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Optical modulator

About: Optical modulator is a research topic. Over the lifetime, 14068 publications have been published within this topic receiving 196932 citations.


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Journal ArticleDOI
TL;DR: In this article, the authors present a model that correctly accounts for the intensity and rf phase and frequency behavior of the laser-frequency-dependent component of residual amplitude modulation (RAM).
Abstract: An important practical limitation to the sensitivity of frequency-modulation spectroscopy arises because of imperfect phase modulation of the laser beam. This imperfection manifests itself as residual amplitude modulation (RAM), and we present data from a careful series of experiments designed to elucidate its origin. Experimentally, we find two components to the RAM, one that depends for its intensity on the laser frequency and one that does not. We present a model that correctly accounts for the intensity and rf phase and frequency behavior of the laser-frequency-dependent component. We are unable to offer a plausible explanation for the laser-frequency-independent component.

208 citations

Journal ArticleDOI
TL;DR: A highly conductive electron accumulation layer which is induced by an external DC "gate" voltage is introduced and demonstrated for the first time data encoding with an SOH electro-optic modulator.
Abstract: CMOS-compatible optical modulators are key components for future silicon-based photonic transceivers. However, achieving low modulation voltage and high speed operation still remains a challenge. As a possible solution, the silicon-organic hybrid (SOH) platform has been proposed. In the SOH approach the optical signal is guided by a silicon waveguide while the electro-optic effect is provided by an organic cladding with a high χ(2)-nonlinearity. In these modulators the optical nonlinear region needs to be connected to the modulating electrical source. This requires electrodes, which are both optically transparent and electrically highly conductive. To this end we introduce a highly conductive electron accumulation layer which is induced by an external DC “gate” voltage. As opposed to doping, the electron mobility is not impaired by impurity scattering. This way we demonstrate for the first time data encoding with an SOH electro-optic modulator. Using a first-generation device at a data-rate of 42.7 Gbit/s, widely open eye diagrams were recorded. The measured frequency response suggests that significantly larger data rates are feasible.

207 citations

Journal ArticleDOI
TL;DR: In this paper, it was demonstrated that a topological insulator can modulate the operation of a bulk solid-state laser by taking advantage of its saturable absorption, which is potentially attractive as broadband pulsed modulators for the generation of short and ultrashort pulses in bulk solid state lasers, in addition to other promising applications in physics and computing.
Abstract: Topological insulators are states of quantum matter that have narrow topological nontrivial energy gaps and a large third-order nonlinear optical response. The optical absorption of topological insulators can become saturated under strong excitation. In this work, with Bi2Se3 as an example, it was demonstrated that a topological insulator can modulate the operation of a bulk solid-state laser by taking advantage of its saturable absorption. The result suggests that topological insulators are potentially attractive as broadband pulsed modulators for the generation of short and ultrashort pulses in bulk solid-state lasers, in addition to other promising applications in physics and computing.

207 citations

Journal ArticleDOI
TL;DR: Detailed analysis of a four terminal p+pnn+ optical modulator integrated into a silicon-on-insulator (SOI) rib waveguide to approach birefringence free operation is provided.
Abstract: We provide detailed analysis of a four terminal p+pnn+ optical modulator integrated into a silicon-on-insulator (SOI) rib waveguide. The proposed depletion device has been designed to approach birefringence free operation. The modulation mechanism is the carrier depletion effect in a pn junction; carrier losses induced are minimised in our design and because we use a depletion device, the device is insensitive to carrier lifetime. The rise time and fall time of the proposed device have both been calculated to be 7 ps for a reverse bias of only 5 volts. A maximum excess loss of 2 dB is predicted for TE and TM due to the presence of p type and n type carriers in the waveguide.

206 citations

Journal ArticleDOI
TL;DR: In this paper, the authors presented a wireless link system that uses millimeter-wave (MMW) photonic techniques, which consists of an optical 120-GHz MMW generator, an optical modulator, and a high-power photonic MMW emitter.
Abstract: We present a wireless link system that uses millimeter-wave (MMW) photonic techniques. The photonic transmitter in the wireless link consists of an optical 120-GHz MMW generator, an optical modulator, and a high-power photonic MMW emitter. A uni-traveling carrier photodiode (UTC-PD) was used as the photonic emitter in order to eliminate electronic MMW amplifiers. We evaluated the dependence of UTC-PD output power on its transit-time limited bandwidth and its CR-time constant limited bandwidth, and employed a UTC-PD with the highest output power for the photonic emitter. As for the MMW generation, we developed a 120-GHz optical MMW generator that generates a pulse train and one that generates a sinusoidal signal. The UTC-PD output power generated by a narrow pulse train was higher than that generated by sinusoidal signals under the same average optical power condition, which contributes to reducing the photocurrent of the photonic emitter. We have experimentally demonstrated that the photonic transmitter can transmit data at up to 3.0 Gb/s. The wireless link using the photonic transmitter can be applied to optical gigabit Ethernet signals.

206 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202342
2022154
2021166
2020289
2019311
2018325