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Optical modulator
About: Optical modulator is a research topic. Over the lifetime, 14068 publications have been published within this topic receiving 196932 citations.
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15 Jul 2005TL;DR: In this article, the authors present a method for driving an interferometric modulator pixel with a driving circuit, wherein the provided potential difference increases over a period of time, and changing the position of a movable reflective layer of the inter-ferometric pixel based on the expected potential difference.
Abstract: The invention comprises devices and methods for driving a MEMs pixel, and in particular, an interferometric modulator pixel. In one embodiment a device for modulating light includes a light modulator including a movable optical element positionable in two or more positions, the modulator operating interferometrically to exhibit a different predetermined optical response in each of the two or more positions, and control circuitry connected to the light modulator for controlling said interferometric modulator, where the control circuitry is controllably switchable between two circuit configurations, and where the control circuitry provides current to said light modulator when switching between the two circuit configurations to cause the movable optical element of the light modulator to move between two positions of its two or more positions. In another embodiment a method of driving an interferometric modulator pixel with a driving circuit includes providing a potential difference across the interferometric pixel, wherein the provided potential difference increases over a period of time, and changing the position of a movable reflective layer of the interferometric pixel based on the provided potential difference.
52 citations
TL;DR: An optical-level shifter and a modulator whose transmission varies linearly with drive current are demonstrated, both based on a new, negative-feedback mode of operation of the recently discovered quantum-well self-electro-optic effect device.
Abstract: We demonstrate an optical-level shifter and a modulator whose transmission varies linearly with drive current, both based on a new, negative-feedback mode of operation of the recently discovered quantum-well self-electro-optic effect device. The system is compatible with both laser diodes and low-power semiconductor electronics and is applicable in both analog and digital optical processing. An extension of the system gives inverted, linear modulation of a coherent beam by an incoherent light source.
52 citations
TL;DR: In this article, the authors demonstrate 10 Gb/s modulation in a 200 μm photonic crystal silicon optical modulator, in both carrier-injection and depletion modes, without pre-emphasis, in a Mach-Zehnder type modulator.
Abstract: We demonstrate 10 Gb/s modulation in a 200 μm photonic crystal silicon optical modulator, in both carrier-injection and depletion modes. In particular, this is the first demonstration of 10 Gb/s modulation in depletion mode and without pre-emphasis, in a Mach-Zehnder type modulator of this length, although moderate pre-emphasis can improve the signal quality. This is made possible by utilizing the slow-light of the photonic crystal waveguide, where the group index ng is ~ 30 and gives ~ 7 times enhancement in the modulation efficiency compared to rib-waveguide devices. We observe 10 Gb/s modulation at drive voltages as low as 1.6 V and 3.6 V peak-to-peak, in injection- and depletion-modes, respectively.
52 citations
TL;DR: In this article, an InGaAsP/InP integrated light source composed of DFB lasers and electroabsorption modulators was studied, and the authors showed that an isolation resistance between the laser and the modulator should be as large as 100 k Omega or more in order to reduce a lasing wavelength shift associated with biasing the modulators.
Abstract: Electrical and optical interactions occurring in InGaAsP/InP integrated light sources composed of DFB lasers and electroabsorption modulators have been studied. Static measurements indicated that an isolation resistance between the laser and the modulator should be as large as 100 k Omega or more in order to reduce a lasing wavelength shift associated with biasing the modulator. The useful guided light out of the modulator was about 1-2 percent of the laser output. At high frequency modulation, asymmetric sidebands were observed in dynamic spectra measured at the modulator facet, which were caused by additional modulation of the laser part. Such additional modulation was relatively large at the relaxation oscillation frequency of the laser, but it was reduced by connecting an RF bypass condenser in parallel to the laser diode and by depositing an antireflection coating at the modulator facet. After eliminating the additional modulation, an integrated device showed a high frequency response of 5.7-GHz 3-dB bandwidth and a small linewidth enhancement factor of alpha =0.8. >
52 citations
TL;DR: In this article, the first demonstration of a novel optical logic device having an inverting characteristic was presented, which displays hard-limiting and optical gain of more than 10 times.
Abstract: We report the first demonstration of a novel optical logic device having an inverting characteristic which displays hard-limiting and optical gain of more than 10.
52 citations