Organic semiconductor

About: Organic semiconductor is a research topic. Over the lifetime, 15905 publications have been published within this topic receiving 533881 citations.

Singlet Exciton Fission in Nanostructured Organic Solar Cells

Abstract: Singlet exciton fission is an efficient multiexciton generation process in organic molecules. But two concerns must be satisfied before it can be exploited in low-cost solution-processed organic solar cells. Fission must be combined with longer wavelength absorption in a structure that can potentially surpass the single junction limit, and its efficiency must be demonstrated in nanoscale domains within blended devices. Here, we report organic solar cells comprised of tetracene, copper phthalocyanine, and the buckyball C(60). Short wavelength light generates singlet excitons in tetracene. These are subsequently split into two triplet excitons and transported through the phthalocyanine. In addition, the phthalocyanine absorbs photons below the singlet exciton energy of tetracene. To test tetracene in nanostructured blends, we fabricate coevaporated bulk heterojunctions and multilayer heterojunctions of tetracene and C(60). We measure a singlet fission efficiency of (71 ± 18)%, demonstrating that exciton fission can efficiently compete with exciton dissociation on the nanoscale.

High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences

Abstract: We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C−H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm2/V·s and 3 having μh and μe of 0.08 and 0.09 cm2/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.

Quasi-epitaxial growth of organic multiple quantum well structures by organic molecular beam deposition

Abstract: Multiple quantum well structures consisting of alternating layers of two crystalline organic semiconductors, namely, 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) and 3,4,7,8 naphthalenetetracarboxylic dianhydride (NTCDA), have been grown by organic molecular beam deposition. The individual layer thicknesses in the multilayer samples were varied from 10 to 200 A. X‐ray diffraction and birefringence data show that there is a strong structural ordering in all layers, as well as across large spatial distances along the sample surface. Thus, the growth is ‘‘quasi‐epitaxial’’ even though the PTCDA and NTCDA crystal structures are incommensurate. From the optical absorption spectra, it was found that the lowest energy PTCDA singlet exciton line shifts to higher energy with decreasing layer thickness. Comparison of these results with a quantum mechanical model based on exciton confinement in the PTCDA layers is proposed to describe the energy shift.

p-Channel organic semiconductors based on hybrid acene-thiophene molecules for thin-film transistor applications.

Abstract: We report the structural and electrical characterization of two new p-channel organic semiconductors, 5,5‘-bis(2-tetracenyl)-2,2‘-bithiophene (1) and 5,5‘-bis(2-anthracenyl)-2,2‘-bithiophene (2). Both compounds exhibited a high degree of thermal stability with decomposition temperatures of 530 °C and 425 °C for 1 and 2, respectively. The thin-film structures of 1 and 2 were examined using wide-angle X-ray diffraction (XRD), grazing incidence X-ray diffraction (GIXD), and atomic force microscopy (AFM). Films of 1 and 2 pack in similar triclinic unit cells with the long axes of the molecules nearly perpendicular to the substrate. Thin-film transistors (TFTs) based on 1 and 2 exhibit contact-corrected linear regime hole mobility as high as 0.5 cm2/Vs and 0.1 cm2/Vs, respectively. The specific contact resistance at high gate voltages for gold top contacts was 2 × 104 Ω cm and 3 × 104 Ω cm for 35 nm thick films of 1 and 2, respectively. Long-term air stability tests revealed less degradation of the electrical ...

Energy level alignment at metal/organic semiconductor interfaces: “Pillow” effect, induced density of interface states, and charge neutrality level

Abstract: A unified model, embodying the "pillow" effect and the induced density of interface states (IDIS) model, is presented for describing the level alignment at a metal/organic interface. The pillow effect, which originates from the orthogonalization of the metal and organic wave functions, is calculated using a many-body linear combination of atomic orbitals Hamiltonian, whereby electron long-range interactions are obtained using an expansion in the metal/organic wave function overlap, while the electronic charge of both materials remains unchanged. This approach yields the pillow dipole and represents the first effect induced by the metal/organic interaction, resulting in a reduction of the metal work function. In a second step, we consider how charge is transferred between the metal and the organic material by means of the IDIS model: Charge transfer is determined by the relative position of the metal work function (corrected by the pillow effect) and the organic charge neutrality level, as well as by an interface parameter S, which measures how this potential difference is screened. In our approach, we show that the combined IDIS-pillow effects can be described in terms of the original IDIS alignment corrected by a screened pillow dipole. For the organic materials considered in this paper, we see that the IDIS dipole already represents most of the realignment induced at the metal/organic interface. We therefore conclude that the pillow effect yields minor corrections to the IDIS model.