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Optical modulator
About: Optical modulator is a research topic. Over the lifetime, 14068 publications have been published within this topic receiving 196932 citations.
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TL;DR: The GaAs-AlGaAs, a loaded-line traveling-wave modulator which has achieved bandwidths up to 36 GHz to date with low power consumption is described in this article.
Abstract: A description is given of a GaAs-AlGaAs, loaded-line traveling-wave modulator which has achieved bandwidths up to 36 GHz to date with low ( >
280 citations
TL;DR: These findings unambiguously imply that apart from its fantastic electric and thermal properties, few-layer bismuthene may also possess attractive optoelectronic properties for nonlinear photonics, such as mode-lockers, Q-switchers, optical modulators and so on.
Abstract: Few-layer bismuthene is an emerging two-dimensional material in the fields of physics, chemistry, and material science. However, its nonlinear optical property and the related photonics device have been seldom studied so far. Here, we demonstrate a sub-200 fs soliton mode-locked erbium-doped fiber laser (EDFL) using a microfiber-based bismuthene saturable absorber for the first time, to the best of our knowledge. The bismuthene nanosheets are synthesized by the sonochemical exfoliation method and transferred onto the taper region of a microfiber by the optical deposition method. Stable soliton pulses centered at 1561 nm with the shortest pulse duration of about 193 fs were obtained. Our findings unambiguously imply that apart from its fantastic electric and thermal properties, few-layer bismuthene may also possess attractive optoelectronic properties for nonlinear photonics, such as mode-lockers, Q-switchers, optical modulators and so on.
278 citations
TL;DR: In this paper, the fabrication and basic characteristics of a InGaAs/InGaAsP multi-quantum-well (MQW) electroabsorption modulator with a novel structure integrated with a distributed-feedback (DFB) laser are presented.
Abstract: The fabrication and basic characteristics of a InGaAs/InGaAsP multi-quantum-well (MQW) electroabsorption modulator with a novel structure integrated with a distributed-feedback (DFB) laser are presented. A fundamental study was performed on the applicability of the InGaAs/InGaAsP MQW structure to an electroabsorption-type modulator. Efficient attenuation small hole pileup and small chirp characteristics of a discrete modulator based on this MQW structure were demonstrated experimentally. A study of the controllability of in-plane band-gap energy by the use of selective-area metal-organic chemical vapor deposition (MOCVD) was also demonstrated. The modulator was monolithically integrated with a MQW DFB laser of the same material. Using a low-capacitance semi-insulating buried heterostructure, over 14 GHz modulation under high-light-output operations up to +10 dBm was achieved. Modulation at 10 Gb/s with a modulation voltage swing of only 1 V/sub pp/ demonstrates the potential value of this system for 1.55- mu m lightwave communications. >
273 citations
TL;DR: In this paper, a micromechanical modulator for fiber-in-the-loop applications with projected optical bandwidths from 1.3 to 1.55 /spl mu/m and data rates of several Mbits/sec.
Abstract: We present a micromechanical modulator for fiber-in-the-loop applications with projected optical bandwidths from 1.3 to 1.55 /spl mu/m and data rates of several Mbits/sec. The device behaves as a damped oscillator. We have made a device with a ringing frequency of 1.1 MHz and a damping time constant of 1 /spl mu/s. We indicate that with an appropriate linear filter the device could operate digitally with data rates of 1 Mbit/sec. >
272 citations