Showing papers on "Organic semiconductor published in 1982"
TL;DR: In this article, a theory of the tetramethyltetraselenafulvalene (TMTSF) salts and their sulfur analogs is developed, which accounts for differences between the sulfur and selenium series, and the absence of Peierls' transitions.
Abstract: A theory of the tetramethyltetraselenafulvalene (TMTSF) salts and their sulfur analogs is developed. It is shown that the phase diagram is controlled by electron-electron umklapp scattering. The theory accounts for differences between the sulfur and selenium series, and the absence of Peierls' transitions. Predictions of the pressure dependence of the spin-density-wave critical temperature and correlations of the dimerization of the organic stacks with critical pressures and temperatures are verified experimentally.
210 citations
TL;DR: In this paper, a wide range of semiconducting organometallic compounds such as copper tetracyanoquinodimethane (CuTCNQ) have been observed to switch between two stable states when exposed to optical radiation.
Abstract: Semiconducting organometallic films such as copper tetracyanoquinodimethane (CuTCNQ) have been observed to switch between two stable states when exposed to optical radiation. Observations of switching between two states in these films have been made by Raman spectroscopic methods and direct observation of electrical resistance changes. Line or pattern generation is observed for exposure above certain threshold levels. These effects are observed in a wide range of Cu and Ag organometallic compounds.
166 citations
TL;DR: In this paper, the electrical properties of novel rectifying junctions employing unirradiated PTCDA vapor deposited onto 10−Ω cm p-Si substrates were described.
Abstract: The organic compound 3,4,9,10‐perylenetetracarboxylic dianhydride (PTCDA) has previously been observed to undergo a large increase in conductivity on irradiation with energetic particle beams. In this letter, we describe the electrical characteristics of novel rectifying junctions employing unirradiated PTCDA vapor deposited onto 10‐Ω cm p‐Si substrates. The PTCDA‐Si contact barrier has a height of φB = 0.74 eV. The resulting diodes undergo avalanche breakdown at VB = 230 V, and exhibit current densities at 1/2 VB of ⩽50 μA/cm2. In addition, the forward current‐voltage (IF−V) characteristics are strongly dependent on the contact metal used on the top PTCDA surface. The best results obtained were for diodes employing Ti contacts which gave nonhysteretic, stable IF‐V characteristics with an ideality factor of n = 1.7. Several properties of the as‐deposited PTCDA are also discussed. The rectifying characteristics reported here, coupled with the properties of irradiated PTCDA, suggest many unique device app...
98 citations
TL;DR: In this article, three kinds of layered semiconductor-insulator-semiconductor (SIS) structures were examined: indium tin oxide (ITO), ZnO/X-H 2 Pc/Au and CdS/XH 2Pc/AU structures.
13 citations
TL;DR: In this article, Raman spectra for single crystals of the organic salt KTCNQ (potassium tetracyanoquinodimethane) and its deuterated analogue were reported.
Abstract: Raman spectra are reported for single crystals of the organic salt KTCNQ (potassium tetracyanoquinodimethane) and its deuterated analogue. Intensities of intramolecular and intermolecular (phonons) vibrations exhibit strong variations at the phase transition temperature associated with a dimmer–monomer transition. A simple model is presented to interpret and correlate these results with previously observed ir intensity anomalies in this and other organic semiconductors.
7 citations
TL;DR: In this article, the electrical modulated electron beam method was used for the measurement of surface photovoltages and demonstrates its ability to monitor sub-monolayer concentrations of electron acceptors such as oxygen and o-chloranil on films of phthalocyanines.
6 citations
TL;DR: In this article, an n-type SnO 2 made light-sensitive by dye Victoria Blue B on the photoanode and meso-tetraphenylporphyrin (TPP) on the photocathode was reported.
6 citations
Patent•
20 Dec 1982
TL;DR: In this paper, a desired molded body is treated in the range of 300-700 deg.C by quickly increasing the temperature to 300 deg.c/hr in a reducing atmosphere at first, therafter increasing temperature very slowly so as not to yield thermal decomposition gas.
Abstract: PURPOSE:To obtain the organic type semiconductor having the resistivity of 2X 10 -2X10 OMEGAcm, by adding a material which donates or accepts electrons to a heat treated material of a macromolecular polymer which includes C of 80- 95wt% and has the resistivity of 10 -10 OMEGAcm. CONSTITUTION:Phenol resin is selected in consideration of heat resistance, oxidation resistance, retension of configuration and reduction in weight at the time of heat treatment, and the like. A desired molded body is treated in the range of 300-700 deg.C by quickly increasing the temperature to 300 deg.C at the rate of 100 deg.C/ hr in a reducing atmosphere at first, therafter increasing the temperature very slowly so as not to yield thermal decomposition gas. Thus the resistivity can be readily controlled. Then the semiconductive material which includes C of 80- 95wt% and has the resistivity of 10 -10 OMEGAcm is formed. Then it is immersed in aqueous solution of alkali metal (Li, Na, and K) or exposed to halogen (Cl, Br, and I) or in vapor of PF6 or P3As5. Impurities are added and the decreasing rate of the resistivity is made to be 5 or more. Then the organic semiconductor of about 2X10 -2X10 OMEGAcm is obtained. In this constitution, the decreasing rate can be freely controlled, the organic semiconductor having the desired resistivity is obtained, and mechanical strength is high.
5 citations
Patent•
06 Jul 1982
TL;DR: In this paper, a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type is described, where the dopant is a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum.
Abstract: The invention relates to a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type. It serves to make the doping more homogeneous and improves the stability over a period of time. The process consists of using as the dopant a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum belonging to the transition metals, or a salt of an element such as europium or ytterbium belonging to the lanthanides. Doping takes place by immersing the film in a solution having a low dopant concentration, e.g. in toluene, and maintaining the system at low pressure and ordinary temperature for a period of a few days, as a function of the desired doping level and conductivity.
5 citations
TL;DR: In this paper, the optical and electrical properties of bromine-doped polyacetylene were investigated and the formation of charge transfer complexes was quantitatively correlated to the production of charge carriers and to the conductivity σ.
5 citations
TL;DR: In this paper, the authors proposed the "conducting box" polarization model, which explains the value and frequency dependence of the giant dielectric constant of the one-dimensional organic semiconductor Me φ3 As(TCNQ)2.
Patent•
14 Jan 1982
TL;DR: In this paper, a mixture of TCNQ and a phthalocyanine compound with the molar ratio of 0.5 or below is dissolved in concentrated sulfuric acid and then deposited in water as a complex.
Abstract: PURPOSE:To obtain thermally stable and inexpensive organic semiconductor material applicable to a thermistor or the like, by complexing TCNQ or its metallic salt with a compound, having a porphyrin nucleus, e.g., phthalocyanine. CONSTITUTION:Phthalocyanine or its metallic chelate compound (where the metal is at least one selected from Cu, Cr, Fe, Co, Ni, Pt, Pd and Zn) is, for example, pulverized, and suspended in a solution of TCNQ (7,7,8,8-tetracyanoquinodimethane) or its Na salt, to complex the powder particle surface. Or, a mixture of TCNQ and a phthalocyanine compound with the molar ratio of 0.5 or below is dissolved in concentrated sulfuric acid and then deposited in water as a complex. The complex thus prepared is crystallized to lower its resistance, thereby providing thermally stable semiconductor material.
01 Jun 1982
TL;DR: In this article, the authors pointed out the inhomogeneity of the dopant through the film cross section, in particular with I2 and SbF5, and showed that errors may be induced by these inhomogeneities in the interpretation of physical measurements.
Abstract: 2014 By doping, the electrical behaviour of polyacetylene film was considerably modified leading to the large development of the research in the field of conducting polymers. The aim of this paper is to point out the inhomogeneity of the dopant through the film cross section, in particular with I2 and SbF5. It is also evidenced that errors may be induced by these inhomogeneities in the interpretation of physical measurements. Revue Phys. Appl.17 (1982) 373-375 JUIN 1982, PAGE Classification Physics Abstracts 82.35
01 Jan 1982
TL;DR: In this article, a strong interest is devoted to the organic semiconductors, specially to doped polyacetylene films with an insulating, semiconducting and even metallic behavior.
Abstract: Since few years a strong interest is devoted to the organic semiconductors, specially to doped polyacetylene films with an insulating, semiconducting and even metallic behavior. Its optical and transport properties, its low cost and easeness to polymerise very large surfaces, leads to study its potential application in the field of future photovoltaic solar cells.
TL;DR: In this article, the photoconductivity of tetrathia-and tetraselena-fulvalenes has been compared with that of squaric acid-based organic dyes, in order to assess their potential for use in photovoltaic systems.
Abstract: The photoconductivity of tetrathia- and tetraselena-fulvalenes has been compared with that of squaric acid-based organic dyes, in order to assess their potential for use in photovoltaic systems. Photoconduction action spectra have been measured for single crystals of each compound and compared with photoacoustic spectra. The magnitudes of the dark resistivities and of the photocurrents of these compounds have been compared. The electron-donor compounds are promising candidates for use in photovoltaic systems, so their behavior as thin films was studied. These compounds form potential barriers when sublimed to form films on metal surfaces, although preliminary results indicate that they may not form simple Schottky barriers.