Topic
Optical modulator
About: Optical modulator is a research topic. Over the lifetime, 14068 publications have been published within this topic receiving 196932 citations.
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TL;DR: In this paper, the Stark effect was observed in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations, and the effect can be seen over the C-band around 1.55mum wavelength in structures heated to 90degC.
Abstract: We present observations of quantum confinement and quantum-confined Stark effect (QCSE) electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates, in good agreement with theoretical calculations. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also demonstrate that the effect can be seen over the C-band around 1.55-mum wavelength in structures heated to 90degC, similar to the operating temperature of silicon electronic chips. The physics of the effects are discussed, including the effects of strain, electron and hole confinement, and exciton binding, and the reasons why the effects should be observable at all in such an indirect gap material. This effect is very promising for practical high-speed, low-power optical modulators fabricated compatible with mainstream silicon electronic integrated circuits
156 citations
Patent•
19 Aug 1996TL;DR: In this paper, a micromechanical optical modulator having a linear response in reflectivity, as a function of applied bias, and a method of operating and making same, is disclosed.
Abstract: A micromechanical optical modulator having a linear response in reflectivity, as a function of applied bias, and a method of operating and making same, are disclosed. The modulator consists of a movable layer suspended over a substrate. A gap is defined between the movable layer and the substrate. As the movable layer moves, the gap changes size, resulting in a change in modulator reflectivity. In operation, the movable layer moves within a linear operating regime under the action of an applied voltage, which is the sum of a constant bias and a signal from an analog source. A substantially linear operating characteristic, i.e., reflectivity versus applied voltage is obtained within the linear operating regime by properly selecting the size of the gap in the absence of the applied voltage and the range in the applied voltage.
156 citations
TL;DR: A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode that allows a good overlap between the optical mode and carrier density variations.
Abstract: A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz.
154 citations
TL;DR: Xiao et al. as mentioned in this paper investigated the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors and examined control of these excitons by optical, electrical, as well as mechanical means.
Abstract: Author(s): Xiao, J; Zhao, M; Wang, Y; Zhang, X | Abstract: The research on emerging layered two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), reveals unique optical properties generating significant interest. Experimentally, these materials were observed to host extremely strong light-matter interactions as a result of the enhanced excitonic effect in two dimensions. Thus, understanding and manipulating the excitons are crucial to unlocking the potential of 2D materials for future photonic and optoelectronic devices. In this review, we unravel the physical origin of the strong excitonic effect and unique optical selection rules in 2D semiconductors. In addition, control of these excitons by optical, electrical, as well as mechanical means is examined. Finally, the resultant devices such as excitonic light emitting diodes, lasers, optical modulators, and coupling in an optical cavity are overviewed, demonstrating how excitons can shape future 2D optoelectronics.
154 citations
Patent•
17 Nov 1997
TL;DR: In this paper, a confocal spectral imaging system consisting of a light source, a light modulator and a detector is presented, where the illumination pattern is directed to time-dependent changing conjugate locations of the object.
Abstract: A confocal spectral imaging system comprises a light source, a light modulator forming an illumination aperture and directing an illumination pattern to conjugate object locations, and analyzing means with a detection aperture, dispersive elements and a detector, wherein the illumination and detection apertures are in conjugate optical planes, and the light modulator consist of an array of light modulator elements, a group of which being arranged according to the illumination pattern and forming the illumination aperture, and are controlled such that the illumination pattern is directed to time-dependent changing conjugate locations of the object A programmable light source comprises a white light source, dispersion means and a spatial light modulator with an array of individually time-dependent controllable modulator elements being illuminated with the dispersed light and providing a position selective transmittivity or reflectivity, so that a light with a predetermined wavelength distribution passes the light modulator
154 citations