Optical switch

About: Optical switch is a research topic. Over the lifetime, 28538 publications have been published within this topic receiving 351176 citations.

Wavelength-size hybrid Si-VO(2) waveguide electroabsorption optical switches and photodetectors.

Abstract: Ultra-compact waveguide electroabsorption optical switches and photodetectors with micron- and sub-micron lengths and compatible with silicon (Si) waveguides are demonstrated using the insulator-metal phase transition of vanadium dioxide (VO(2)). A 1 μm long hybrid Si-VO(2) device is shown to achieve a high extinction ratio of 12 dB and a competitive insertion loss of 5 dB over a broad bandwidth of 100 nm near λ = 1550 nm. The device, operated as a photodetector, can measure optical powers less than 1 μW with a responsivity in excess of 10 A/W. With volumes that are about 100 to 1000 times smaller than today's active Si photonic components, the hybrid Si-VO(2) devices show the feasibility of integrating transition metal oxides on Si photonic platforms for nanoscale electro-optic elements.

Active optical circuit sheet or active optical circuit board, active optical connector and optical MCM, process for fabricating optical waveguide, and devices obtained thereby

Abstract: An active optical circuit sheet or active optical circuit board wherein an electro optical switch or optical modulator is driven with a voltage (SIGin) from an electronic device, the electrical signal (SIGin) is converted to an optical signal, transmitted and then converted to an electrical signal (SIGout) at an optical receiver element, and an electrical connection is formed between an optical wiring board and the electronic device for transmission of signals to another or the same electronic device, separating the electrical wiring at the electronic device end and the optical wiring at the optical wiring board end, or alternatively, SIGin and SIGout electrode pads are provided on the side of the optical wiring board on which the optical device is mounted or on the opposite side, for connection with the electronic device

Synthesis of CdZnO thin film as a potential candidate for optical switches

Abstract: Cadmium doped zinc oxide thin films have been prepared using a thermal decomposition technique. The influence of Cd as a doping agent on the structure, optical and nonlinear optical properties was carefully investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and a UV–vis spectrophotometer. A deep correlation has been found between the surface roughness and the optical properties. The roughness is found to deteriorate the nonlinear response, such that the highest nonlinear susceptibility χ (3) is obtained for the smoothest layer. The third-order nonlinear susceptibility χ (3) has been calculated using the Frumer model, and is estimated to be 3.37×10 −10 esu. The dispersion of the refractive index of the prepared thin film is shown to follow the single electronic oscillator model. From the model, the values of oscillator strength ( E d ), oscillator energy ( E o ) and dielectric constant ( e ∞ ) have been determined. The conductivity has been measured as a function of the energy of the photons, revealing marginal change at energies below 3.15 eV, while above this value there is a large increase in the conductivity. This suggests that CdZnO is a potential candidate for applications in optical devices such as optical limiter and optical switching.

Optical MEMS devices based on moving waveguides

Abstract: The paper deals with optical microelectromechanical systems (MEMS), and in particular with optical MEMS based on moving waveguides. After a short overview of this very attractive novel activity, specific technological problems and solutions are discussed. Then the following examples of recent developments based on silica on silicon technology are presented: optical switch, vibration sensor, and optical scanner.