconductor optical device for modulating an optical beam includes an active layer provided on a substrate as discussed by the authors, the active layer having a quantum structure and being laterally surrounded by an optical confinement region which has a refractive index smaller than the effective as discussed by the authors.
Abstract: A planar semiconductor optical device for modulating an optical beam includes an active layer provided on a substrate, the active layer having a quantum structure and being laterally surrounded by an optical confinement region which has a refractive index smaller than the effective refractive index of the active layer.

16 citations


Journal ArticleDOI
TL;DR: In this paper, the authors achieved a fast response of 20 ps and a gain of 2.5 dB point to an optical switch with a modulation width > 10 GHz, capable of handling 2 THz signals.
Abstract: Optical amplification by stimulated emission is achieved in a vertical microcavity. A fast response of 20 ps and a gain of 2.5 dB point to an optical switch with a modulation width > 10 GHz, capable of handling 2 THz signals.

Journal ArticleDOI
TL;DR: In this paper, a novel monolithic all-optical bistable device operating at 980 nm was reported, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum wells located at the antinodes of the microcavity optical field.
Abstract: We report on a novel monolithic all‐optical bistable device operating at 980 nm, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum wells located at the antinodes of the microcavity optical field. This design maximizes the interaction with the intracavity field and allowed to use only twelve quantum wells of 10 nm thickness. The first observation of all‐optical bistability with strained InGaAs/GaAs quantum wells is reported, with a contrast ratio of 7:1 and a threshold intensity of 1 kW/cm2. The operating wavelength offers key advantages such as the substrate transparency and compatibility with vertical cavity surface emitting lasers.

Journal ArticleDOI
TL;DR: The use of polarization is proposed and demonstrated to determine the threshold of an optical micro-cavity when the output power versus pump power does not show a sharp threshold.
Abstract: We propose and demonstrate the use of polarization to determine the threshold of an optical microcavity when the output power versus pump power does not show a sharp threshold. A lasing threshold is observed via a sharp transition in the polarization and a simultaneous reduction in emission linewidth. We find that dipole angular diffusion in a dye gain medium has a significant effect on the polarization of the emission. A theoretical model including the diffusion process is presented. Quantitative agreement with the measurements is obtained.

Journal ArticleDOI
TL;DR: In this paper, the validity of the methods of calculating the spontaneous emission pattern from an atom in an optical microcavity is examined, and it is shown that the emission pattern is the same for the three methods but that, if the emission rate is larger than the cavity decay rate, deviations in the spontaneous pattern will occur.

Journal ArticleDOI
TL;DR: In this article, the principles and applications of controlled spontaneous emission in semiconductor microcavities are reviewed and the coupling efficiency of spontaneous emission into a lasing mode and the spontaneous emission rate can be modified by various micro-cavity structures.
Abstract: The principles and applications of controlled spontaneous emission in semiconductor microcavities are reviewed. The coupling efficiency of spontaneous emission into a lasing mode and the spontaneous emission rate can be modified by various microcavity structures. By increasing the coupling efficiency, semiconductor lasers with a very low threshold current, and semiconductors lasers and light emitting diodes with a high quantum efficiency, broad modulation bandwidth and low noise are expected.

Journal ArticleDOI
TL;DR: On the basis of rate equations, it is shown that a microcavity laser can exhibit a distinct threshold in a pulsed operation even if the laser cavity has a large spontaneous emission coupling ratio as discussed by the authors.
Abstract: On the basis of rate equations it is shown that a microcavity laser can exhibit a distinct threshold in a pulsed operation even if the laser cavity has a large spontaneous emission coupling ratio.

Journal ArticleDOI
TL;DR: In this article, the authors investigated the behavior of a quantum optical oscillator, consisting of two-level atoms strongly coupled to a cavity mode, in the optical domain, and included explicitly the effects of atomic spontaneous emission and of cavity decay in the interaction of the atoms with the cavity field, using a quantum mechanical master equation approach.
Abstract: In this paper we investigate theoretically the behaviour of a quantum optical oscillator, consisting of two-level atoms strongly coupled to a cavity mode, in the optical domain. In contrast with the usual laser theory, we include explicitly the effects of atomic spontaneous emission and of cavity decay in the interaction of the atoms with the cavity field, using a quantum mechanical master equation approach. It is shown that such an oscillator produces sub-Poissonian light with a large degree of noise reduction even for the case when the atom–field coupling constant is only marginally larger than the spontaneous decay rate.

Journal ArticleDOI
TL;DR: In this paper, the authors have fabricated submicron GaAs crystals by pulverization of bulk material and the selected crystals exhibit modified photoluminescence spectra with blue shifts of up to 10 meV.
Abstract: We have fabricated submicron GaAs crystals by pulverization of bulk material. Size selected crystals exhibit modified photoluminescence spectra with blue shifts of up to 10 meV. The observed behavior is explained by the enhancement and the inhibition of spontaneous emission in a three‐dimensional optical microcavity formed by a semiconductor microcrystal.


Journal ArticleDOI
TL;DR: In this paper, it was shown that the emission characteristics of Fabry-Perot cavities containing dipoles with fixed positions can have a sensitive dependence on the precise location of the dipoles, and that for dipole locations close to a cavity reflector, that is within the first-order coherence length of spontaneous emission, total emission into all cavity modes can be either increased or decreased depending on precise dipole location.
Abstract: Spectral characteristics of emission from Fabry-Perot cavities containing dipoles with fixed positions are calculated. It is shown that the emission characteristics can have a sensitive dependence on the precise location of the dipoles. When the dipoles have a fixed position the usual analysis of the emission in terms of the cavity transmission characteristics becomes invalid. Interference effects which lead to the spectral characteristics are then determined by the details of the interaction between the cavity reflectors and the spontaneous wavepackets emitted from the excited dipoles. Typical measured emission which resembles cavity transmission spectra actually results from averaging over many dipole positions. For dipole locations close to a cavity reflector, that is within the first-order coherence length of the spontaneous emission, total emission into all cavity modes can be either increased or decreased depending on the precise dipole location. An example of the dipole localization effects is given in the experimental emission characteristics from a semiconductor Fabry-Perot cavity. >

Proceedings ArticleDOI
W. Lenth1
13 Apr 1993

Proceedings ArticleDOI
09 Jun 1993
TL;DR: In this article, the authors describe problems and solutions of optical waveguide thick film manufacturing and also connecting techniques with optical fibers, which can be realized using optical fibers or fabricated as a layer structure from different dielectrics and many kinds of glasses.
Abstract: SUMMARY In the last few years a lot of new types light-guiding optical film structures have been developed. Many applications have become published in the field optical and optoelectronical integrated circuits, sensor-elements, etc. The basic component of these systems is the optical waveguide which can be realized with optical fibers or fabricated as a layer structure from different dielectrics and many kinds of glasses [I] [2]. The purpose of this article is to describe some problems and solutions of optical waveguide thick film manufacturing and also connecting techniques with optical fibers.

Proceedings ArticleDOI
15 Nov 1993
TL;DR: In this article, the spontaneous emission factor (C factor) of a three-dimensional microcavity DBR SE laser has been obtained and it has been shown that the variable C factor provides a substantial difference in the L-I characteristic of a micro-avity SE laser.
Abstract: Ultra low-threshold surface emitting (SE) lasers are attractive for large scale integration scheme into two-dimensional laser arrays. The control of spontaneous emission using a microcavity is one of the viable methods to realize such ultra low-threshold lasers. We have obtained the enhanced spontaneous emission factor (C factor) in three-dimensional microcavity DBR SE lasers. Recently, several groups have estimated the C factor of the microcavity SE lasers by fitting the calculated threshold curves of output-input characteristics where they assumed that the C factor was constant. However, the C factor must be changing against driving levels. In this study, we would like to show that the variable C factor provides the substantial difference in the L-I characteristic of a microcavity SE laser. >