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Optical switch

About: Optical switch is a research topic. Over the lifetime, 28538 publications have been published within this topic receiving 351176 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, structural, electrical, and optical properties of polycrystalline films of VO2, V2O5, and mixtures of these two oxides are presented.
Abstract: Structural, electrical, and optical properties of the polycrystalline films of VO2, V2O5, and mixtures of these two oxides are presented. Resistivity change by a factor larger than 103 accompanying the semiconductor-metal phase transition in the VO2 films is reported. A significant contrast in optical transmittance for the two phases of VO2 is observed. High temperature resistivity and optical transmittance of the V2O5 films are shown. Values of the temperature coefficient of resistance in some of the VO2 films in their semiconducting phase and in some of the V2O5 films are as high as 5.2 and 4% per degree Celsius, respectively. Phase switching properties of the VO2-V2O5 films are described. Applications of the fabricated films include optical switches and bobmetric-type light detectors.

249 citations

Journal ArticleDOI
TL;DR: In this paper, a singlemode fiber connectorized microelectromechanical systems (MEMS) reflective optical switch attenuator operating in the 1550-nm wavelength region is described.
Abstract: A single-mode fiber connectorized microelectromechanical systems (MEMS) reflective optical switch attenuator operating in the 1550-nm wavelength region is described The device consists of an electrostatically actuated gold-coated silicon vane interposed in a fiber gap yielding 081-dB minimum insertion loss in the transmit state and high transmission isolation in the reflection state with 215-dB minimum return loss The switch attenuators also work as continuously variable optical attenuators capable of greater than 50-dB dynamic range and can be accurately regulated with a simple feedback control circuit Switching voltages were in the range of 5-40 V and a switching time of 64 /spl mu/s was achieved The MEMS switch can be used in optical subsystems within a wavelength-division-multiplexed (WDM) optical network such as optical power regulators, crossconnects, and add/drop multiplexers We used a discrete array of 16 switch attenuators to implement a reconfigurable 16-channel 100-GHz spacing WDM drop module of an add/drop multiplexer Thru-channel extinction was greater than 40 dB and average insertion loss was 21 dB Both drop-and-transmit of multiple channels (11-18-dB contrast, 14-19-dB insertion loss) and drop-and-detect of single channels (>20-dB adjacent channel rejection, 10-14-dB insertion loss) were demonstrated

248 citations

Journal ArticleDOI
TL;DR: In this article, the pump and probe signals are tuned to different resonance wavelengths of the microring and the probe beam is switched in and out of resonance in a pump-and-probe configuration.
Abstract: In this paper, we demonstrate all-optical nonlinear switching in compact GaAs-AlGaAs microring resonators at the 1.55-/spl mu/m wavelength. Switching is accomplished in the pump-and-probe configuration in which the pump-and-probe signals are tuned to different resonance wavelengths of the microring. Refractive index change in the microring due to free carriers generated by two photon absorption is used to switch the probe beam in and out of resonance. Measured transient responses of the pump and probe through the microring show good agreement with theoretical predictions based on nonlinear pump-probe interaction due to two photon absorption.

247 citations

Journal ArticleDOI
TL;DR: All-optical switching in individual CdS nanowire cavities with subwavelength dimensions through stimulated polariton scattering is demonstrated, leading to footprints that are a fraction of those of comparable silicon-based dielectric contrast and photonic crystal devices.
Abstract: An all-optical logic gate using stimulated polariton scattering is made by combining two semiconductor nanowire optical switches.

243 citations

Patent
10 Oct 2002
TL;DR: In this paper, a fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements, which includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
Abstract: An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.

240 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202395
2022282
2021383
2020557
2019624
2018665