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Showing papers on "Organic semiconductor published in 1978"


Patent
03 Jul 1978
TL;DR: A photovoltaic cell wherein the photoactive layer comprises a thin layer of metal-free phthalocyanine dispersed in a binder was proposed in this article. But it was not shown to achieve the electrical performance of prior state-of-the-art organic semiconductor PV cells of the same surface area.
Abstract: A photovoltaic cell wherein the photoactive layer comprises a thin layer of metal-free phthalocyanine dispersed in a binder. The electrical output is greatly in excess of that obtained from prior art organic semiconductor photovoltaic cells of the same surface area.

28 citations


Journal ArticleDOI
TL;DR: In this paper, the effect of gas exposure on surface composition of cobalt phthalocyanine (CoPc) was measured using Auger spectroscopy, showing that the initial sticking probability of oxygen on CoPc is about 1 × 10 -4 but for oxygen pressures greater than 10 -5 Pa, the migration of the oxygen into the bulk limits the rate of oxygen uptake to 1 ×10 11 molecules/cm 2 s.

13 citations


Journal ArticleDOI
TL;DR: In this article, the electrical conductivity of cupferron and some divalent transition metal complexes has been studied in the temperature range 0-150°C, in the amorphous state.

11 citations


Patent
24 Apr 1978
TL;DR: In this article, an organic semiconductor layer consisting of two-layer laminate construction having P-N junction was used to make a photo-sensitive body to be highly sensitive by providing an organic polysilicon layer, such that its manufacture is simplified, its crystal precipitation is never produced, and no matter how much an electron receiving material may be doped, it is all right becuase the method is dipping.
Abstract: PURPOSE:To make a photo-sensitive body to be highly sensitive by providing an organic semiconductor layer consisting of two-layer laminate construction having P-N junction such that its manufacture is simplified, its crystal precipitation is never produced, and no matter how much an electron receiving material may be doped, it is all right becuase the method is dipping.

3 citations